Compliant micro device transfer head array with metal electrodes
    94.
    发明授权
    Compliant micro device transfer head array with metal electrodes 有权
    具有金属电极的符合微器件传输头阵列

    公开(公告)号:US09236815B2

    公开(公告)日:2016-01-12

    申请号:US13710442

    申请日:2012-12-10

    CPC classification number: H02N13/00 B81C99/002 Y10T279/23

    Abstract: Compliant monopolar and bipolar micro device transfer head arrays and methods of formation from SOI substrates are described. In an embodiment, an array of compliant transfer heads are formed over a base substrate and deflectable toward the base substrate, and a patterned metal layer includes a metal interconnect layer electrically connected with an array of the metal electrodes in the array of compliant transfer heads.

    Abstract translation: 描述了合适的单极和双极微器件转移头阵列和从SOI衬底形成的方法。 在一个实施例中,柔性传送头阵列形成在基底基板上并且可朝向基底基板偏转,并且图案化金属层包括金属互连层,金属互连层与柔性传送头阵列中的金属电极阵列电连接。

    MICRO DEVICE TRANSFER HEAD ARRAY
    100.
    发明申请
    MICRO DEVICE TRANSFER HEAD ARRAY 有权
    微型设备传输头阵列

    公开(公告)号:US20150216042A1

    公开(公告)日:2015-07-30

    申请号:US14681707

    申请日:2015-04-08

    Abstract: A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了从SOI衬底形成微器件传输阵列的微器件转移头阵列和方法。 在一个实施例中,微器件传送头阵列包括基底衬底和基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括突出在硅互连上方的台面结构。 介电层覆盖每个台面结构的顶面。

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