公开(公告)号：US09520332B2

公开(公告)日：2016-12-13

申请号：US14736042

申请日：2015-06-10

申请人： RAYTHEON COMPANY

发明人： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC分类号： H01L23/48 ,  H01L23/20 ,  H01L21/00 ,  H01L21/30 ,  H01L23/10 ,  H01L23/498 ,  H01L21/768 ,  B81B7/00 ,  H01L23/26 ,  B81C1/00 ,  H01L21/52 ,  H01L27/146

CPC分类号： H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US20160343630A1

公开(公告)日：2016-11-24

申请号：US15108062

申请日：2014-12-18

申请人： Toyota Jidosha Kabushiki Kaisha

发明人： Takuya KADOGUCHI ,  Takahiro HIRANO ,  Masayoshi NISHIHATA ,  Keita FUKUTANI ,  Tomomi OKUMURA

IPC分类号： H01L23/26 ,  H01L21/56 ,  H01L21/48 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/26 ,  H01L21/4825 ,  H01L21/4882 ,  H01L21/565 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/564 ,  H01L2924/18301

摘要： A semiconductor device includes a metal member, a semiconductor element, a resin part, a primer layer, and a peel-off restraining part. The metal member has a surface that includes a semiconductor element mounting region and a resin close contact region that extends from the semiconductor element mounting region to an outer peripheral edge of the metal member. The semiconductor element is mounted on the semiconductor element mounting region. The resin part extends to a position outside a side surface of the metal member, and closely contacts with the resin close contact region, and collectively covers the semiconductor element and the metal member. The primer layer is disposed between the resin close contact region and the resin part. The peel-off restraining part is configured to restrain the metal member and the resin part from peeling from each other in the outer peripheral part of the resin close contact region.

摘要翻译： 半导体器件包括金属部件，半导体元件，树脂部件，底漆层和剥离抑制部件。 金属构件具有包括从半导体元件安装区域延伸到金属构件的外周边缘的半导体元件安装区域和树脂紧密接触区域的表面。 半导体元件安装在半导体元件安装区域上。 树脂部分延伸到金属构件的侧表面外的位置，并且与树脂紧密接触区域紧密接触，并且共同地覆盖半导体元件和金属构件。 底漆层设置在树脂紧密接触区域和树脂部分之间。 剥离抑制部被构造成在树脂紧密接触区域的外周部分中抑制金属构件和树脂部件彼此剥离。

公开(公告)号：US09497875B2

公开(公告)日：2016-11-15

申请号：US14116411

申请日：2012-05-08

申请人： Juergen Henniger ,  Matthias Wieczorek ,  Thomas Urbanek ,  Marion Gebhardt ,  Bernhard Schuch ,  Andreas Reif ,  Stefan Gottschling

发明人： Juergen Henniger ,  Matthias Wieczorek ,  Thomas Urbanek ,  Marion Gebhardt ,  Bernhard Schuch ,  Andreas Reif ,  Stefan Gottschling

IPC分类号： H01L21/00 ,  H05K5/06 ,  H01L23/055 ,  H01L23/10 ,  H01L23/26 ,  H05K3/30

CPC分类号： H05K5/069 ,  H01L23/055 ,  H01L23/10 ,  H01L23/26 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/49175 ,  H01L2924/16152 ,  H05K3/306 ,  Y10T29/49139 ,  H01L2924/00014

摘要： A control device for a motor vehicle includes a housing having a housing cover and a housing base, a sealing device between the housing cover and the housing base, at least one circuit carrier having electrically conductive tracks, and at least one electronic component disposed on the circuit carrier. The control device further includes at least one conductor structure extending out of the interior of the housing, and at least one electrically conductive connecting line which connects the electronic component to the conductor structure. A getter layer is thermally sprayed on the inner face of the housing to protect the metal parts, which transmit current or data in the interior of the control device, against corrosive gases. The getter layer has a high specific surface area.

摘要翻译： 用于机动车辆的控制装置包括具有壳体盖和壳体基座的壳体，壳体盖和壳体基座之间的密封装置，至少一个具有导电轨道的电路载体，以及至少一个电子部件， 电路载体。 控制装置还包括至少一个延伸出壳体内部的导体结构，以及将电子部件连接到导体结构的至少一个导电连接线。 吸气剂层被热喷涂在壳体的内表面上，以保护将控制装置内部的电流或数据传输到腐蚀性气体的金属部件。 吸气剂层具有高比表面积。

公开(公告)号：US09449214B2

公开(公告)日：2016-09-20

申请号：US14894162

申请日：2014-07-01

申请人： Fingerprint Cards AB

发明人： Karl Lundahl

IPC分类号： G06K9/20 ,  G06K9/00 ,  H01L23/00 ,  H01L23/28 ,  H01L23/31 ,  G06K7/08 ,  H01L23/26

CPC分类号： G06K9/00053 ,  G06K7/08 ,  G06K9/00006 ,  G06K9/00013 ,  G06K9/0002 ,  G06K9/20 ,  G06K9/209 ,  H01L23/26 ,  H01L23/28 ,  H01L23/3178 ,  H01L23/562 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： A sensing device comprising a plurality of sensing elements, each of the sensing elements being configured to provide a signal indicative of an electromagnetic coupling between the sensing element and a finger placed on a surface of the sensing device, a first layer arranged to cover the plurality of sensing elements, the first layer comprising a plurality of recesses, and a second layer arranged to cover the first layer, the second layer having hydrophobic surface properties. There is also provided a method for manufacturing such a sensing device.

摘要翻译： 一种感测装置，包括多个感测元件，每个感测元件被配置为提供指示感测元件和放置在感测装置的表面上的手指之间的电磁耦合的信号;布置成覆盖多个感测元件的第一层 感测元件，第一层包括多个凹部，以及布置成覆盖第一层的第二层，第二层具有疏水表面性质。 还提供了一种用于制造这种感测装置的方法。

公开(公告)号：US09425068B2

公开(公告)日：2016-08-23

申请号：US14738513

申请日：2015-06-12

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Chao Zheng

IPC分类号： H01L23/04 ,  H01L23/06 ,  H01L23/26 ,  H01L21/54 ,  H01L21/50

CPC分类号： H01L21/54 ,  B81C1/00293 ,  H01L21/50 ,  H01L23/26 ,  H01L2924/1461 ,  H01L2924/1615 ,  H01L2924/16251

摘要： A method for manufacturing semiconductor device may include the following steps: performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure; performing a heat treatment to release a gas from the first composite structure; performing a cleaning process to remove an oxide layer from the first composite structure; and combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate substructure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component.

摘要翻译： 制造半导体器件的方法可以包括以下步骤：执行蚀刻工艺以从第一复合结构去除牺牲层，其中第一复合结构包括第一衬底结构; 进行热处理以从第一复合结构释放气体; 执行清洁处理以从所述第一复合结构去除氧化物层; 以及将所述第一复合结构与包括第二基板结构和位于所述第二基板子结构上的电子部件的第二复合结构组合，使得所述第一基板结构与所述第二基板结构组合以形成封闭所述电子 零件。

公开(公告)号：US20160118466A1

公开(公告)日：2016-04-28

申请号：US14987818

申请日：2016-01-05

申请人： Infineon Technologies AG

发明人： Johannes Laven ,  Hans-Joachim Schulze

IPC分类号： H01L29/32 ,  H01L23/532 ,  H01L23/528 ,  H01L29/36 ,  H01L23/26

CPC分类号： H01L21/265 ,  H01L21/26506 ,  H01L21/283 ,  H01L21/3221 ,  H01L23/26 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53228 ,  H01L29/0878 ,  H01L29/32 ,  H01L29/36 ,  H01L29/456 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for processing a semiconductor carrier is provided, the method including: providing a semiconductor carrier including a doped substrate region and a device region disposed over a first side of the doped substrate region, the device region including at least part of one or more electrical devices; and implanting ions into the doped substrate region to form a gettering region in the doped substrate region of the semiconductor carrier.

摘要翻译： 提供了一种用于处理半导体载体的方法，所述方法包括：提供包括掺杂衬底区域和设置在所述掺杂衬底区域的第一侧上的器件区域的半导体载体，所述器件区域包括至少部分一个或多个电 设备; 以及将离子注入到掺杂衬底区域中以在半导体载体的掺杂衬底区域中形成吸杂区域。

公开(公告)号：US20160035589A1

公开(公告)日：2016-02-04

申请号：US14738513

申请日：2015-06-12

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Chao ZHENG

IPC分类号： H01L21/52 ,  H01L21/54 ,  H01L23/04 ,  H01L23/26 ,  H01L23/06

CPC分类号： H01L21/54 ,  B81C1/00293 ,  H01L21/50 ,  H01L23/26 ,  H01L2924/1461 ,  H01L2924/1615 ,  H01L2924/16251

摘要： A method for manufacturing semiconductor device may include the following steps: performing an etching process to remove a sacrificial layer from a first composite structure, wherein the first composite structure includes a first substrate structure; performing a heat treatment to release a gas from the first composite structure; performing a cleaning process to remove an oxide layer from the first composite structure; and combining the first composite structure with a second composite structure that includes a second substrate structure and an electronic component positioned on the second substrate substructure, such that the first substrate structure is combined with the second substrate structure to form an enclosure structure that encloses the electronic component.

摘要翻译： 制造半导体器件的方法可以包括以下步骤：执行蚀刻工艺以从第一复合结构去除牺牲层，其中第一复合结构包括第一衬底结构; 进行热处理以从第一复合结构释放气体; 执行清洁处理以从所述第一复合结构去除氧化物层; 以及将所述第一复合结构与包括第二基板结构和位于所述第二基板子结构上的电子部件的第二复合结构组合，使得所述第一基板结构与所述第二基板结构组合以形成封闭所述电子 零件。

公开(公告)号：US09196556B2

公开(公告)日：2015-11-24

申请号：US14193437

申请日：2014-02-28

申请人： Raytheon Company

发明人： Roland Gooch ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas Allan Kocian ,  Buu Diep

IPC分类号： H01L23/26 ,  B32B3/10 ,  B32B15/04

CPC分类号： C23C14/28 ,  B32B3/10 ,  B32B15/04 ,  B32B2255/205 ,  B32B2457/00 ,  C23C14/06 ,  G01J5/045 ,  H01L23/26 ,  H01L2924/0002 ,  Y10T428/24802 ,  H01L2924/00

摘要： A getter structure and method wherein a layer of seed material is deposited on a predetermined region of a surface of a structure under conditions to form a plurality of nucleation sites on a surface of the structure. The nucleation sites have an average height over the surface area of the predetermined region of less than one molecule thick. Subsequently a getter material is deposited over the surface to form a plurality of getter material members projecting outwardly from the nucleation sites.

摘要翻译： 一种吸气剂结构和方法，其中在结构的表面上形成多个成核位置的条件下，将种子材料层沉积在结构的表面的预定区域上。 成核位置具有小于一分子厚的预定区域的表面积的平均高度。 随后，吸气剂材料沉积在表面上以形成从成核位置向外突出的多个吸气材料构件。

公开(公告)号：US09196446B2

公开(公告)日：2015-11-24

申请号：US11793027

申请日：2005-12-14

申请人： Patricia Blanco-Garcia ,  Paul J Collier ,  John West ,  Alison M Wagland

发明人： Patricia Blanco-Garcia ,  Paul J Collier ,  John West ,  Alison M Wagland

IPC分类号： H01J7/18 ,  B01J20/06 ,  B01J20/18 ,  B01J20/16 ,  B01J20/28 ,  C01B3/00 ,  H01L23/26

CPC分类号： H01J7/183 ,  B01J20/06 ,  B01J20/165 ,  B01J20/18 ,  B01J20/2803 ,  B01J2220/42 ,  C01B3/001 ,  H01L23/26 ,  H01L2924/0002 ,  Y02E60/324 ,  H01L2924/00

摘要： A getter composition suitable for gettering hydrogen comprises a first metal oxide and a second metal oxide, said first metal oxide being more readily reducible in hydrogen at temperatures between 0° C. and 100° C. than said second metal oxide.

摘要翻译： 适于吸收氢的吸气剂组合物包括第一金属氧化物和第二金属氧化物，所述第一金属氧化物在0℃至100℃之间的温度下比在所述第二金属氧化物中更容易在氢气中还原。

公开(公告)号：US09177828B2

公开(公告)日：2015-11-03

申请号：US13024806

申请日：2011-02-10

申请人： Michael Tan ,  Cheng P. Pour

发明人： Michael Tan ,  Cheng P. Pour

IPC分类号： H01L23/02 ,  H01L23/20 ,  H01L23/28 ,  H01L21/322 ,  H01L23/26 ,  H01L23/00 ,  H01L27/146 ,  H01L31/18 ,  H01L51/52 ,  H01L23/31

CPC分类号： H01L23/26 ,  H01L21/3221 ,  H01L21/3225 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/564 ,  H01L27/14698 ,  H01L31/186 ,  H01L51/5259 ,  H01L2224/16225 ,  H01L2924/15311 ,  Y10T428/28

摘要： Disclosed embodiments include external gettering provided by electronic packaging. An external gettering element for a semiconductor substrate, which may be incorporated as part of an electronic packaging for the structure, is disclosed. Semiconductor structures and stacked semiconductor structures including an external gettering element are also disclosed. An encapsulation mold compound providing external gettering is also disclosed. Methods of fabricating such devices are also disclosed.

摘要翻译： 公开的实施例包括由电子包装提供的外部吸气。 公开了一种用于半导体衬底的外部吸杂元件，其​​可以被结合作为用于该结构的电子封装的一部分。 还公开了包括外部吸杂元件的半导体结构和堆叠半导体结构。 还公开了提供外部吸气剂的封装模具化合物。 还公开了制造这种装置的方法。