公开(公告)号：US09870968B2

公开(公告)日：2018-01-16

申请号：US15088822

申请日：2016-04-01

申请人： Erick Merle Spory ,  Timothy Mark Barry

发明人： Erick Merle Spory ,  Timothy Mark Barry

IPC分类号： H01L23/20 ,  H01L23/10 ,  H01L21/66 ,  H01L23/00 ,  H01L23/26

CPC分类号： H01L23/10 ,  H01L22/14 ,  H01L23/26 ,  H01L24/03 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/98 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/838 ,  H01L2224/8501 ,  H01L2224/85345 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/2075 ,  H01L2924/00 ,  H01L2224/32245

摘要： A packaged integrated circuit for operating reliably at elevated temperatures is provided. The packaged integrated circuit includes a reconditioned die, which includes a fully functional semiconductor die that has been previously extracted from a different packaged integrated circuit. The packaged integrated circuit also includes a hermetic package comprising a base and a lid and a plurality of bond wires. The reconditioned die is placed into a cavity in the base. After the reconditioned die is placed into the cavity, the plurality of bond wires are bonded between pads of the reconditioned die and package leads of the hermetic package base or downbonds. After bonding the plurality of bond wires, the lid is sealed to the base.

公开(公告)号：US20170294363A1

公开(公告)日：2017-10-12

申请号：US15626661

申请日：2017-06-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yao-Wen Chang ,  Cheng-Yuan Tsai ,  Kai-Wen Cheng

IPC分类号： H01L23/26 ,  H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L23/522 ,  H01L29/792

CPC分类号： H01L23/26 ,  H01L21/02186 ,  H01L21/28282 ,  H01L21/76868 ,  H01L21/76877 ,  H01L23/5226 ,  H01L29/4234

摘要： A method includes providing a semiconductor device disposed on a substrate, wherein the semiconductor device includes a semiconductor device feature, forming a conductive layer over the substrate such that the conductive layer is electrically coupled to the semiconductor device feature, forming a getter layer over the conductive layer, wherein the getter layer includes a first layer that is formed of titanium and a second layer overlying the first layer that is formed of tantalum nitride, and forming an interconnect layer over the getter layer such that the interconnect layer is electrically coupled to the semiconductor device feature.

公开(公告)号：US09756731B2

公开(公告)日：2017-09-05

申请号：US14758334

申请日：2014-02-25

申请人： KYOCERA Corporation

发明人： Noritaka Niino

IPC分类号： H05K1/18 ,  H05K1/03 ,  H01L23/26 ,  H05K1/02 ,  H01L23/057

CPC分类号： H05K1/185 ,  H01L23/057 ,  H01L23/26 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/1461 ,  H05K1/0296 ,  H05K1/0306 ,  H01L2924/00014 ,  H01L2924/00

摘要： A package for housing an electronic component, which is provided with: a substrate part that comprises an insulating substrate, which is formed of a ceramic sintered body and comprises a recess portion, and a wiring conductor which is provided on the insulating substrate; and a metal portion which is formed of a sintered body of a getter metal material and is directly bonded to the recess portion.

公开(公告)号：US09754850B2

公开(公告)日：2017-09-05

申请号：US15110907

申请日：2014-12-02

申请人： Robert Bosch GmbH

发明人： Isabel Faria ,  Peter Pfeiffer ,  Heiko Elsinger ,  Andre Hahn

IPC分类号： H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  C09D183/04 ,  H01L23/26 ,  C08G77/12 ,  C08G77/20 ,  C08K3/22 ,  C08K3/26

CPC分类号： H01L23/295 ,  C08G77/12 ,  C08G77/20 ,  C08K2003/2227 ,  C08K2003/265 ,  C08K2003/267 ,  C08K2201/003 ,  C08K2201/005 ,  C09D183/04 ,  H01L21/563 ,  H01L23/26 ,  H01L23/296 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/32 ,  H01L2224/29611 ,  H01L2224/32225 ,  H01L2924/0002 ,  H01L2924/186 ,  C08L83/00 ,  H01L2924/00 ,  C08K3/26

摘要： A circuit carrier. The circuit carrier has at least one electronic component, the electronic component being soldered to the circuit carrier, in particular with the aid of a flux. The circuit carrier has, in particular, an electrically insulating protective layer for anti-condensation, a surface of the circuit carrier being covered at least partially with the protective layer. The protective layer of the circuit carrier is formed by a silicon polymer layer designed to be activatable with the aid of ultraviolet radiation, the silicon polymer layer having filler particles distributed in the silicon polymer layer, in particular homogenously. At least a part of the filler particles or all filler particles have at least one salt of an alkaline earth metal.

公开(公告)号：US09653534B2

公开(公告)日：2017-05-16

申请号：US14572974

申请日：2014-12-17

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Eduard A. Cartier ,  Michael P. Chudzik ,  Aritra Dasgupta ,  Herbert L. Ho ,  Donghun Kang ,  Rishikesh Krishnan ,  Vijay Narayanan ,  Kern Rim

IPC分类号： H01L29/66 ,  H01L49/02 ,  H01L27/108 ,  H01L23/26

CPC分类号： H01L21/02365 ,  H01G4/005 ,  H01L21/02178 ,  H01L21/02617 ,  H01L21/20 ,  H01L21/3221 ,  H01L23/26 ,  H01L27/10861 ,  H01L27/1087 ,  H01L28/60 ,  H01L28/90 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

公开(公告)号：US09620428B2

公开(公告)日：2017-04-11

申请号：US15217777

申请日：2016-07-22

申请人： Monolith Semiconductor Inc.

发明人： Kevin Matocha ,  John Nowak ,  Kiran Chatty ,  Sujit Banerjee

IPC分类号： H01L29/45 ,  H01L23/26 ,  H01L23/00 ,  H01L29/16 ,  H01L29/78 ,  H01L21/283 ,  H01L23/31 ,  H01L29/10 ,  H01L21/04 ,  H01L29/66 ,  H01L29/08 ,  H01L21/8234

CPC分类号： H01L23/26 ,  H01L21/0445 ,  H01L21/0485 ,  H01L21/283 ,  H01L21/823475 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L29/0615 ,  H01L29/0843 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/66893 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/7811 ,  H01L29/7823 ,  H01L29/8083 ,  H01L29/872 ,  H01L2224/02166 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/0519 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552

摘要： Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or discontinuous film. The device can be a SiC semiconductor device such as a SiC vertical MOSFET. Methods of making the devices are also described. Semiconductor devices and methods of making the same comprising source ohmic contacts formed using a self-aligned process are also described. The source ohmic contacts can comprise titanium silicide and/or titanium silicide carbide and can act as a getter material.

公开(公告)号：US09620427B2

公开(公告)日：2017-04-11

申请号：US15098855

申请日：2016-04-14

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Chao Zheng ,  Junde Ma ,  Liangliang Guo ,  Wei Wang

IPC分类号： H01L23/04 ,  H01L23/26 ,  H01L23/522 ,  B81B7/00 ,  H01L49/02

CPC分类号： H01L23/26 ,  B81B7/0038 ,  H01L23/04 ,  H01L23/5227 ,  H01L28/10

摘要： A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

公开(公告)号：US09598280B2

公开(公告)日：2017-03-21

申请号：US14537529

申请日：2014-11-10

申请人： Freescale Semiconductor, Inc.

发明人： Akhilesh K. Singh ,  Dwight L. Daniels ,  Darrel R. Frear ,  Stephen R. Hooper

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L23/26 ,  B81C1/00

CPC分类号： B81C1/00309 ,  B81B2201/0264 ,  B81B2207/012 ,  H01L23/26 ,  H01L23/29 ,  H01L23/3135 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49109 ,  H01L2924/00014

摘要： A device in which an electronic circuit positioned within a cavity of a package housing is encased by a bubble restrictor material, with a media resistant material overlaying the bubble restrictor material. The bubble restrictor material functions to inhibit the formation and growth of moisture-related bubbles within the material, including at the interfaces of the material and surfaces within the package housing. The media resistant material is resistant to physical and chemical alterations by media within an external environment to which the device is exposed. The media resistant material and bubble resistant material function to transfer a sensed characteristic of the media to the electronic circuit.

公开(公告)号：US09460976B2

公开(公告)日：2016-10-04

申请号：US14004077

申请日：2012-03-16

申请人： Daniel Garden ,  Jan Jongman ,  Martin Lewis

发明人： Daniel Garden ,  Jan Jongman ,  Martin Lewis

IPC分类号： H01L23/20 ,  H01L23/26 ,  G02F1/161 ,  H01L51/52 ,  H01L27/28 ,  H01L21/56 ,  H01L23/10

CPC分类号： H01L23/26 ,  G02F1/161 ,  H01L21/56 ,  H01L23/10 ,  H01L27/283 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic switching device array encapsulated in an encapsulating structure; wherein said array is exposed to one or more gas pockets between said array and said encapsulating structure.

摘要翻译： 封装在封装结构中的电子开关器件阵列; 其中所述阵列暴露于所述阵列和所述封装结构之间的一个或多个气穴。

公开(公告)号：US09431313B1

公开(公告)日：2016-08-30

申请号：US14626242

申请日：2015-02-19

申请人： FREESCALE SEMICONDUCTOR, INC.

发明人： Varughese Mathew ,  Thomas H. Koschmieder

IPC分类号： H01L23/26 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H05K1/18

CPC分类号： H01L23/26 ,  H01L23/3121 ,  H01L23/49503 ,  H01L23/49551 ,  H01L23/49586 ,  H01L24/00 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A device includes an integrated circuit (IC) carrier for a semiconductor device, and a coating on the IC carrier. In the presence of an electrical field or a magnetic field, the coating includes a first functional group that attracts anions and a second functional group that attracts cations.

摘要翻译： 一种器件包括用于半导体器件的集成电路（IC）载体和IC载体上的涂层。 在存在电场或磁场的情况下，涂层包括吸引阴离子的第一官能团和吸引阳离子的第二官能团。