公开(公告)号：US09859464B2

公开(公告)日：2018-01-02

申请号：US14757937

申请日：2015-12-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Natalie Fellows DeMille ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/44 ,  H01L33/58 ,  H01L33/00 ,  H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/14 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

公开(公告)号：US09793435B2

公开(公告)日：2017-10-17

申请号：US14953858

申请日：2015-11-30

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell, Jr. ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L33/16 ,  H01L33/00 ,  B82Y20/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01S5/343 ,  H01L33/02 ,  H01L21/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

公开(公告)号：US20170130910A1

公开(公告)日：2017-05-11

申请号：US15412289

申请日：2017-01-23

Applicant: The Regents of the University of California

Inventor： Kristin A. Denault ,  Steven P. DenBaars ,  Ram Seshadri

IPC: F21K9/64 ,  F21V29/70 ,  F21V8/00 ,  F21K9/61 ,  F21V7/00 ,  F21V21/10 ,  F21V9/16 ,  F21V3/00

CPC classification number: F21K9/64 ,  F21K9/61 ,  F21S8/08 ,  F21V3/00 ,  F21V7/00 ,  F21V9/30 ,  F21V21/10 ,  F21V29/70 ,  F21W2131/105 ,  F21Y2101/00 ,  F21Y2115/30 ,  G02B6/00 ,  G02B6/0005

Abstract: A high-power, high-brightness lighting system for large venue lighting, which includes a laser diode as the excitation source and one or more phosphor materials placed at a remote distance from the laser source. The invention offers a lighting system with the advantages of high brightness, high efficiency, high luminous efficacy, long lifetimes, quick turn-on times, suitable color properties, environmental sustainability, and easy maintenance, which may allow for smart and flexible control over large area lighting systems with resulting savings in operating and maintenance costs.

公开(公告)号：US20170077356A1

公开(公告)日：2017-03-16

申请号：US15266990

申请日：2016-09-15

Applicant: The Regents of the University of California

Inventor： Asad J. Mughal ,  Sang Ho Oh ,  Steven P. DenBaars

IPC: H01L33/42 ,  H01L33/32

CPC classification number: H01L33/42 ,  H01L31/022483 ,  H01L33/32 ,  H01L2933/0016

Abstract: A method for fabricating a Zinc Oxide (ZnO) conductive film on a semiconductor material, including depositing a doped ZnO seed layer on a diode, wherein the ZnO seed layer forms an electrical contact to the diode; and depositing a ZnO layer on the ZnO seed layer, wherein the ZnO seed layer and the ZnO layer each have a thickness, a crystal quality, and a doping level such that (1) the diode comprising III-nitride material is turned on with a turn on voltage of 2.75 volts or less applied across the ZnO layers and the diode, and (2) a contact resistance, of a structure comprising the ZnO layers and the diode, is lower as compared to a contact resistance of a structure comprising the ZnO layer directly on the diode without the ZnO seed layer.

Abstract translation: 一种在半导体材料上制造氧化锌（ZnO）导电膜的方法，包括在二极管上沉积掺杂的ZnO种子层，其中ZnO籽晶层与二极管形成电接触; 以及在所述ZnO籽晶层上沉积ZnO层，其中所述ZnO籽晶层和所述ZnO层各自具有厚度，晶体质量和掺杂水平，使得（1）包含III族氮化物材料的二极管被接通， 在ZnO层和二极管两端施加2.75伏或更小的导通电压，以及（2）包含ZnO层和二极管的结构的接触电阻与包含ZnO的结构的接触电阻相比较低 层直接在二氧化硅上没有ZnO种子层。

公开(公告)号：US20160156155A1

公开(公告)日：2016-06-02

申请号：US14820258

申请日：2015-08-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/183 ,  H01S5/065 ,  H01S5/10

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。

公开(公告)号：US09356431B2

公开(公告)日：2016-05-31

申请号：US14766924

申请日：2014-02-13

Applicant: The Regents of the University of California

Inventor： Arash Pourhashemi ,  Robert M. Farrell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/30 ,  H01S5/40 ,  H01S5/02

CPC classification number: H01S5/34333 ,  H01S5/0217 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/4025 ,  H01S2304/12

Abstract: A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.

Abstract translation: 输出功率超过1W，斜率效率大于1W / A，外部量子效率（EQE）超过25％的高功率蓝紫色III族氮化物半极性激光二极管（LD），以及 更优选超过35％。 这些工作特性使这些激光二极管适用于固态照明系统。

公开(公告)号：US20160079738A1

公开(公告)日：2016-03-17

申请号：US14953858

申请日：2015-11-30

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Robert M. Farrell ,  Troy J. Baker ,  Arpan Chakraborty ,  Benjamin A. Haskell ,  P. Morgan Pattison ,  Rajat Sharma ,  Umesh K. Mishra ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/22 ,  H01S5/323 ,  H01S5/32

CPC classification number: H01L33/16 ,  B82Y20/00 ,  C30B23/025 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0004 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/02 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract translation: 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极性（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

公开(公告)号：US09040326B2

公开(公告)日：2015-05-26

申请号：US14456768

申请日：2014-08-11

Applicant: The Regents of the University of California

Inventor： Hong Zhong ,  Anurag Tyagi ,  Kenneth J. Vampola ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L21/02 ,  H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01L33/18

CPC classification number: H01L33/22 ,  H01L21/02433 ,  H01L21/02458 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0083

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract translation: III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光 萃取。 纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

公开(公告)号：US20140376584A1

公开(公告)日：2014-12-25

申请号：US14482760

申请日：2014-09-10

Applicant: The Regents of the University of California

Inventor： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC: H01S5/343 ,  H01S5/34

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US20140308769A1

公开(公告)日：2014-10-16

申请号：US14313691

申请日：2014-06-24

Applicant: The Regents of the University of California

Inventor： Robert M. Farrell ,  Michael Iza ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/02 ,  H01S5/343 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L21/02609 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/005 ,  H01L33/007 ,  H01L33/18 ,  H01L33/32 ,  H01S5/343 ,  Y10T428/31

Abstract: A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.

Abstract translation: （Ga，Al，In，B）N薄膜中的（Ga，Al，In，B）N薄膜的生长形态的改进方法，其中，（Ga，Al，In，B） 直接在非极性或半极性（Ga，Al，In，B）N底物或模板上生长，并且在生长期间使用的载体气体的一部分由惰性气体组成。 可以在由本发明生长的光滑（Ga，Al，In，B）N薄膜上生长非极性或半极性氮化物LED和二极管激光器。