-
公开(公告)号:US12197731B2
公开(公告)日:2025-01-14
申请号:US18492296
申请日:2023-10-23
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern
Abstract: Memory modules, systems, memory controllers and associated methods are disclosed. In one embodiment, a memory module includes a module substrate having first and second memory devices. Buffer circuitry disposed on the substrate couples to the first and second memory devices via respective first and second secondary interfaces. The buffer circuitry includes a primary signaling interface for coupling to a group of signaling links associated with a memory controller. The primary signaling interface operates at a primary signaling rate and the first and second secondary data interfaces operate at a secondary signaling rate. During a first mode of operation, the primary interface signaling rate is at least twice the secondary signaling rate. A first time interval associated with a transfer of first column data via the first secondary interface temporally overlaps a second time interval involving second column data transferred via the second secondary interface.
-
公开(公告)号:US12135645B2
公开(公告)日:2024-11-05
申请号:US18203569
申请日:2023-05-30
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt , Christopher Haywood
IPC: G06F12/0804 , G06F12/12 , G11C14/00
Abstract: A hybrid volatile/non-volatile memory module employs a relatively fast, durable, and expensive dynamic, random-access memory (DRAM) cache to store a subset of data from a larger amount of relatively slow and inexpensive nonvolatile memory (NVM). A module controller prioritizes accesses to the DRAM cache for improved speed performance and to minimize programming cycles to the NVM. Data is first written to the DRAM cache where it can be accessed (written to and read from) without the aid of the NVM. Data is only written to the NVM when that data is evicted from the DRAM cache to make room for additional data. Mapping tables relating NVM addresses to physical addresses are distributed throughout the DRAM cache using cache line bits that are not used for data.
-
公开(公告)号:US12086039B2
公开(公告)日:2024-09-10
申请号:US18096812
申请日:2023-01-13
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , J. James Tringali , Ely Tsern
CPC classification number: G06F11/1471 , G06F3/0619 , G06F3/0634 , G06F3/0647 , G06F3/0685 , G11C7/20 , G11C14/0018 , G06F2201/805 , G06F2201/84
Abstract: The embodiments described herein describe technologies for non-volatile memory persistence in a multi-tiered memory system including two or more memory technologies for volatile memory and non-volatile memory.
-
公开(公告)号:US20240289047A1
公开(公告)日:2024-08-29
申请号:US18412731
申请日:2024-01-15
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt , Torsten Partsch
IPC: G06F3/06 , G06F13/16 , G11C7/06 , G11C7/10 , G11C7/22 , G11C11/4076 , G11C11/4096 , H01L25/065
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679 , G06F13/1668 , G11C7/06 , G11C7/1057 , G11C7/106 , G11C7/1066 , G11C7/1087 , G11C7/1093 , G11C7/22 , G11C11/4076 , G11C11/4096 , H01L25/0657 , G06F2213/16 , G11C7/1015 , G11C2207/107 , G11C2207/2272 , G11C2207/2281 , G11C2207/229 , H01L2225/06541
Abstract: First data is read out of a core storage array of a memory component over a first time interval constrained by data output bandwidth of the core storage array. After read out from the core storage array, the first data is output from the memory component over a second time interval that is shorter than the first time interval and that corresponds to a data transfer bandwidth greater than the data output bandwidth of the core storage array.
-
公开(公告)号:US20240272980A1
公开(公告)日:2024-08-15
申请号:US18444320
申请日:2024-02-16
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Brent Steven Haukness
CPC classification number: G06F11/1008 , G06F11/1048 , G06F12/0246 , G11C29/52
Abstract: A memory device is disclosed that includes a row of storage locations that form plural columns. The plural columns include data columns to store data and a tag column to store tag information associated with error locations in the data columns. Each data column is associated with an error correction location including an error code bit location. Logic retrieves and stores the tag information associated with the row in response to activation of the row. A bit error in an accessed data column is repaired by a spare bit location based on the tag information.
-
公开(公告)号:US20240257863A1
公开(公告)日:2024-08-01
申请号:US18584371
申请日:2024-02-22
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely K. Tsern , John E. Linstadt , Thomas A. Giovannini , Scott C. Best , Kenneth L. Wright
IPC: G11C11/4093 , G11C5/02 , G11C5/06 , G11C7/10 , G11C8/12 , G11C11/4076 , G11C11/408 , G11C11/4096 , G11C29/00 , H01L23/00 , H01L25/065 , H01L25/10 , H01L25/18
CPC classification number: G11C11/4093 , G11C5/025 , G11C5/063 , G11C11/4076 , G11C11/408 , G11C11/4096 , G11C29/824 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/18 , G11C7/10 , G11C7/1012 , G11C7/1066 , G11C7/1093 , G11C8/12 , H01L24/16 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/06135 , H01L2224/06136 , H01L2224/13025 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06558 , H01L2225/06562 , H01L2225/06572 , H01L2225/06586 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/14 , H01L2924/1436 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/181
Abstract: A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. Each DRAM component includes multiplexers that allow either of the data interfaces to write data to or read data from a common set of memory banks, and to selectively relay write and read data to and from other components, bypassing the local banks. Delay elements can impose selected read/write delays to align read and write transactions from and to disparate DRAM components.
-
公开(公告)号:US12032845B2
公开(公告)日:2024-07-09
申请号:US17505503
申请日:2021-10-19
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , John Eric Linstadt
IPC: G06F3/06
CPC classification number: G06F3/0644 , G06F3/0604 , G06F3/0679
Abstract: A compute system includes an execution unit (e.g. of a CPU) with a memory controller providing access to a hybrid physical memory. The physical memory is “hybrid” in that it combines a cache of relatively fast, durable, and expensive memory (e.g. DRAM) with a larger amount of relatively slow, wear-sensitive, and inexpensive memory (e.g. flash). A hybrid controller component services memory commands from the memory controller component and additionally manages cache fetch and evict operations that keep the cache populated with instructions and data that have a high degree of locality of reference. The memory controller alerts the hybrid controller of available access slots to the cache so that the hybrid controller can use the available access slots for cache fetch and evict operations with minimal interference to the memory controller.
-
公开(公告)号:US11963299B2
公开(公告)日:2024-04-16
申请号:US17726354
申请日:2022-04-21
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Suresh Rajan
IPC: G11C7/00 , G06F1/18 , G06F13/16 , G06F13/40 , G06F15/78 , G11C5/04 , G11C5/06 , G11C7/10 , G11C11/408 , G11C11/4093 , H05K1/11 , H05K1/18
CPC classification number: H05K1/11 , G06F1/184 , G06F13/1694 , G06F13/4068 , G06F15/7803 , G11C5/04 , G11C5/06 , G11C7/10 , G11C11/4082 , G11C11/4093 , H05K1/181 , H05K2201/10159 , H05K2201/10189
Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.
-
公开(公告)号:US11960418B2
公开(公告)日:2024-04-16
申请号:US17965684
申请日:2022-10-13
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Amir Amirkhany , Suresh Rajan , Mohammad Hekmat , Dinesh Patil
IPC: G11C7/10 , G06F13/16 , G06F13/40 , G11C5/02 , G11C7/22 , G11C8/18 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C11/419 , G11C29/02
CPC classification number: G06F13/1673 , G06F13/4068 , G11C5/02 , G11C7/10 , G11C7/1012 , G11C7/1021 , G11C7/106 , G11C7/1066 , G11C7/1072 , G11C7/1087 , G11C7/1093 , G11C7/222 , G11C8/18 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C11/419 , G11C29/022 , G11C29/023 , G11C29/028
Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.
-
公开(公告)号:US11960344B2
公开(公告)日:2024-04-16
申请号:US18092004
申请日:2022-12-30
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Robert E. Palmer , John W. Poulton , Andrew M. Fuller
IPC: G06F1/3237 , G06F1/12 , G06F1/3225 , G06F1/324 , G06F3/06 , G06F13/16 , G11C7/04 , G11C7/10 , G11C7/22 , G11C11/4076 , G11C11/4096 , G06F9/38 , G06F12/0855 , G06F13/36
CPC classification number: G06F1/3237 , G06F1/12 , G06F1/3225 , G06F1/324 , G06F3/0604 , G06F3/0625 , G06F3/0629 , G06F3/0673 , G06F13/1689 , G11C7/04 , G11C7/10 , G11C7/1051 , G11C7/1066 , G11C7/1072 , G11C7/1078 , G11C7/109 , G11C7/1093 , G11C7/22 , G11C7/222 , G11C7/225 , G11C11/4076 , G11C11/4096 , G06F9/3836 , G06F12/0857 , G06F13/36 , G06F2201/88 , G11C2207/2254 , Y02D10/00
Abstract: A memory controller component of a memory system stores memory access requests within a transaction queue until serviced so that, over time, the transaction queue alternates between occupied and empty states. The memory controller transitions the memory system to a low power mode in response to detecting the transaction queue is has remained in the empty state for a predetermined time. In the transition to the low power mode, the memory controller disables oscillation of one or more timing signals required to time data signaling operations within synchronous communication circuits of one or more attached memory devices and also disables one or more power consuming circuits within the synchronous communication circuits of the one or more memory devices.
-
-
-
-
-
-
-
-
-