公开(公告)号：US09552968B2

公开(公告)日：2017-01-24

申请号：US14277010

申请日：2014-05-13

Applicant: Applied Materials, Inc.

Inventor： Martin Deehan ,  Matt Cheng-Hsiung Tsai ,  Nan Lu ,  David T. Or ,  Mei Chang

IPC: B08B7/04 ,  H01J37/32 ,  B08B7/00 ,  H01L21/67

CPC classification number: H01J37/32862 ,  B08B7/0035 ,  H01L21/67069

Abstract: Embodiments of the present invention generally include an apparatus for plasma cleaning and a method for plasma cleaning. The apparatus can include a lid body having a first surface for facing a pedestal during cleaning and a second surface opposite the first surface and substantially parallel to the first surface, the second surface having a first indentation sized to receive a magnet assembly, one or more handles coupled to the second surface of the lid body, and the magnet assembly resting in the first indentation. The method can include removing a sputtering target from the processing chamber, sealing the processing chamber, introducing a gas into the processing chamber, applying an RF bias to a pedestal within the processing chamber, maintaining the pedestal at a substantially constant temperature, and removing material from the pedestal to clean the pedestal.

Abstract translation: 本发明的实施例通常包括用于等离子体清洗的装置和等离子体清洗方法。 该装置可以包括盖体，其具有用于在清洁期间面对基座的第一表面和与第一表面相对的第二表面并且基本上平行于第一表面，第二表面具有第一压痕，其尺寸设置成接收磁体组件，一个或多个 联接到盖体的第二表面的手柄以及静止在第一压痕中的磁体组件。 该方法可以包括从处理室移除溅射靶，密封处理室，将气体引入处理室，向处理室内的基座施加RF偏压，将基座保持在基本恒定的温度，以及去除材料 从基座上清洁基座。

公开(公告)号：US20160273108A1

公开(公告)日：2016-09-22

申请号：US15152731

申请日：2016-05-12

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

IPC: C23C16/455 ,  C23C14/22 ,  C23C16/52

CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

公开(公告)号：US09441298B2

公开(公告)日：2016-09-13

申请号：US14939202

申请日：2015-11-12

Applicant: Applied Materials, Inc.

Inventor： Khaled Z. Ahmed ,  Prabu Gopalraja ,  Atif Noori ,  Mei Chang

IPC: H01L21/44 ,  C23C16/52 ,  H01L21/768 ,  H01L21/67 ,  H01L23/482 ,  H01L29/772 ,  H01L21/285 ,  C23C14/22 ,  C23C16/02 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C14/22 ,  C23C16/0227 ,  C23C16/45544 ,  H01L21/28525 ,  H01L21/6715 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76843 ,  H01L23/4827 ,  H01L29/772 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.

公开(公告)号：US20160068962A1

公开(公告)日：2016-03-10

申请号：US14939202

申请日：2015-11-12

Applicant: Applied Materials, Inc.

Inventor： Khaled Z. Ahmed ,  Prabu Gopalraja ,  Atif Noori ,  Mei Chang

IPC: C23C16/52 ,  C23C16/455 ,  C23C14/22 ,  C23C16/02

CPC classification number: C23C16/52 ,  C23C14/22 ,  C23C16/0227 ,  C23C16/45544 ,  H01L21/28525 ,  H01L21/6715 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76843 ,  H01L23/4827 ,  H01L29/772 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.

Abstract translation: 描述了用于形成薄膜的装置和方法包括铟和砷。 特别地，这些膜可以在“负载锁定”条件下形成为两个或更多个室的构造。 这些膜可以包括作为掺杂剂的附加组分，例如铝和/或镓。 这种膜可以用于具有低接触电阻的金属/硅触点。 还公开了包括包含砷化铟的膜的装置。

公开(公告)号：US20160064275A1

公开(公告)日：2016-03-03

申请号：US14469980

申请日：2014-08-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Paul F. Ma ,  Hua Ai ,  Jiang Lu ,  Mei Chang ,  David Thompson

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76826 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of selectively depositing a metal selectively onto a metal surface relative to a dielectric surface. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon.

Abstract translation: 相对于电介质表面选择性地将金属选择性地沉积到金属表面上的方法。 方法包括将金属氧化物表面还原成金属表面并保护电介质表面以使其上的沉积最小化。

公开(公告)号：US09245769B2

公开(公告)日：2016-01-26

申请号：US14466808

申请日：2014-08-22

Applicant: Applied Materials, Inc.

Inventor： David T. Or ,  Joshua Collins ,  Mei Chang

IPC: H01L21/48 ,  H01L21/326 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02057 ,  H01L21/324 ,  H01L21/326

Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

Abstract translation: 本文描述了用于处理衬底的方法。 方法可以包括将具有包括氧化硅层的暴露表面的衬底定位在处理室中，偏置衬底，处理衬底以使氧化硅层的一部分粗糙化，将衬底加热到​​第一温度，暴露暴露的表面 将基底置于氟化铵中以形成一种或多种挥发性产物，同时保持第一温度，并将基材加热到高于第一温度的第二温度以升华挥发性产物。

公开(公告)号：US09230815B2

公开(公告)日：2016-01-05

申请号：US14062804

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/02 ,  C23C16/455 ,  H01L21/768 ,  C23C16/14

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

Abstract translation: 提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

公开(公告)号：US20150345017A1

公开(公告)日：2015-12-03

申请号：US14291781

申请日：2014-05-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Mei Chang ,  Chien-Teh Kao ,  Juno Yu-Ting Huang

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/06

CPC classification number: C23C16/45525 ,  C23C16/22 ,  C23C16/4401 ,  C23C16/4581 ,  H01J37/32477 ,  H01J37/32715

Abstract: Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support.

Abstract translation: 本文提供了耐腐蚀基板支撑件和制造耐腐蚀基板支撑件的方法。 在一些实施例中，制造耐腐蚀的衬底支撑件的方法包括将设置在衬底处理室内的衬底支撑件暴露于包含含铝前体的工艺气体; 以及在所述基底支撑体的表面的顶部上沉积含铝层。

公开(公告)号：US09048183B2

公开(公告)日：2015-06-02

申请号：US14147291

申请日：2014-01-03

Applicant: Applied Materials, Inc.

Inventor： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC: H01L21/3205 ,  H01L21/28 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/49

CPC classification number: H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

Abstract translation: 实施例提供了沉积含金属材料的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 提供了一种用于处理衬底的方法，其包括在电介质材料中形成形成特征定义的电介质材料，将功函数材料保形地沉积在特征定义的侧壁和底部上，以及在工作功能上沉积金属栅极填充材料 用于填充特征定义的材料，其中通过使至少一种具有式MXY的金属卤化物前体与其中M是钽，铪，钛和镧的金属卤化物前体反应沉积功函材料，X是选自氟 ，氯，溴或碘，y为3至5。

公开(公告)号：US20240200188A1

公开(公告)日：2024-06-20

申请号：US18590141

申请日：2024-02-28

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/14 ,  C23C16/455 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.