公开(公告)号：USD1021829S1

公开(公告)日：2024-04-09

申请号：US29807560

申请日：2021-09-13

申请人： ROHM CO., LTD.

设计人： Yoshihisa Tsukamoto ,  Akihiro Kimura

摘要： FIG. 1 is a front, top and right side perspective view of a semiconductor module showing our new design;
FIG. 2 is a rear, bottom and left side perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a rear view thereof;
FIG. 5 is a top plan view thereof;
FIG. 6 is a bottom plan view thereof;
FIG. 7 is a right side view thereof; and,
FIG. 8 is a left side view thereof.
The broken lines illustrate portions of the semiconductor module that form no part of the claimed design. The dash-dotted lines denote the boundary of the claim and form no part of the claimed design.

公开(公告)号：US10770380B2

公开(公告)日：2020-09-08

申请号：US16371980

申请日：2019-04-01

申请人： ROHM CO., LTD.

发明人： Akihiro Kimura ,  Takeshi Sunaga ,  Shouji Yasunaga ,  Akihiro Koga

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/433 ,  H01L21/56 ,  H01L23/00 ,  H01L23/36 ,  H01L21/48 ,  H01L23/367 ,  H01L25/065 ,  H01L25/00

摘要： A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

公开(公告)号：US20200161228A1

公开(公告)日：2020-05-21

申请号：US16748260

申请日：2020-01-21

申请人： ROHM CO., LTD.

发明人： Akihiro Kimura ,  Takeshi Sunaga ,  Shouji Yasunaga ,  Akihiro Koga

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L25/00 ,  H01L25/065 ,  H01L23/367 ,  H01L21/56 ,  H01L23/00 ,  H01L23/36 ,  H01L23/433

摘要： A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

公开(公告)号：US10573584B2

公开(公告)日：2020-02-25

申请号：US16251165

申请日：2019-01-18

申请人： ROHM CO., LTD.

发明人： Akihiro Kimura ,  Takeshi Sunaga ,  Shouji Yasunaga ,  Akihiro Koga

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/433 ,  H01L21/56 ,  H01L23/00 ,  H01L23/36 ,  H01L21/48 ,  H01L23/367 ,  H01L25/065 ,  H01L25/00

摘要： A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

公开(公告)号：US10163850B2

公开(公告)日：2018-12-25

申请号：US15707632

申请日：2017-09-18

申请人： ROHM CO., LTD.

发明人： Motoharu Haga ,  Shingo Yoshida ,  Yasumasa Kasuya ,  Toichi Nagahara ,  Akihiro Kimura ,  Kenji Fujii

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  B23K20/00 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56

摘要： A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

公开(公告)号：US09892996B2

公开(公告)日：2018-02-13

申请号：US15265176

申请日：2016-09-14

申请人： ROHM CO., LTD.

发明人： Akihiro Kimura

IPC分类号： H01L23/495 ,  H01L23/373 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/433 ,  H01L23/29 ,  H01L27/02 ,  H01L23/00

CPC分类号： H01L23/49541 ,  H01L21/4853 ,  H01L21/4882 ,  H01L21/561 ,  H01L21/565 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/373 ,  H01L23/3731 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49555 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49589 ,  H01L24/73 ,  H01L27/0211 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer includes an elastic layer exposed toward a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the die pad sections. The elastic layer overlaps with at least a portion of the die pad sections when seen in a thickness direction of the heat radiation layer.

公开(公告)号：US09859194B2

公开(公告)日：2018-01-02

申请号：US15208349

申请日：2016-07-12

申请人： ROHM CO., LTD.

发明人： Akihiro Kimura ,  Tsunemori Yamaguchi

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49513 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49551 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/17738 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512

摘要： A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106b of a semiconductor chip 106, and a second insulating material 112 attached to side surfaces of the semiconductor chip 106, the first insulating material 110 and an island 102. The semiconductor chip 106 is fixed to the island 102 via the first insulating material 110 and the second insulating material 112. The first insulating material 110 ensures a high dielectric strength between the semiconductor chip 106 and the island 102. Though the second insulating material 112 having a modulus of elasticity greater than that of the first insulating material 110, the semiconductor chip 106 is firmly attached to the island 102.

公开(公告)号：US09780069B2

公开(公告)日：2017-10-03

申请号：US14664168

申请日：2015-03-20

申请人： ROHM CO., LTD.

发明人： Motoharu Haga ,  Shingo Yoshida ,  Yasumasa Kasuya ,  Toichi Nagahara ,  Akihiro Kimura ,  Kenji Fujii

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  B23K20/00 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56

CPC分类号： H01L24/85 ,  B23K20/005 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78307 ,  H01L2224/78309 ,  H01L2224/83 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20757 ,  H01L2924/3512 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/207 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/00015

摘要： A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

公开(公告)号：US09613927B2

公开(公告)日：2017-04-04

申请号：US14750897

申请日：2015-06-25

申请人： ROHM CO., LTD.

发明人： Akihiro Kimura ,  Takeshi Sunaga ,  Shouji Yasunaga ,  Akihiro Koga

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/433 ,  H01L23/495 ,  H01L21/56 ,  H01L21/48 ,  H01L23/36 ,  H01L23/367 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L23/49568 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/4882 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/4952 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49555 ,  H01L23/49575 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： A method includes the steps of: preparing a lead frame including a plurality of die pads, and preparing a plurality of semiconductor chips; disposing each of the semiconductor chips on a respective one of the die pads; forming a sealing resin to cover the die pads and the semiconductor chips; and attaching a heat dissipation plate to the die pads by pressing the heat dissipation plate against the die pads via a resin sheet which is an adhesive layer after the sealing resin is formed.

公开(公告)号：US09406591B2

公开(公告)日：2016-08-02

申请号：US14824297

申请日：2015-08-12

申请人： ROHM CO., LTD.

发明人： Akihiro Kimura ,  Tsunemori Yamaguchi

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49513 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49551 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/17738 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01015 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512

摘要： A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106b of a semiconductor chip 106, and a second insulating material 112 attached to side surfaces of the semiconductor chip 106, the first insulating material 110 and an island 102. The semiconductor chip 106 is fixed to the island 102 via the first insulating material 110 and the second insulating material 112. The first insulating material 110 ensures a high dielectric strength between the semiconductor chip 106 and the island 102. Though the second insulating material 112 having a modulus of elasticity greater than that of the first insulating material 110, the semiconductor chip 106 is firmly attached to the island 102.