摘要:
A semiconductor package is provided with an Aluminum alloy lead-frame without noble metal plated on the Aluminum base lead-frame. Aluminum alloy material with proper alloy composition and ratio for making an aluminum alloy lead-frame is provided. The aluminum alloy lead-frame is electroplated with a first metal electroplating layer, a second electroplating layer and a third electroplating layer in a sequence. The lead-frame electroplated with the first, second and third metal electroplating layers is then used in the fabrication process of a power semiconductor package including chip connecting, wire bonding, and plastic molding. After the molding process, the area of the lead-frame not covered by the molding compound is electroplated with a fourth metal electroplating layer that is not easy to be oxidized when exposing to air.
摘要:
The invention generally relates to a packaging method of an ultra-thin chip, more specifically, the invention relates to a method for packaging the ultra-thin chip with solder ball thermo-compression in wafer level packaging process. The method starts with disposing solder balls on metal pads arranged on the front surface of semiconductor chips that are formed at the front surface of a semiconductor wafer. The solder balls are soften by heating the wafer, a compression plate is applied with a pressure on the top ends of the solder balls thus forming a co-planar top surface at the top ends of the solder balls. A molding compound is deposited on the front surface of the wafer with the top ends of the solder balls exposed. The wafer is then ground from its back surface to reduce its thickness to achieve ultra-thin chip.
摘要:
A semiconductor package is provided with an Aluminum alloy lead-frame without noble metal plated on the Aluminum base lead-frame. Aluminum alloy material with proper alloy composition and ratio for making an aluminum alloy lead-frame is provided. The aluminum alloy lead-frame is electroplated with a first metal electroplating layer, a second electroplating layer and a third electroplating layer in a sequence. The lead-frame electroplated with the first, second and third metal electroplating layers is then used in the fabrication process of a power semiconductor package including chip connecting, wire bonding, and plastic molding. After the molding process, the area of the lead-frame not covered by the molding compound is electroplated with a fourth metal electroplating layer that is not easy to be oxidized when exposing to air.
摘要:
A stacked multi-chip packaging structure comprises a lead frame, a first semiconductor chip mounted on the lead frame, a second semiconductor chip flipped-chip mounted on the lead frame, a metal clip mounted on top of the first and second semiconductor chips and a third semiconductor chip stacked on the meal clip; bonding wires electrically connecting electrodes on the third semiconductor chip to the first and second semiconductor chips and the pins of the lead frame; plastic molding encapsulating the lead frame, the chips and the metal clip.
摘要:
A semiconductor device package comprises a lead frame having a die paddle comprising a first chip installation area and a second chip installation area, a recess area formed in the first chip installation area, and multiple metal pillars formed in the recess area, a notch divides the first chip installation area into a transverse base extending transversely and a longitudinal base extending longitudinally, and separates the recess area into a transverse recess part formed in the transverse base and a longitudinal recess part formed in longitudinal base; a portion of a transverse extending part connecting to an external pin extends into a portion inside of the notch.
摘要:
A semiconductor device package comprises a lead frame having a die paddle comprising a first chip installation area and a second chip installation area, a recess area formed in the first chip installation area, and multiple metal pillars formed in the recess area, a notch divides the first chip installation area into a transverse base extending transversely and a longitudinal base extending longitudinally, and separates the recess area into a transverse recess part formed in the transverse base and a longitudinal recess part formed in longitudinal base; a portion of a transverse extending part connecting to an external pin extends into a portion inside of the notch.
摘要:
A stacked multi-chip packaging structure comprises a lead frame, a first semiconductor chip mounted on the lead frame, a second semiconductor chip flipped-chip mounted on the lead frame, a metal clip mounted on top of the first and second semiconductor chips and a third semiconductor chip stacked on the meal clip; bonding wires electrically connecting electrodes on the third semiconductor chip to the first and second semiconductor chips and the pins of the lead frame; plastic molding encapsulating the lead frame, the chips and the metal clip.
摘要:
A semiconductor device comprises a first top electrode and a second top electrode at a front surface of the die, at least a Ni plating layer and an Au plating layer overlaying the Ni plating layer are formed on each of the first top electrode and the second top electrode. A copper clip attaches on the Au plating layer of the second top electrode. A gold (Au) stud bump is formed on the Au plating layer of the first top electrode with a copper wire connected on the stud bump. The Au stud bump is thicker than a thickness of the Au plating layer and thinner than a thickness of the copper clip to avoid copper wire NSOP (non-stick on pad) problem due to Ni plating layer diffusion during the solder reflow process in the copper clip attachment.
摘要:
A semiconductor device package comprises a lead frame having a die paddle comprising a first chip installation area and a second chip installation area, a recess area formed in the first chip installation area, and multiple metal pillars formed in the recess area, a notch divides the first chip installation area into a transverse base extending transversely and a longitudinal base extending longitudinally, and separates the recess area into a transverse recess part formed in the transverse base and a longitudinal recess part formed in longitudinal base; a portion of a transverse extending part connecting to an external pin extends into a portion inside of the notch.