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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20120068258A1

    公开(公告)日：2012-03-22

    申请号：US13052908

    申请日：2011-03-21

    申请人： Syotaro ONO ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    发明人： Syotaro ONO ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    IPC分类号： H01L29/78 ,  H01L21/28

    CPC分类号： H01L29/7811 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/84 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/42372 ,  H01L29/66712 ,  H01L2224/37013 ,  H01L2224/40245 ,  H01L2224/40479 ,  H01L2224/40499 ,  H01L2224/4103 ,  H01L2224/84203 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/37099

    摘要： According to one embodiment, a semiconductor device includes a first main electrode, a control electrode, an extraction electrode, a second insulating film, a plurality of contact electrodes, and a control terminal. The first main electrode is electrically connected to a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type selectively provided on a surface of the first semiconductor region. The control electrode is provided on the first semiconductor region via a first insulating film. The extraction electrode is electrically connected to the control electrode. The second insulating film is provided on the first main electrode and the extraction electrode. The plurality of contact electrodes are provided in an inside of a plurality of first contact holes formed in the second insulating film and are electrically connected to the extraction electrode. The control terminal covers portions of the first main electrode provided on the first semiconductor region, on the second semiconductor region, and on the control electrode, respectively, and the extraction electrode, is electrically connected to the plurality of contact electrodes, and is electrically insulated from the first main electrode by the second insulating film.

    摘要翻译： 根据一个实施例，半导体器件包括第一主电极，控制电极，引出电极，第二绝缘膜，多个接触电极和控制端子。 第一主电极电连接到第一导电类型的第一半导体区域和选择性地设置在第一半导体区域的表面上的第二导电类型的第二半导体区域。 控制电极经由第一绝缘膜设置在第一半导体区域上。 引出电极与控制电极电连接。 第二绝缘膜设置在第一主电极和引出电极上。 多个接触电极设置在形成在第二绝缘膜中的多个第一接触孔的内部，并与引出电极电连接。 控制端子分别覆盖设置在第一半导体区域上，第二半导体区域上和控制电极上的第一主电极的部分，并且引出电极电连接到多个接触电极，并且是电绝缘的 从第一主电极通过第二绝缘膜。