Method for fabricating a carrier-less silicon interposer

    公开(公告)号:US10181411B2

    公开(公告)日:2019-01-15

    申请号:US14950180

    申请日:2015-11-24

    Abstract: An insulating second element is provided and overlies a surface of a first element which consists essentially of a material having a CTE of less than 10 ppm/° C. and has a first thickness in a first direction normal to the surface. Openings extend in the first direction through the second element. The first element is abraded to produce a thinned first element having a second thickness less than the first thickness. Conductive elements are formed at a first side of the interposer coincident with or adjacent to a surface of the thinned first element remote from the second element. A conductive structure extends through the openings in the second element, wherein the conductive elements are electrically connected with terminals of the interposer through the conductive structure, and the terminals are disposed at a second side of the interposer opposite from the first side.

    SURFACE MODIFIED TSV STRUCTURE AND METHODS THEREOF
    29.
    发明申请
    SURFACE MODIFIED TSV STRUCTURE AND METHODS THEREOF 有权
    表面改性TSV结构及其方法

    公开(公告)号:US20140175654A1

    公开(公告)日:2014-06-26

    申请号:US13722365

    申请日:2012-12-20

    Abstract: Microelectronic elements and methods of their manufacture are disclosed. A microelectronic element may include a substrate including an opening extending through a semiconductor region of the substrate, a dielectric layer cover a wall of the opening within at least a first portion of the opening, a first metal disposed within the first portion of the opening, a second metal disposed within a second portion of the opening. The second metal may form at least part of a contact of the microelectronic element.

    Abstract translation: 公开了微电子元件及其制造方法。 微电子元件可以包括:衬底,其包括延伸穿过衬底的半导体区域的开口;电介质层覆盖开口的至少第一部分内的开口的壁;布置在开口的第一部分内的第一金属, 设置在开口的第二部分内的第二金属。 第二金属可以形成微电子元件的接触的至少一部分。

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