Selective nickel plating of aluminum, copper, and tungsten structures
    23.
    发明申请
    Selective nickel plating of aluminum, copper, and tungsten structures 有权
    铝,铜和钨结构的选择性镀镍

    公开(公告)号:US20060046088A1

    公开(公告)日:2006-03-02

    申请号:US10934635

    申请日:2004-09-02

    Abstract: A method of selectively plating nickel on an intermediate semiconductor device structure. The method comprises providing an intermediate semiconductor device structure having at least one aluminum or copper structure and at least one tungsten structure. One of the aluminum or copper structure and the tungsten structure is nickel plated while the other remains unplated. The aluminum or copper structure or the tungsten structure may first be activated toward nickel plating. The activated aluminum or copper structure or the activated tungsten structure may then be nickel plated by immersing the intermediate semiconductor device structure in an electroless nickel plating solution. The unplated aluminum or copper structure or the unplated tungsten structure may subsequently be nickel plated by activating the unplated structure and nickel plating the activated structure. A method of simultaneously plating the aluminum or copper structure and the tungsten structure with nickel is also disclosed, as is an intermediate semiconductor device structure.

    Abstract translation: 在中间半导体器件结构上选择性镀镍的方法。 该方法包括提供具有至少一个铝或铜结构和至少一个钨结构的中间半导体器件结构。 铝或铜结构之一和钨结构是镀镍的,而另一个保持未镀层。 可以首先将铝或铜结构或钨结构活化成镀镍。 然后可以通过将中间半导体器件结构浸入无电镀镍溶液中来将活化的铝或铜结构或活化的钨结构镀镍。 然后通过激活未镀层的结构和镀镍活化的结构,可以将未镀覆的铝或铜结构或未镀覆的钨结构镀镍。 还公开了一种用镍同时电镀铝或铜结构和钨结构的方法,以及中间半导体器件结构。

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