公开(公告)号：US10014196B2

公开(公告)日：2018-07-03

申请号：US14887935

申请日：2015-10-20

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  David Trussell ,  Michael Kellogg ,  Christopher Pena ,  Richard Gould ,  Klay Kunkel

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67196 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67727 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67754 ,  H01L21/67769

Abstract: A wafer transport assembly includes first and second wafer transport modules, and a buffer module coupled between the first and second wafer transport modules. The first and second wafer transport modules and the buffer module are aligned in a single directional axis. The buffer module includes a first buffer stack positioned at a first lateral end of the buffer module, and a second buffer stack positioned at a second lateral end of the buffer module. The first lateral end of the buffer module defines a first side protrusion nested between the first and second wafer transport modules and first and second process modules. The second lateral end of the buffer module defines a second side protrusion that is nested between the first and second wafer transport modules and third and fourth process modules. The first and second wafer transport modules and the buffer module define a continuous controlled environment.

公开(公告)号：US09972478B2

公开(公告)日：2018-05-15

申请号：US15268472

申请日：2016-09-16

Applicant: Lam Research Corporation

Inventor： Joydeep Guha ,  John Daugherty ,  Vahid Vahedi ,  Richard Alan Gottscho

IPC: G01L21/30 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  B81C2201/0138 ,  H01J37/32082 ,  H01J37/32926 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253

Abstract: Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector. The method further includes transforming the compensation vector into adjustments to the settings for the tuning knobs and then applying the adjustment to the tuning knobs of the plasma reactor.

公开(公告)号：US09947558B2

公开(公告)日：2018-04-17

申请号：US15235660

申请日：2016-08-12

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Robin Koshy ,  John Daugherty ,  Satish Srinivasan

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/67069 ,  H01L21/02123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67086 ,  H01L21/6831

Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.

公开(公告)号：US09580360B2

公开(公告)日：2017-02-28

申请号：US14676180

申请日：2015-04-01

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Iqbal Shareef ,  Mike Ingamells

IPC: C04B35/622 ,  H01J37/32 ,  C04B35/66 ,  C04B35/64 ,  B28B1/00 ,  B32B18/00 ,  C04B35/00 ,  C23C16/455 ,  B33Y10/00 ,  B33Y30/00

CPC classification number: C04B35/622 ,  B28B1/001 ,  B32B18/00 ,  B33Y10/00 ,  B33Y30/00 ,  C04B35/00 ,  C04B35/01 ,  C04B35/111 ,  C04B35/14 ,  C04B35/46 ,  C04B35/486 ,  C04B35/50 ,  C04B35/515 ,  C04B35/563 ,  C04B35/565 ,  C04B35/581 ,  C04B35/584 ,  C04B35/64 ,  C04B35/66 ,  C23C16/45561 ,  C23C16/45563 ,  H01J37/3244

Abstract: A method of making a monolithic ceramic component of a gas delivery system of a semiconductor substrate processing apparatus wherein the gas delivery system is configured to supply process gas to a gas distribution member disposed downstream thereof. The gas distribution member is configured to supply the process gas to a processing region of a vacuum chamber of the apparatus, wherein the processing region is disposed above an upper surface of a semiconductor substrate to be processed. The method comprises preparing a green compact of ceramic material. The green compact of ceramic material is formed into a form of a desired monolithic ceramic component of the gas delivery system. The formed green compact of ceramic material is fired to form the monolithic ceramic component of the gas delivery system.

Abstract translation: 一种制造半导体基板处理装置的气体输送系统的整体式陶瓷部件的方法，其中所述气体输送系统构造成将处理气体供给到设置在其下游的气体分配部件。 气体分配构件被配置为将处理气体供应到设备的真空室的处理区域，其中处理区域设置在待处理的半导体衬底的上表面上方。 该方法包括制备陶瓷材料的压坯。 陶瓷材料的生坯被形成为气体输送系统所需的整体式陶瓷部件的形式。 将形成的陶瓷材料的压坯烧成以形成气体输送系统的整体式陶瓷部件。

公开(公告)号：US20150187615A1

公开(公告)日：2015-07-02

申请号：US14578979

申请日：2014-12-22

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Anthony Amadio ,  Tom Stevenson ,  Lin Xu ,  John Michael Kerns ,  Robert Griffith O'Neill ,  Sonia Castillo

IPC: H01L21/67 ,  H01L21/02 ,  C25D11/02 ,  H01L21/3065 ,  C23C24/04 ,  C23C22/73

CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/50 ,  C23C24/04 ,  C25D11/04 ,  C25D11/38 ,  H01J37/321 ,  H01J37/32669

Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

Abstract translation: 用于处理半导体部件的半导体等离子体处理装置包括等离子体处理室，与等离子体处理室流体连通的处理气体源，用于将处理气体供应到等离子体处理室中; RF能量源，其适于将工艺气体激励成 等离子体处理室中的等离子体状态，以及用于从等离子体处理室排出处理气体的真空端口。 半导体等离子体处理装置还包括至少一种组分，其中组分具有约70,000或更大的相对磁导率的本体和在体表面上的冷喷涂的导电和非磁性涂层，其中涂层具有更大的厚度 比在等离子体处理期间配置为流过其中的RF电流的趋肤深度。

公开(公告)号：US12249490B2

公开(公告)日：2025-03-11

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Douglas Detert ,  John Daugherty ,  Pankaj Hazarika ,  Satish Srinivasan ,  Nash W. Anderson ,  John Michael Kerns ,  Robin Koshy ,  David Joseph Wetzel ,  Lei Liu ,  Eric A. Pape

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US12129569B2

公开(公告)日：2024-10-29

申请号：US17795509

申请日：2021-02-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  David Joseph Wetzel ,  John Daugherty ,  Hong Shih ,  Satish Srinivasan ,  Yuanping Song ,  Johnny Pham ,  Yiwei Song ,  Christopher Kimball

IPC: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32 ,  H01L21/683

CPC classification number: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12667 ,  Y10T428/12806

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.

公开(公告)号：US11764086B2

公开(公告)日：2023-09-19

申请号：US17860736

申请日：2022-07-08

Applicant: LAM RESEARCH CORPORATION

Inventor： David Trussell ,  John Daugherty ,  Christopher J. Pena ,  Michael C. Kellogg ,  Klay Kunkel ,  Richard H. Gould

IPC: H01L21/67

CPC classification number: H01L21/67196 ,  H01L21/6719 ,  H01L21/67161

Abstract: A substrate processing system configured to process substrates includes a substrate transport assembly that encloses a controlled environment defined within a continuous transport volume and at least two process modules coupled to the substrate transport assembly. The substrate transport assembly is configured to transport substrates to and from the at least two process modules through the continuous transport volume. At least two gas boxes are configured to deliver gas mixtures to the at least two process modules. An exhaust duct configured to selectively evacuate the at least two process modules through the at least two gas boxes. Surfaces of the at least two gas boxes include perforations configured to allow gases to flow from the at least two gas boxes into the exhaust duct.

公开(公告)号：US09929028B2

公开(公告)日：2018-03-27

申请号：US15296547

申请日：2016-10-18

Applicant: Lam Research Corporation

Inventor： David Trussell ,  John Daugherty ,  Michael Kellogg ,  Christopher Pena ,  Richard Gould ,  Klay Kunkel

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67173 ,  H01L21/67155 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67706 ,  H01L21/67727 ,  H01L21/67733 ,  H01L21/67745

Abstract: A system for processing substrates is provided, comprising: a wafer transport assembly that is configured to transport wafers to and from one or more process modules, the wafer transport assembly having at least one wafer transport module, wherein lateral sides of the at least one wafer transport module are configured to couple to the one or more process modules; a service floor defined below the wafer transport assembly, the service floor being defined at a height that is less than a height of a fabrication facility floor in which the system is disposed.

公开(公告)号：US09546432B2

公开(公告)日：2017-01-17

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: C25D11/04 ,  C25D11/02 ,  H01L21/3065 ,  H01L21/02 ,  C25D11/16 ,  C25D11/12 ,  C23C28/00 ,  C23C24/00 ,  H01L21/67 ,  C23C16/44 ,  H01L21/78

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。