公开(公告)号：US06569252B1

公开(公告)日：2003-05-27

申请号：US09609283

申请日：2000-06-30

Applicant: Krishna G. Sachdev ,  James N. Humenik ,  Chon Cheong Lei ,  Glenn A. Pomerantz

Inventor： Krishna G. Sachdev ,  James N. Humenik ,  Chon Cheong Lei ,  Glenn A. Pomerantz

IPC: C23G502

CPC classification number: H01L21/02063 ,  B23K35/025 ,  C11D7/263 ,  C11D11/0047 ,  C11D11/007 ,  C23G5/032 ,  H05K3/1233 ,  H05K3/26 ,  Y10S134/902

Abstract: A process of cleaning of objects that relate to semiconductor fabrication processes, such as, for example, conductive paste screening in the production of multilayer ceramic substrates and composite solder paste by stencil printing in electronic circuit assembly. Specifically, the process removes a metal/polymer composite paste from screening masks and associated paste making and processing equipment used in printing conductive metal pattern onto ceramic green sheet in the fabrication of semiconductor packaging substrates. The process also cleans solder paste residue from stencil printing equipment used in electronic module assembly surface mount technology for SMT discretes, solder column attachment, and BGA (Ball Grid Array) attachment on ceramic chip carrier or for screening solder paste onto printed circuit board. More particularly, paste residue is cleaned from metal, ceramic, and plastic substrates by a non-alkaline semi-aqueous cleaning method employing high boiling propylene glycol alkyl ether or mixtures of propylene glycol alkyl ether and propylene glycol solvents.

Abstract translation: 清洁与半导体制造工艺有关的物体的过程，例如通过在电子电路组件中的模版印刷生产多层陶瓷衬底中的导电糊料和复合焊膏。 具体地说，该方法在半导体封装衬底的制造中，将金属/聚合物复合糊剂从掩模掩模和用于印刷导电金属图案的相关糊剂制造和加工设备移除到陶瓷生片上。 该工艺还可以将陶瓷芯片载体上用于SMT离散，焊料柱附件和BGA（球栅阵列）附件的电子模块组件表面贴装技术中使用的模版印刷设备的焊膏残留物清理或用于将焊膏屏蔽到印刷电路板上。 更具体地，通过使用高沸点丙二醇烷基醚或丙二醇烷基醚和丙二醇溶剂的混合物的非碱性半水洗涤方法，从金属，陶瓷和塑料基材中清除糊状残余物。

公开(公告)号：US06528145B1

公开(公告)日：2003-03-04

申请号：US09606359

申请日：2000-06-29

Applicant: Daniel George Berger ,  Shaji Farooq ,  Lester Wynn Herron ,  James N. Humenik ,  John Ulrich Knickerbocker ,  Robert William Pasco ,  Charles H. Perry ,  Krishna G. Sachdev

Inventor： Daniel George Berger ,  Shaji Farooq ,  Lester Wynn Herron ,  James N. Humenik ,  John Ulrich Knickerbocker ,  Robert William Pasco ,  Charles H. Perry ,  Krishna G. Sachdev

IPC: G02B600

CPC classification number: H05K1/0373 ,  H01L21/4857 ,  H01L23/49894 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/4611 ,  H05K2201/0129 ,  H05K2201/0141 ,  H05K2201/015 ,  H05K2201/0154 ,  H05K2201/0209 ,  H05K2201/0212 ,  H05K2201/068 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/24479 ,  Y10T428/24917 ,  Y10T428/24942 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/251 ,  Y10T428/254 ,  Y10T428/259 ,  H01L2924/00

Abstract: A composite electronic and/or optical substrate including polymeric and ceramic material wherein the composite substrate has a dielectric constant less than 4 and a coefficient of thermal expansion of 8 to 14 ppm/°C. at 100° C. The composite substrate may be either ceramic-filled polymeric material or polymer-filled ceramic material.

Abstract translation: 包括聚合物和陶瓷材料的复合电子和/或光学基底，其中复合基底具有小于4的介电常数和8-14ppm /℃的热膨胀系数。 在100℃下。复合衬底可以是陶瓷填充的聚合材料或聚合物填充的陶瓷材料。

公开(公告)号：US06277799B1

公开(公告)日：2001-08-21

申请号：US09344886

申请日：1999-06-25

Applicant: Krishna G. Sachdev ,  James N. Humenik ,  John U. Knickerbocker ,  Glenn A. Pomerantz

Inventor： Krishna G. Sachdev ,  James N. Humenik ,  John U. Knickerbocker ,  Glenn A. Pomerantz

IPC: C11D172

CPC classification number: C11D11/0047 ,  C11D1/008 ,  C11D1/02 ,  C11D1/24 ,  C11D1/29 ,  C11D1/66 ,  C11D1/662 ,  C11D1/72 ,  C11D1/88 ,  C11D1/90 ,  C11D3/2086 ,  H05K3/1216 ,  H05K3/26

Abstract: This invention relates to an aqueous cleaning method for removal of metal-organic composite paste residue from the surface of components, such as, screening masks, associated paste screening equipment, substrates, to name a few. The invention is particularly concerned with aqueous alkaline cleaning solutions comprising alkali metal salt and/or quaternary ammonium salt of an organic acid preferably &agr;-hydroxy carboxylic acid in the presence of excess alkali and optionally a surface active agent for use in cleaning components, such as, screening masks, associated screening equipment, substrates, etc., which are used in the production of electronic components.

Abstract translation: 本发明涉及从组分表面除去金属 - 有机复合糊状残留物的水性清洗方法，例如筛选掩模，相关的糊状物筛选设备，底物等等。 本发明特别涉及含有碱金属盐和/或季铵盐的含水碱性清洗溶液，所述碱性金属盐和/或有机酸优选为α-羟基羧酸的季铵盐，所述碱性金属盐和/或季铵盐在过量碱和任选的表面活性剂存在下用于清洁组分，例如 ，筛选掩模，相关筛选设备，基材等，用于生产电子元件。

公开(公告)号：US6032683A

公开(公告)日：2000-03-07

申请号：US258970

申请日：1999-02-26

Applicant: Jon A. Casey ,  Michael E. Cropp ,  Donald W. DiAngelo ,  John F. Harmuth ,  John U. Knickerbocker ,  David C. Long ,  Daniel S. Mackin ,  Glenn A. Pomerantz ,  Krishna G. Sachdev ,  David E. Speed ,  Candace A. Sullivan ,  Robert J. Sullivan ,  Bruce E. Tripp ,  James C. Utter

Inventor： Jon A. Casey ,  Michael E. Cropp ,  Donald W. DiAngelo ,  John F. Harmuth ,  John U. Knickerbocker ,  David C. Long ,  Daniel S. Mackin ,  Glenn A. Pomerantz ,  Krishna G. Sachdev ,  David E. Speed ,  Candace A. Sullivan ,  Robert J. Sullivan ,  Bruce E. Tripp ,  James C. Utter

IPC: B08B3/02 ,  B41F35/00 ,  G03F1/82 ,  G03F7/12 ,  G03F7/42 ,  H01L21/00 ,  H05K3/12 ,  H05K3/26 ,  B08B3/00

CPC classification number: H01L21/67028 ,  B08B3/02 ,  B41F35/005 ,  G03F1/82 ,  G03F7/425 ,  B41P2235/26 ,  B41P2235/50 ,  G03F7/12 ,  H05K3/1216 ,  H05K3/26

Abstract: A cleaning method and related apparatus for cleaning semiconductor screening masks using an aqueous alkali detergent solution applied under high pressure simultaneously from both sides of the mask, followed by a drying step that uses air knives to blow off the mask surface any residual cleaner solution.

Abstract translation: 一种清洁方法和相关设备，用于使用在面罩的两侧同时施加的高压下的碱性洗涤剂水溶液来清洗半导体掩模掩模，随后进行干燥步骤，其使用空气刀将掩模表面吹出任何残余的清洁剂溶液。

公开(公告)号：US5916374A

公开(公告)日：1999-06-29

申请号：US21046

申请日：1998-02-09

Applicant: Jon A. Casey ,  Michael E. Cropp ,  Donald W. DiAngelo ,  John F. Harmuth ,  John U. Knickerbocker ,  David C. Long ,  Daniel S. Mackin ,  Glenn A. Pomerantz ,  Krishna G. Sachdev ,  David E. Speed ,  Candace A. Sullivan ,  Robert J. Sullivan ,  Bruce E. Tripp ,  James C. Utter

Inventor： Jon A. Casey ,  Michael E. Cropp ,  Donald W. DiAngelo ,  John F. Harmuth ,  John U. Knickerbocker ,  David C. Long ,  Daniel S. Mackin ,  Glenn A. Pomerantz ,  Krishna G. Sachdev ,  David E. Speed ,  Candace A. Sullivan ,  Robert J. Sullivan ,  Bruce E. Tripp ,  James C. Utter

IPC: B08B3/02 ,  B41F35/00 ,  G03F1/82 ,  G03F7/12 ,  G03F7/42 ,  H01L21/00 ,  H05K3/12 ,  H05K3/26 ,  B08B3/04

CPC classification number: H01L21/67028 ,  B08B3/02 ,  B41F35/005 ,  G03F1/82 ,  G03F7/425 ,  B41P2235/26 ,  B41P2235/50 ,  G03F7/12 ,  H05K3/1216 ,  H05K3/26

Abstract: A cleaning method and related apparatus for cleaning semiconductor screening masks using an aqueous alkali detergent solution applied under high pressure simultaneously from both sides of the mask, followed by a drying step that uses air knives to blow off the mask surface any residual cleaner solution.

Abstract translation: 一种清洁方法和相关设备，用于使用在面罩的两侧同时施加的高压下的碱性洗涤剂水溶液来清洗半导体掩模掩模，随后进行干燥步骤，其使用空气刀将掩模表面吹出任何残余的清洁剂溶液。

公开(公告)号：US5399462A

公开(公告)日：1995-03-21

申请号：US274571

申请日：1994-07-13

Applicant: Krishna G. Sachdev ,  Premlatha Jagannathan ,  Robert N. Lang ,  Harbans S. Sachdev ,  Ratnam Sooriyakumaran ,  Joel R. Whitaker

Inventor： Krishna G. Sachdev ,  Premlatha Jagannathan ,  Robert N. Lang ,  Harbans S. Sachdev ,  Ratnam Sooriyakumaran ,  Joel R. Whitaker

IPC: G03F7/022 ,  C08G77/388 ,  G03F7/027 ,  G03F7/037 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  H01L21/027 ,  H01L21/30 ,  G03F7/30 ,  G03F7/023 ,  G03F7/36

CPC classification number: C08G77/388 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094

Abstract: A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.

Abstract translation: 提供了一种在双层抗蚀剂组合物中形成具有小于半微米宽度的微光刻浮雕图像的方法。 抗蚀剂组合物包含具有高的光密度和类似于覆盖抗蚀剂的折射率的折射率的单一组分，含硅光可成像层和聚合物底层。 该方法提供了使用i线（365nm）或深紫外（170至300nm）光源在顶层中形成浮雕图像，随后将浮雕图像的O2 RIE转移到聚合物底层中。

公开(公告)号：US4692205A

公开(公告)日：1987-09-08

申请号：US824893

申请日：1986-01-31

Applicant: Krishna G. Sachdev ,  Ranee W. Kwong ,  Mani R. Gupta ,  Mark S. Chace ,  Harbans S. Sachdev

Inventor： Krishna G. Sachdev ,  Ranee W. Kwong ,  Mani R. Gupta ,  Mark S. Chace ,  Harbans S. Sachdev

IPC: H01L21/302 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  B29C37/00

CPC classification number: G03F7/094 ,  G03F7/0757 ,  H01L21/0272 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/7688 ,  H01L21/76885 ,  Y10S428/901 ,  Y10S438/95 ,  Y10S438/97 ,  Y10T29/49155 ,  Y10T428/12396 ,  Y10T428/12528 ,  Y10T428/31721

Abstract: The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.

Abstract translation: 描述了在制造多层金属结构中使用含硅聚酰亚胺作为金属剥离工艺中的氧蚀刻阻挡层和作为氧蚀刻停止。 实际上，将剥离层施加在基底上，随后是一层含硅聚酰亚胺和一层光致抗蚀剂。 光致抗蚀剂被光刻图案化，并且使用CF 4 / O 2气体混合物通过反应离子蚀刻将显影的图像转移到含硅聚酰亚胺层中。 在使用氧的反应离子蚀刻工艺中将图案转移到剥离层。 随后的毯式金属蒸发，随后去除剥离模板，导致基材上所需的金属图案。 在替代实施例中，含硅聚酰亚胺可以掺杂光活性化合物，减少了在顶部上分离的光致抗蚀剂成像层的需要。

公开(公告)号：US4678701A

公开(公告)日：1987-07-07

申请号：US793525

申请日：1985-10-31

Applicant: Keith S. Pennington ,  Ali Afzali-Ardakani ,  Krishna G. Sachdev

Inventor： Keith S. Pennington ,  Ali Afzali-Ardakani ,  Krishna G. Sachdev

IPC: B41J31/00 ,  B41J31/05 ,  B41M5/26 ,  B41M5/382

CPC classification number: B41M5/3825 ,  B41J31/05 ,  Y10S428/913 ,  Y10S428/914 ,  Y10T428/24917 ,  Y10T428/24942 ,  Y10T428/25 ,  Y10T428/261 ,  Y10T428/31 ,  Y10T428/31507 ,  Y10T428/3154 ,  Y10T428/31544

Abstract: An improved resistive ribbon for resistive thermal transfer printing is described in which the resistive layer of the ribbon has enhanced thermal and mechanical properties. The ribbon is a multi-layer ribbon including a resistive layer, an electrical current return layer, and an ink layer. The resistive layer has an additive therein which phase separates and concentrates in a thin surface region near the interface of the resistive layer and the current return layer. This thin region has superior thermal and mechanical properties, and protects the remainder of the resistive layer during the printing operation, without adversely affecting the mechanical, electrical, and thermal properties of the overall resistive layer. These additives are those which will form a polymer having a sufficiently high dissociation temperature to withstand the adverse effects of heat build-up at the interface. Suitable additives include graphite fluorides, fluorocarbon resins such as Teflon.RTM., and CeF.sub.4.

Abstract translation: 描述了用于电阻热转移印刷的改进的电阻带，其中带的电阻层具有增强的热和机械性能。 带是包括电阻层，电流返回层和油墨层的多层带状物。 电阻层具有添加剂，其中相分离并集中在电阻层和电流返回层的界面附近的薄表面区域中。 该薄区域具有优异的热和机械性能，并且在打印操作期间保护电阻层的其余部分，而不会不利地影响整个电阻层的机械，电气和热性能。 这些添加剂是形成具有足够高解离温度的聚合物的那些添加剂，以承受界面处的热积累的不利影响。 合适的添加剂包括石墨氟化物，氟碳树脂如Teflon TM和CeF 4。

公开(公告)号：US4567490A

公开(公告)日：1986-01-28

申请号：US567300

申请日：1983-12-30

Applicant: Ali Afzali-Ardakani ,  Mitchell S. Cohen ,  Keith S. Pennington ,  Krishna G. Sachdev

Inventor： Ali Afzali-Ardakani ,  Mitchell S. Cohen ,  Keith S. Pennington ,  Krishna G. Sachdev

IPC: B41M5/24 ,  B41N1/14 ,  H05K3/00 ,  H05K3/08 ,  H05K3/28 ,  G01D15/34 ,  B05D5/12 ,  B32B5/16 ,  G03C5/24

CPC classification number: B41M5/245 ,  H05K3/0002 ,  H05K3/08 ,  Y10T428/25 ,  Y10T428/254 ,  Y10T428/31692

Abstract: Electroerosion recording materials are provided with a surface lubricant film of particulate lubricating nonconductive graphite fluoride and optional conductive materials in a polymeric binder. The lubricating agents reduce stylus scratching of the conductive layer during electroerosion printing, improve contrast, provide a beneficial coating on the writing electrode or stylus and improve the handling and writing characteristics of the recording material. The lubricating agents/polymer films are especially useful (1) where the substrate of the recording material is light transmissive and, after the electroerosion process, the resulting product is suitable for direct-negative applications and (2) where direct offset masters are produced by removal of noneroded lubricant film.

Abstract translation: 电解记录材料在聚合物粘合剂中设置有颗粒润滑非导电氟化石墨和可选导电材料的表面润滑剂膜。 润滑剂在电腐蚀印刷期间降低导电层的触针刮擦，改善对比度，在书写电极或触控笔上提供有益的涂层，并提高记录材料的处理和书写特性。 润滑剂/聚合物膜是特别有用的（1）其中记录材料的基底是透光的，并且在电腐蚀过程之后，所得到的产品适用于直接阴性应用，和（2）其中直接偏移主体由 去除非润滑油膜。

公开(公告)号：US4525722A

公开(公告)日：1985-06-25

申请号：US582694

申请日：1984-02-23

Applicant: Krishna G. Sachdev ,  Harbans S. Sachdev ,  Ari Aviram ,  Mark A. Wizner

Inventor： Krishna G. Sachdev ,  Harbans S. Sachdev ,  Ari Aviram ,  Mark A. Wizner

IPC: B41M5/392 ,  B41J31/00 ,  B41J31/02 ,  B41M5/26 ,  G01D15/10

CPC classification number: B41M5/392 ,  Y10S428/913 ,  Y10S428/914 ,  Y10S430/146

Abstract: Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and specifically hydrazone derivatives which are substantially colorless, and have a molecular weight in the approximate range 150-650.

Abstract translation: 在热转印中提供化学热放大，其中通过放热反应提供熔融和将油墨从带中的固体可熔层转移到接收介质所需的一些热。 这种化学反应是由于位于油墨层中的放热材料或油墨支承带的另一层。 放热反应减少必须通过电气或电磁波施加的输入功率的量。 合适的放热材料的实例是在油墨的操作温度范围内提供热量，特别是基本上无色的分子量为150-650的腙衍生物。