Abstract:
A semiconductor device comprises a carrier. Further, the semiconductor devices comprises a semiconductor chip comprising a first main surface and a second main surface opposite to the first main surface, wherein a first electrode is arranged on the first main surface and the semiconductor chip is mounted on the carrier with the second main surface facing the carrier. Further, an encapsulation body embedding the semiconductor chip is provided. The semiconductor device further comprises a contact clip, wherein the contact clip is an integral part having a bond portion bonded to the first electrode and having a terminal portion forming an external terminal of the semiconductor device.
Abstract:
A chip package device includes an electrically conducting chip carrier, at least one semiconductor chip attached to the electrically conducting chip carrier, and an insulating laminate structure embedding the chip carrier, the at least one semiconductor chip and a passive electronic device. The passive electronic device includes a first structured electrically conducting layer, the first structured electrically conducting layer extending over a surface of the laminate structure.
Abstract:
A embedded integrated circuit package is provided, the embedded integrated circuit package including: at least one chip arranged over a chip carrier, the at least one chip including a plurality of chip contact pads; encapsulation material formed over the chip carrier and at least partially surrounding the at least one chip; a plurality of electrical interconnects formed through the encapsulation material, wherein each electrical interconnect is electrically connected to a chip contact pad; and a structure formed between the electrical interconnects of the embedded integrated circuit package, wherein the structure increases the creepage resistance between the electrical interconnects.
Abstract:
A semiconductor device comprises a carrier. Further, the semiconductor devices comprises a semiconductor chip comprising a first main surface and a second main surface opposite to the first main surface, wherein a first electrode is arranged on the first main surface and the semiconductor chip is mounted on the carrier with the second main surface facing the carrier. Further, an encapsulation body embedding the semiconductor chip is provided. The semiconductor device further comprises a contact clip, wherein the contact clip is an integral part having a bond portion bonded to the first electrode and having a terminal portion forming an external terminal of the semiconductor device.
Abstract:
An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.
Abstract:
A chip arrangement is provided, the chip arrangement, including a carrier; at least one chip electrically connected to a carrier top side; an encapsulation material at least partially surrounding the at least one chip and the carrier top side, wherein the encapsulation material is formed on one or more lateral sides of the carrier; and a ceramic material disposed on a carrier bottom side, and on at least one side of the encapsulation material.
Abstract:
A carrier and a semiconductor chip are provided. A connection layer is applied to a first main face of the semiconductor chip. The connection layer includes a plurality of depressions. A filler is applied to the connection layer or to the carrier. The semiconductor chip is attached to the carrier so that the connection layer is disposed between the semiconductor chip and the carrier. The semiconductor chip is affixed to the carrier.
Abstract:
A method of manufacturing a chip package is provided. The method may include electrically contacting at least one first chip, the first chip including a first side and a second side opposite the first side, with its second side to an electrically conductive carrier. An insulating layer is formed over at least a part of the electrically conductive carrier and over at least a part of the first side of the chip. At least one second chip is arranged over the insulating layer. An encapsulating material is formed over the first chip and the second chip. Electrical contacts are formed through the encapsulation material to at least one contact of the at least one first chip and to at least one contact of the at least one second chip.
Abstract:
A embedded integrated circuit package is provided, the embedded integrated circuit package including: at least one chip arranged over a chip carrier, the at least one chip including a plurality of chip contact pads; encapsulation material formed over the chip carrier and at least partially surrounding the at least one chip; a plurality of electrical interconnects formed through the encapsulation material, wherein each electrical interconnect is electrically connected to a chip contact pad; and a structure formed between the electrical interconnects of the embedded integrated circuit package, wherein the structure increases the creepage resistance between the electrical interconnects.
Abstract:
An electronic component includes an electrically conductive carrier. The electrically conductive carrier includes a carrier surface and a semiconductor chip includes a chip surface. One or both of the carrier surface and the chip surface include a non-planar structure. The chip is attached to the carrier with the chip surface facing towards the carrier surface so that a gap is provided between the chip surface and the carrier surface due to the non-planar structure of one or both of the carrier surface and the first chip surface. The electronic component further includes a first galvanically deposited metallic layer situated in the gap.