公开(公告)号：US20150194306A1

公开(公告)日：2015-07-09

申请号：US14661103

申请日：2015-03-18

Applicant: Hitachi Kokusai Electric Inc.

Inventor： Yukitomo HIROCHI ,  Kazuyuki TOYODA ,  Kazuhiro MORIMITSU ,  Taketoshi SATO ,  Tetsuo YAMAMOTO

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02186 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/67017

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract translation: 提供了一种通过将等离子体单元等离子体化的第一处理气体和第二处理气体交给处理容器来处理衬底来制造半导体器件的方法。 该方法包括：开始供应电力以将第二处理气体等离子化至等离子体单元，而不向第二处理气体供应到等离子体单元; 以及供给所述等离子体单元的电力开始供给所述第二处理气体。

公开(公告)号：US09053909B2

公开(公告)日：2015-06-09

申请号：US12547648

申请日：2009-08-26

Applicant: Hitoshi Kato ,  Yasushi Takeuchi ,  Shigehiro Ushikubo ,  Hiroyuki Kikuchi

Inventor： Hitoshi Kato ,  Yasushi Takeuchi ,  Shigehiro Ushikubo ,  Hiroyuki Kikuchi

IPC: C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  C23C16/455 ,  C23C16/452 ,  C23C16/458 ,  C23C16/06 ,  C23C16/22 ,  H01J1/00

CPC classification number: H01J37/32559 ,  C23C16/452 ,  C23C16/45517 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5093 ,  H01J1/00 ,  H01J37/3244 ,  H01J37/32449

Abstract: An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.

Abstract translation: 活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

公开(公告)号：US09045824B2

公开(公告)日：2015-06-02

申请号：US13748458

申请日：2013-01-23

Applicant: Kenneth Scott Alexander Butcher

Inventor： Kenneth Scott Alexander Butcher

IPC: H01L21/31 ,  H01L21/469 ,  C23C16/452 ,  C23C16/30 ,  C30B25/10 ,  C30B25/16 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/452 ,  C23C16/303 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  H01J37/32357 ,  H01J2237/3321

Abstract: A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques.

Abstract translation: 一种使用等离子体增强化学气相沉积法生产薄膜的方法，包括以下步骤：当基底区域中基于等离子体的阴离子种类最多具有相对较低的通量时，将阳离子种类提供给基底区域，并且提供等离子体 当衬底区域中阳离子种类最多具有相对较低的通量时，基底阴离子物质与基底区域相关。 这使得能够在PECVD和/或基于RPECVD的膜生长系统中及时分离出气态反应物的分离，这为这些基于等离子体的膜生长技术的灰尘颗粒的形成提供了显着的降低。

公开(公告)号：US20150125629A1

公开(公告)日：2015-05-07

申请号：US14526811

申请日：2014-10-29

Applicant: ASM IP Holding B.V.

Inventor： Young Hoon KIM ,  Dae Youn Kim ,  Sang Wook Lee

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/513 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/30

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/402 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0228

Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.

Abstract translation: 沉积薄膜的方法包括：首先重复第一气体供应循环，第一气体供应循环包括将源气体供应到反应空间; 供应第一等离子体，同时向反应空间供应反应气体; 重复第二次气体供给循环第二次，第二气体供应循环包括将源气体供应到反应空间; 以及在将所述反应气体供应到所述反应空间的同时供给第二等离子体，其中所述第一等离子体的供给包括供给远程等离子体，所述第二等离子体的供给包括供给直接等离子体

公开(公告)号：US08946061B2

公开(公告)日：2015-02-03

申请号：US13597146

申请日：2012-08-28

Applicant: Blake Darby ,  Ludovic Godet ,  Xianfeng Lu

Inventor： Blake Darby ,  Ludovic Godet ,  Xianfeng Lu

IPC: H01L21/00 ,  C23C16/24 ,  C23C16/28 ,  C23C16/452 ,  H01M4/04 ,  H01M4/1395

CPC classification number: C23C16/24 ,  C23C16/28 ,  C23C16/452 ,  H01M4/0421 ,  H01M4/1395 ,  Y02E60/122

Abstract: In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.

Abstract translation: 在一个实施例中，在工件上制造多孔半导体膜的方法包括在等离子体室的等离子体中产生包括锗前驱体离子和硅前体离子中的一种或多种的半导体前体离子，其中半导体前体离子可操作 以在工件上形成多孔膜。 该方法还包括在半角度范围内将半导体前体离子引导到工件。

公开(公告)号：US20150031167A1

公开(公告)日：2015-01-29

申请号：US14269175

申请日：2014-05-04

Applicant: Samsung Display Co., Ltd.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Sung-Chul KIM ,  Sang-Hyuk HONG ,  Choel-Min JANG

IPC: H01L51/52 ,  H01L21/02 ,  H01L21/285 ,  H01L51/56

CPC classification number: H01L21/28506 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02274 ,  H01L51/001 ,  H01L51/56

Abstract: A deposition apparatus for performing a deposition process on a substrate includes: an injection unit including a plasma generating member which receives a raw material gas and converts the raw material gas to a deposition source material in a radical form; and a plasma processor disposed adjacent to the injection unit and facing a side of the injection unit, wherein the plasma processor performs a plasma process in a direction facing the substrate.

Abstract translation: 用于在基板上进行沉积处理的沉积装置包括：注入单元，其包括等离子体产生元件，该等离子体产生元件接纳原料气体，并将原料气体以基本形式转化为沉积源材料; 以及等离子体处理器，其与所述注入单元相邻并且面向所述注入单元的一侧，其中所述等离子体处理器在面向所述基板的方向上执行等离子体处理。

公开(公告)号：US20150007772A1

公开(公告)日：2015-01-08

申请号：US14312137

申请日：2014-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei FUKUSHIMA ,  Hiroyuki MATSUURA ,  Yutaka MOTOYAMA ,  Koichi SHIMADA ,  Takeshi ANDO

IPC: C23C16/509

CPC classification number: C23C16/507 ,  C23C16/452 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32779

Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

Abstract translation: 基板处理装置包括：被配置为被抽真空的处理容器; 保持单元，其构造成保持多个基板并插入到处理容器中或与处理容器分离; 气体供给单元，其构造成将气体供给到所述处理容器内; 由等离子体隔壁分隔和形成的等离子体产生箱; 电感耦合电极，位于等离子体发生箱的沿其长度方向的外侧壁; 高频电源，通过馈电线连接到电感耦合电极; 位于等离子体生成箱的外部，处理容器与电感耦合电极之间的配置在等离子体生成箱的外侧壁附近，或至少部分地与外侧壁接触的接地电极。

公开(公告)号：US08910590B2

公开(公告)日：2014-12-16

申请号：US13201280

申请日：2010-02-12

Applicant: Conor Nicholas Martin ,  Guy Reynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick Po-Tsang Chen ,  Marie-Pierre Francoise Wintrebert Ep Fouquet

Inventor： Conor Nicholas Martin ,  Guy Reynolds ,  Piotr Glowacki ,  Satyanarayan Barik ,  Patrick Po-Tsang Chen ,  Marie-Pierre Francoise Wintrebert Ep Fouquet

IPC: H01J37/32 ,  H01L21/28 ,  C23C16/30 ,  C23C16/452 ,  C23C16/455 ,  C30B29/40 ,  H01L21/02 ,  C30B25/10 ,  C30B25/16

CPC classification number: H01J37/32449 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  C30B29/403 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0262 ,  Y10T137/8593

Abstract: An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

Abstract translation: 一种用于在基板上沉积III族金属氮化物膜的装置，该装置包括用于从氮源产生氮等离子体的等离子体发生器，其中使包含III族金属的试剂与衍生的反应性氮物质反应的反应室 从氮等离子体中沉积第III族金属氮化物到基板上，等离子体入口以促进氮等离子体从等离子体发生器通入反应室，以及具有一个或多个流动通道以使氮等离子体通过的挡板 。 挡板位于等离子体入口和基板之间，并且防止等离子体入口和基板之间的氮等离子体的直通通道。

公开(公告)号：US20140302688A1

公开(公告)日：2014-10-09

申请号：US13934863

申请日：2013-07-03

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02216 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274

Abstract: Methods are described for forming a dielectric layer on a patterned substrate. The methods may include combining a silicon-and-carbon-containing precursor and a radical oxygen precursor in a plasma free substrate processing region within a chemical vapor deposition chamber. The silicon-and-carbon-containing precursor and the radical oxygen precursor react in to deposit a flowable silicon-carbon-oxygen layer on the patterned substrate. The resulting film possesses a low wet etch rate ratio relative to thermal silicon oxide and other standard dielectrics.

Abstract translation: 描述了在图案化衬底上形成电介质层的方法。 所述方法可以包括在化学气相沉积室内的无等离子体衬底处理区域中组合含硅和碳的前体和自由基氧前体。 含硅和碳的前体和自由基氧前体反应以在图案化的衬底上沉积可流动的硅 - 碳 - 氧层。 所得膜相对于热氧化硅和其它标准电介质具有低的湿蚀刻速率比。

公开(公告)号：US20140283746A1

公开(公告)日：2014-09-25

申请号：US13915573

申请日：2013-06-11

Applicant: Charm Engineering Co., Ltd.

Inventor： Young-Soo SEO ,  Young-Ki HAN ,  Jun-Hyeok LEE ,  Woo-Sik SHIN ,  Noh-Sun MYOUNG

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/505 ,  C23C16/509 ,  C23C16/513 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32816

Abstract: Provided are a liner assembly and a substrate processing apparatus including the liner assembly. The liner assembly includes a side liner, an intermediate liner, and a lower liner. The side liner has a cylindrical shape with upper and lower portions opened. The intermediate liner is disposed under the side liner and has a plurality of first holes passing therethrough in a vertical direction. The lower liner is disposed under the intermediate liner. Here, the plurality of first holes are formed in different sizes and numbers in a plurality of regions.

Abstract translation: 提供了一种衬套组件和包括衬套组件的衬底处理设备。 衬套组件包括侧衬，中间衬垫和下衬垫。 侧衬具有上部和下部打开的圆柱形形状。 中间衬垫设置在侧衬下方，并且具有沿垂直方向穿过其中的多个第一孔。 下衬套设置在中间衬垫下方。 这里，多个第一孔在多个区域中形成为不同的尺寸和数量。