公开(公告)号：US09847212B2

公开(公告)日：2017-12-19

申请号：US14341450

申请日：2014-07-25

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01Q21/00 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01P3/12 ,  H01P3/127

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

公开(公告)号：US09847205B2

公开(公告)日：2017-12-19

申请号：US14903747

申请日：2014-06-26

Applicant: Phoenix Nuclear Labs LLC

Inventor： Joseph D. Sherman ,  Evan R. Sengbusch ,  Ross F. Radel ,  Arne V. Kobernik ,  Tye T. Gribb ,  Preston J. Barrows ,  Christopher M. Seyfert ,  Logan D. Campbell ,  Daniel J. Swanson ,  Eric D. Risley ,  Jin W. Lee ,  Kevin D. Meaney

IPC: H01J27/02 ,  H01J37/08 ,  H01J27/18 ,  H01J27/16 ,  H01J27/22

CPC classification number: H01J27/028 ,  H01J27/024 ,  H01J27/16 ,  H01J27/18 ,  H01J27/22 ,  H01J37/08

Abstract: A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of electrons provided between the plasma chamber and the negative ion converter. The beam formation mechanism extracts the negative ions.

公开(公告)号：US20170359887A1

公开(公告)日：2017-12-14

申请号：US15621201

申请日：2017-06-13

Applicant: Elmer Griebeler

Inventor： Elmer Griebeler

IPC: H05H1/24 ,  H01J37/08

CPC classification number: H05H1/2406 ,  H01J37/08 ,  H05H2001/2412 ,  H05H2001/2418 ,  H05H2001/2443

Abstract: A dielectric barrier discharge actuator comprising a first electrode disposed adjacent on a surface of a dielectric; a second electrode disposed under the surface and downstream of the first electrode, relative to a flow direction of an ionized layer; an electrical ballast, a third electrode disposed on the surface of the dielectric downstream from the second electrode, connected to the second electrode through the ballast; a series of equal potential strips disposed across the surface of the dielectric and aligned perpendicular to the flow direction of the ionized layer; and a voltage source for applying a voltage across the first and second electrodes, to cause ionization of air between the first electrode and the surface of the dielectric, and to accelerate the ions across the surface of the dielectric; whereby an ionized layer is created when the first electrode is energized by the voltage source.

公开(公告)号：US09839714B2

公开(公告)日：2017-12-12

申请号：US15293519

申请日：2016-10-14

Applicant: GLOBAL PLASMA SOLUTIONS, LLC

Inventor： Charles Houston Waddell ,  Joseph Anton Christiansen

IPC: H01T23/00 ,  A61L9/22 ,  B03C3/011 ,  B03C3/41 ,  F02M27/04 ,  F16M13/02 ,  H01J37/16 ,  H01J37/30 ,  H01J27/02 ,  F01N3/08 ,  F02M35/02 ,  F24F3/16 ,  B03C3/04 ,  B03C3/82 ,  H01J37/08 ,  B01D46/00 ,  B01D46/52 ,  B03C3/155

CPC classification number: A61L9/22 ,  A61L2209/16 ,  B01D46/0032 ,  B01D46/521 ,  B03C3/011 ,  B03C3/04 ,  B03C3/155 ,  B03C3/41 ,  B03C3/82 ,  F01N3/0892 ,  F02M27/04 ,  F02M27/042 ,  F02M35/0205 ,  F02M35/0217 ,  F16M13/02 ,  F24F3/166 ,  F24F2003/1682 ,  H01J27/022 ,  H01J27/028 ,  H01J37/08 ,  H01J37/16 ,  H01J37/3002 ,  H01T23/00

Abstract: A system and method of treating air. Bipolar ionization is delivered to an airflow within a conduit from a tubeless ion generator. The ionized airflow may be delivered to a conditioned airspace by an HVAC system. In alternate applications, the airflow delivers ionized combustion air to an engine. The invention also includes a mounting assembly for positioning one or more ion generators into an airflow.

公开(公告)号：US09824859B1

公开(公告)日：2017-11-21

申请号：US14980884

申请日：2015-12-28

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  H01J37/317 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/244

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US20170330756A1

公开(公告)日：2017-11-16

申请号：US15664554

申请日：2017-07-31

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01L21/223 ,  F17C7/00 ,  H01J37/30

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US09818575B2

公开(公告)日：2017-11-14

申请号：US14942239

申请日：2015-11-16

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Jeffrey A. Burgess

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/1471 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/032

Abstract: A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode.

公开(公告)号：US20170319872A1

公开(公告)日：2017-11-09

申请号：US15589883

申请日：2017-05-08

Applicant: Radiation Detection and Imaging Technologies, LLC

Inventor： Evgeny Galyaev

IPC: A61N5/10 ,  H01J37/08 ,  H01J37/244

CPC classification number: A61N5/1049 ,  A61N5/1048 ,  A61N5/1065 ,  A61N5/1075 ,  A61N5/1077 ,  A61N2005/1087 ,  H01J37/08 ,  H01J37/244

Abstract: A particle beam detector system can comprise a particle beam generator, a particle beam fluence and position detector array based on Micromegas technology, and data readout electronics coupled to the position detector array. The particle beam fluence and position detector array can comprise a sealed, gas-filled, ionizing radiation detector chamber. A printed circuit board (PCB) can be disposed within the ionizing radiation detector chamber, the PCB comprising a multi-layer array arrangement of interconnected conductive sensor pads comprising three planar coordinate grids, X, Y, and ST (stereo) situated on separate layers of the PCB. The multi-layer array arrangement of interconnected conductive sensor pads can comprise a first footprint. A dielectric lattice structure can be disposed over the PCB and the multi-layer array arrangement of sensors. A conductive mesh structure can comprise a second footprint disposed over the dielectric lattice structure and extending over an entire area of the first footprint.

公开(公告)号：US09805912B2

公开(公告)日：2017-10-31

申请号：US12948369

申请日：2010-11-17

Applicant: Neil K. Colvin ,  Tseh-Jen Hsieh

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/317 ,  H01J47/08 ,  H01J27/02 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08

Abstract: A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

公开(公告)号：US20170294314A1

公开(公告)日：2017-10-12

申请号：US15483448

申请日：2017-04-10

Applicant: Aaron Reinicker ,  Ashwini K. Sinha

Inventor： Aaron Reinicker ,  Ashwini K. Sinha

IPC: H01L21/265 ,  C23C14/48

CPC classification number: H01L21/265 ,  C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/31701

Abstract: The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF4 and an assistant species comprising CH3F is provided, wherein the assistant species in combination with the dopant gas can produces a Ge-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.