公开(公告)号：US07820558B2

公开(公告)日：2010-10-26

申请号：US11812807

申请日：2007-06-21

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Koutaro Tanaka

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Koutaro Tanaka

IPC分类号： H01L21/31 ,  H01L29/76

CPC分类号： H01L29/7802 ,  H01J37/32192 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/518 ,  H01L29/6606 ,  H01L29/66068

摘要： A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.

摘要翻译： 通过降低SiC衬底上的栅极绝缘膜中的碳含量，获得具有小滞后和高耐电压性的膜。 具体地，将栅极绝缘膜中的碳含量设定为1×1020原子/ cm3以下。 为此，使用等离子体处理装置，在SiC衬底上形成氧化硅膜，然后通过暴露于含有氮原子的基团将形成的氧化硅膜重整。 因此，获得了电性能优异的栅极绝缘膜。

公开(公告)号：US07800202B2

公开(公告)日：2010-09-21

申请号：US12085776

申请日：2006-11-30

申请人： Tadahiro Ohmi ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto

IPC分类号： H01L29/04

CPC分类号： H01L27/1211 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/845 ,  H01L29/045 ,  H01L29/785 ,  H01L2029/7857

摘要： In order to obtain substantially the same operating speed of a p-type MOS transistor and an n-type MOS transistor forming a CMOS circuit, the n-type MOS transistor has a three-dimensional structure having a channel region on both the (100) plane and the (110) plane and the p-type MOS transistor has a planar structure having a channel region only on the (110) plane. Further, both the transistors are substantially equal to each other in the areas of the channel regions and gate insulating films. Accordingly, it is possible to make the areas of the gate insulating films and so on equal to each other and also to make the gate capacitances equal to each other.

摘要翻译： 为了获得形成CMOS电路的p型MOS晶体管和n型MOS晶体管的大致相同的工作速度，n型MOS晶体管具有三维结构，在（100） （110）面和p型MOS晶体管具有仅在（110）面上具有沟道区的平面结构。 此外，两个晶体管在沟道区域和栅极绝缘膜的区域中基本上彼此相等。 因此，可以使栅极绝缘膜等的面积相等并且使栅极电容彼此相等。

公开(公告)号：US20100230387A1

公开(公告)日：2010-09-16

申请号：US12308333

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23F1/00 ,  C23C16/455 ,  C23C16/511 ,  B22F3/12 ,  B28B1/00

CPC分类号： B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

摘要： Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

摘要翻译： 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US07781035B2

公开(公告)日：2010-08-24

申请号：US10487840

申请日：2002-08-28

申请人： Toshihiko Jimbo ,  Toshihide Murakami ,  Tadahiro Ohmi

发明人： Toshihiko Jimbo ,  Toshihide Murakami ,  Tadahiro Ohmi

IPC分类号： B32B1/02 ,  B32B27/00 ,  B32B1/08

CPC分类号： H01L21/67303 ,  H01L21/67306 ,  H01L21/67313 ,  H01L21/67316 ,  H01L21/6732 ,  H01L21/67323 ,  H01L21/67326 ,  H01L21/6733 ,  H01L21/67353 ,  H01L21/67359 ,  H01L21/67386 ,  Y10T428/13 ,  Y10T428/1303 ,  Y10T428/1352 ,  Y10T428/1359 ,  Y10T428/1386 ,  Y10T428/139

摘要： A container for precision substrate having one or more component formed by molding a thermoplastic resin, characterized in that the component satisfies characteristics [1] and [2] below. [1] When being brought to contact ultra high purity argon gas (impurity concentration: 1 ppb or less) at 25° C. having a flow rate of 1.2 L/min., a water amount in said argon gas after 300 minutes is 30 ppb or less per a surface area 1 cm2 of the component. [2] When being placed in the air at 100° C., an increase amount of organics in the air in 300 minutes is 150 ng or less per weight 1 g of the component. According to the container, demands for low contamination can be satisfied.

摘要翻译： 一种用于通过模塑热塑性树脂形成的具有一种或多种组分的精密基材的容器，其特征在于该组分满足下面的特征[1]和[2]。 [1]在流量为1.2L / min的25℃下接触超高纯氩气（杂质浓度为1ppb以下）时，300分钟后的氩气中的水分为30 ppb以下的表面积为1cm 2的成分。 [2]当在100℃下放置在空气中时，在300分钟内空气中有机物的增加量为每重量1克150克或更少。 根据容器，可以满足低污染的要求。

公开(公告)号：US07764355B2

公开(公告)日：2010-07-27

申请号：US11779571

申请日：2007-07-18

申请人： Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

发明人： Tadahiro Ohmi ,  Yusuke Muraoka ,  Yasuyoshi Miyaji ,  Yasushi Nagashima

IPC分类号： G03B27/52 ,  G03B27/58 ,  G03B27/62

CPC分类号： H01L21/6875 ,  C25D11/04 ,  C25D11/16 ,  H01L21/67103 ,  H01L21/68757 ,  H01L21/68778

摘要： A stage body has a holding surface for placing a substrate thereon. A predetermined embossed configuration is formed by embossing on the holding surface, and thereafter an alumina film in an amorphous state is formed by an anodic oxidation process on the holding surface. The alumina film having an amorphous structure is dense and strong to provide high wear resistance and to substantially prevent separation electrification. This provides a substrate stage having high wear resistance and capable of preventing separation electrification.

摘要翻译： 台体具有用于在其上放置基板的保持表面。 通过在保持表面上压花来形成预定的压花构造，然后通过阳极氧化工艺在保持表面上形成非晶状态的氧化铝膜。 具有非晶结构的氧化铝膜是致密且坚固的以提供高耐磨性并且基本上防止分离带电。 这提供了具有高耐磨性并且能够防止分离带电的基底台。

公开(公告)号：US20100183827A1

公开(公告)日：2010-07-22

申请号：US12663764

申请日：2008-06-11

申请人： Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

发明人： Masaki Hirayama ,  Tadahiro Ohmi ,  Takahiro Horiguchi

IPC分类号： H05H1/46 ,  C23C16/511

CPC分类号： C23C16/511 ,  B05C13/00 ,  H01J37/32192 ,  H01J37/32266 ,  H05H1/46

摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.

摘要翻译： 提供能够减少电介质部件的使用量的等离子体处理装置。 等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分 暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

公开(公告)号：US20100139775A1

公开(公告)日：2010-06-10

申请号：US11913277

申请日：2006-06-22

申请人： Tadahiro Ohmi ,  Masahito Saito ,  Shoichi Hino ,  Tsuyoshi Shimazu ,  Kazuyuki Miura ,  Kouji Nishino ,  Masaaki Nagase ,  Katsuyuki Sugita ,  Kaoru Hirata ,  Ryousuke Dohi ,  Takashi Hirose ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Tomokazu Imai ,  Toshihide Yoshida ,  Hisashi Tanaka

发明人： Tadahiro Ohmi ,  Masahito Saito ,  Shoichi Hino ,  Tsuyoshi Shimazu ,  Kazuyuki Miura ,  Kouji Nishino ,  Masaaki Nagase ,  Katsuyuki Sugita ,  Kaoru Hirata ,  Ryousuke Dohi ,  Takashi Hirose ,  Tsutomu Shinohara ,  Nobukazu Ikeda ,  Tomokazu Imai ,  Toshihide Yoshida ,  Hisashi Tanaka

IPC分类号： F15D1/00

CPC分类号： G05D7/0641 ,  G01F1/363 ,  G01F1/6842 ,  G01F1/6847 ,  G01F5/005 ,  G01F7/005 ,  G05D7/0635 ,  G05D7/0647 ,  G05D23/1927 ,  Y10T137/0379 ,  Y10T137/7759 ,  Y10T137/776 ,  Y10T137/8593 ,  Y10T137/86734 ,  Y10T137/86815 ,  Y10T137/87265 ,  Y10T137/87314 ,  Y10T137/8741 ,  Y10T137/87499 ,  Y10T137/87684

摘要： A pressure type flow control device enabling a reduction in size and an installation cost by accurately controlling the flow of a fluid in a wide flow range. Specifically, the flow of the fluid flowing in an orifice (8) is calculated as Qc=KP1 (K is a proportionality factor) or Qc=KP2m(P1−P2)n (K is a proportionality factor and m and n are constants) by using a pressure P1 on the upstream side of the orifice and a pressure P2 on the downstream side of the orifice. A fluid passage between the downstream side of the control valve of the flow control device and a fluid feed pipe is formed of at least two or more fluid passages positioned parallel with each other. Orifices with different fluid flow characteristics are interposed in the fluid passages positioned parallel with each other. For the control of the fluid in a small flow area, the fluid in the small flow area is allowed to flow to one orifice. For the control of the flow in the large flow area, the fluid in the large flow area is allowed to flow to the other orifice by switching the fluid passages.

摘要翻译： 一种压力式流量控制装置，通过精确地控制在大流量范围内的流体的流动，能够减小尺寸和安装成本。 具体地说，在孔（8）中流动的流体的流量被计算为Qc = KP1（K是比例因子）或Qc = KP2m（P1-P2）n（K是比例因子，m和n是常数） 通过使用孔口上游侧的压力P1和孔口下游侧的压力P2。 在流量控制装置的控制阀的下游侧和流体供给管之间的流体通道由彼此平行定位的至少两个或更多个流体通道形成。 具有不同流体流动特性的孔口插入彼此平行定位的流体通道中。 为了控制小流量区域中的流体，允许小流量区域中的流体流到一个孔口。 为了控制大流量区域中的流动，通过切换流体通道允许大流量区域中的流体流向另一个孔口。

公开(公告)号：US20100139762A1

公开(公告)日：2010-06-10

申请号：US12601684

申请日：2008-05-02

申请人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

发明人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

IPC分类号： H01L31/04 ,  C23C16/513 ,  B32B9/04 ,  C30B25/02

CPC分类号： C23C16/511 ,  C23C16/18 ,  C23C16/45565 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/7869 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/184 ,  H01L31/1884 ,  H01L31/206 ,  H01L33/0066 ,  H01L33/0087 ,  H01L33/02 ,  H01L2924/0002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.

摘要翻译： 将有机金属材料气体供给到由微波激发的低电子温度和高密度等离子体中，以形成作为成膜体的基板上的化合物的薄膜。 在这种情况下，通过利用有机金属材料气体的蒸汽压力和温度之间的关系来控制有机金属材料气体的供给系统的温度。

公开(公告)号：US20100126848A1

公开(公告)日：2010-05-27

申请号：US12089331

申请日：2006-10-06

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

摘要翻译： 提供一种磁控溅射装置，通过增加目标上的瞬时侵蚀密度可以提高成膜速度，通过随时间移动侵蚀区域可以延长目标寿命，以防止目标局部磨损，并实现均匀的磨损。 多个板状磁铁安装在柱状旋转轴的周围，柱状旋转轴旋转，从而在靶上形成高密度的侵蚀区域，以增加成膜速度，并且随着柱状体的旋转而使侵蚀区域移动 旋转轴，从而均匀地佩戴目标。

公开(公告)号：US20100101834A1

公开(公告)日：2010-04-29

申请号：US12528667

申请日：2008-02-22

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura ,  Masahiro Nakamura

IPC分类号： H01B3/22 ,  H01B3/24 ,  B32B37/00

CPC分类号： H01L21/3127 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T156/10 ,  H01L2924/00

摘要： An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.

摘要翻译： 层间绝缘膜可以通过层叠含有Si原子的烃层和含有N原子的碳氟化合物层而制造，其中烃层含有H原子和C原子，其比例为 的C原子数与H原子数（H / C）成为0.8〜1.2。 层间绝缘膜使得可以抑制由热退火引起的漏电流的产生和膜收缩，并且具有低介电常数并且是稳定的。