摘要:
A stress compensation for use in packaging, and a method of forming, is provided. The stress compensation layer is placed on an opposing side of a substrate from an integrated circuit die. The stress compensation layer is designed to counteract at least some of the stress exerted structures on the die side of the substrate, such as stresses exerted by a molding compound that at least partially encapsulates the first integrated circuit die. A package may also be electrically coupled to the substrate.
摘要:
The described embodiments of mechanisms of forming connectors for package on package enable smaller connectors with finer pitch, which allow smaller package size and additional connections. The conductive elements on one package are partially embedded in the molding compound of the package to bond with contacts or metal pads on another package. By embedding the conductive elements, the conductive elements may be made smaller and there are is gaps between the conductive elements and the molding compound. A pitch of the connectors can be determined by adding a space margin to a maximum width of the connectors. Various types of contacts on the other package can be bonded to the conductive elements.
摘要:
A device includes a work piece, and a metal trace on a surface of the work piece. A Bump-on-Trace (BOT) is formed at the surface of the work piece. The BOT structure includes a metal bump, and a solder bump bonding the metal bump to a portion of the metal trace. The metal trace includes a metal trace extension not covered by the solder bump.
摘要:
An enhanced wafer level chip scale packaging (WLCSP) copper electrode post is described having one or more pins that protrude from the top of the electrode post. When the solder ball is soldered onto the post, the pins are encapsulated within the solder material. The pins not only add shear strength to the soldered joint between the solder ball and the electrode post but also create a more reliable electrical connection due to the increased surface area between the electrode post/pin combination and the solder ball. Moreover, creating an irregularly shaped solder joint retards the propagation of cracks that may form in the intermetal compounds (IMC) layer formed at the solder joint.
摘要:
A flip-chip underfill method is proposed for the purpose of underfilling a gap formed beneath a semiconductor chip mounted in a flip-chip manner over an underlying surface. The flip-chip underfill method comprises the following procedural steps of: preparing a dispensing needle having an outlet; then, moving the dispensing needle in such a manner as to position the outlet thereof at a corner point between the upper surface and the sidewall of the semiconductor chip; and finally injecting resin at the targeted corner point, which allows the injected resin from the outlet of the dispensing needle to flow down along the sidewall of the semiconductor chip to the edge of the lower surface of the semiconductor chip and subsequently fill into the gap through capillary action. This flip-chip underfill method is more advantageous to use than the prior art since it allows the dispensing needle to be unobstructed by any gold wires or passive components mounted beside the chip and also allows the injected resin to be substantially confined to the targeted area beneath the chip without being wasted.
摘要:
A flip-chip package technology is proposed for use to fabricate a dual-chip integrated circuit package that includes two semiconductor chips in a single package unit, which is characterized in the forming of a flash-barrier structure that can help prevent the underfill material used in flip-chip underfill process from flashing to other unintended areas. The flash-barrier structure can be either a protruded dam structure over the underlying semiconductor chip, or a groove in a coating layer formed over the underlying semiconductor chip. During flip-chip underfill process, the flash-barrier structure can confine the underfill material within the intended area and prevent the underfill material from flowing to other unintended areas such as nearby bonding pads, so that the finished package product can be assured in quality and reliability.
摘要:
A multi-chip module (MCM) integrated circuit package structure is proposed, which can be used to pack a plurality of semiconductor chips of different functions while nonetheless allowing the overall package size to be as small as some existing types of integrated circuit packages, such as the SO (Small Outline) and QFP (Quad Flat Package) types, so that it can be manufactured using the existing fabrication equipment. The proposed MCM integrated circuit package structure is characterized in the use of a substrate having a centrally-located opening, and at least one semiconductor chip is mounted on the front surface of the substrate and a semiconductor chip of a central-pad type having a plurality of centrally-located bonding pads is mounted on the back surface of the substrate with the centrally-located bonding pads being exposed through the opening. This arrangement allows the overall package size to be made very compact and also allows the wiring to the central-pad type semiconductor chip to be shortened.
摘要:
Methods and apparatus for a solder mask trench used in a bump-on-trace (BOT) structure to form a semiconductor package are disclosed. A solder mask layer is formed on a trace and on a substrate. An opening of the solder mask layer, called a solder mask trench, is formed to expose the trace on the substrate. The solder mask trench has a width about a size of a diameter of a solder bump. A solder bump is landed directly on the exposed trace to connect a chip to the trace by an interconnect. With the formation of the solder mask trench, the trace exposed in the solder mask trench have a better grab force, which reduces the trace peeling failure for the semiconductor package. A plurality of solder mask trench rings may be formed in a package.
摘要:
Methods and apparatus for package on package structures. A structure includes a first integrated circuit package including at least one integrated circuit device mounted on a first substrate, a plurality of package on package connectors extending from a bottom surface and arranged in a pattern of one or more rows proximal to an outer periphery of the first substrate; and a second integrated circuit package including at least another integrated circuit device mounted on a second substrate and a plurality of lands on an upper surface coupled to the plurality of package on package connectors, and a plurality of external connectors extending from a bottom surface of the second substrate; wherein the pattern of the external connectors is staggered from the pattern of the package on package connectors so that the package on package connectors are not in vertical alignment with the external connectors. Methods for forming structures are disclosed.
摘要:
A structure includes a metal pad over a semiconductor substrate, a passivation layer having a portion over the metal pad, and a first polyimide layer over the passivation layer, wherein the first polyimide layer has a first thickness and a first Young's modulus. A post-passivation interconnect (PPI) includes a first portion over the first polyimide layer, and a second portion extending into the passivation layer and the first polyimide layer. The PPI is electrically coupled to the metal pad. A second polyimide layer is over the PPI. The second polyimide layer has a second thickness and a second Young's modulus. At least one of a thickness ratio and a Young's modulus ratio is greater than 1.0, wherein the thickness ratio is the ratio of the first thickness to the second thickness, and the Young's modulus ratio is the ratio of the second Young's modulus to the first Young's modulus.