公开(公告)号：US09551088B2

公开(公告)日：2017-01-24

申请号：US14206558

申请日：2014-03-12

Applicant: The Regents of the University of California ,  Japan Science and Technology Agency

Inventor： Kenji Fujito ,  Tadao Hashimoto ,  Shuji Nakamura

IPC: C30B7/10 ,  C30B29/40

CPC classification number: C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Abstract translation: 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更大的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在600℃以上的还原气体中退火之后从先前的氨热处理中回收。高压釜可以包括填充有氨的内部室，其中氨从内部室释放到高压釜 当氨在高压釜加热后达到超临界状态时，超临界氨的对流转移源材料并将转移的原材料沉积到晶种上，而防止源材料的未溶解颗粒被转移并沉积在 晶种。

公开(公告)号：US09515240B2

公开(公告)日：2016-12-06

申请号：US14947244

申请日：2015-11-20

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/50 ,  H01L33/32 ,  H01L33/46 ,  H01L33/48 ,  H01L33/58 ,  F21K99/00

CPC classification number: H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

公开(公告)号：US09396943B2

公开(公告)日：2016-07-19

申请号：US14839405

申请日：2015-08-28

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/02 ,  H01L29/20 ,  H01L21/78 ,  H01L21/3063 ,  H01S5/02 ,  H01S5/183 ,  H01S5/343 ,  B82Y20/00 ,  H01L21/306 ,  H01S5/20

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US09340899B2

公开(公告)日：2016-05-17

申请号：US14305734

申请日：2014-06-16

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Asako Hirai ,  Zhongyuan Jia ,  Makoto Saito ,  Hisashi Yamada ,  Kenji Iso ,  Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

IPC: H01L21/02 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20 ,  H01L29/26 ,  C30B23/06 ,  H01L31/0304 ,  H01L31/036 ,  H01L31/18 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

CPC classification number: C30B29/406 ,  C30B23/025 ,  C30B23/066 ,  C30B25/18 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/26 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01S5/34333 ,  Y10T428/24612

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract translation: 提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。 膜的表面形态通过朝向a轴方向的误差角而改进，包括朝向a轴方向的0.15°或更大的误差角和朝向a轴方向的小于30°的倾斜角。

公开(公告)号：US20150371849A1

公开(公告)日：2015-12-24

申请号：US14839405

申请日：2015-08-28

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/02

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US20140353707A1

公开(公告)日：2014-12-04

申请号：US14461151

申请日：2014-08-15

Applicant: The Regents of the University of California

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Hirokuni Asamizu

IPC: H01L33/62 ,  H01L33/58

CPC classification number: H01L33/62 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/22 ,  H01L33/387 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1815 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract translation: 透明发光二极管（LED）包括多个III族氮化物层，包括发射光的有源区，除了有源区以外的所有层对于光的发射波长是透明的，使得光是 通过所有层有效提取，并在多个方向通过层提取。 此外，一个或多个III族氮化物层的表面可以被粗糙化，纹理化，图案化或成形以增强光提取。

公开(公告)号：US08866126B2

公开(公告)日：2014-10-21

申请号：US13904908

申请日：2013-05-29

Applicant: The Regents of the University of California

Inventor： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC: H01L33/12 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/34 ,  H01S5/32 ,  H01L33/00 ,  H01S5/343 ,  H01S5/22 ,  H01L33/32 ,  H01L33/16

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US20140126599A1

公开(公告)日：2014-05-08

申请号：US14065736

申请日：2013-10-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Jeremiah J. Weaver ,  Steven P. DenBaars ,  James S. Speck S. Speck ,  Shuji Nakamura

IPC: H01S5/10

CPC classification number: H01S5/0202 ,  B82Y20/00 ,  H01S5/0203 ,  H01S5/3202 ,  H01S5/34333

Abstract: An (Al,In,B,Ga)N or III-nitride based laser diode epitaxially grown on orientations other than a c-plane orientation, namely various semipolar and nonpolar orientations, and having polished facets. The semipolar orientation may be a semipolar (11-22), (11-2-2), (101-1), (10-1-1), (20-21), (20-2-1), (30-31) or (30-3-1) orientation, and the nonpolar orientation may be a nonpolar (10-10) or (11-20) orientation. The facets are chemically mechanically or mechanically polished.

Abstract translation: 外延生长在c面取向以外的取向上的（Al，In，B，Ga）N或III族氮化物基激光二极管，即各种半极性和非极性取向，并具有抛光面。 半极性取向可以是半极性（11-22），（11-2-2），（101-1），（10-1-1），（20-21），（20-2-1），（ 30-31）或（30-3-1）取向，并且非极性取向可以是非极性（10-10）或（11-20）取向。 这些面经化学机械或机械抛光。

公开(公告)号：US20140103361A1

公开(公告)日：2014-04-17

申请号：US14135241

申请日：2013-12-19

Applicant: The Regents of the University of California

Inventor： Daniel B. Thompson ,  Jacob J. Richardson ,  Ingrid Koslow ,  Jun Seok Ha ,  Frederick F. Lange ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/44 ,  H01L33/32

CPC classification number: H01L33/44 ,  H01L21/288 ,  H01L33/007 ,  H01L33/14 ,  H01L33/28 ,  H01L33/32 ,  H01L33/40

Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

Abstract translation: 一种高亮度III-Nitride型发光二极管（LED），包括由氧化锌（ZnO）层覆盖的多个表面，其中ZnO层在低温水溶液中生长，并且各自具有（0001）c取向和 （0001）面的顶面。

公开(公告)号：US20140091349A1

公开(公告)日：2014-04-03

申请号：US14099259

申请日：2013-12-06

Applicant: The Regents of the University of California

Inventor： Frederic S. Diana ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/60 ,  H01L33/50

CPC classification number: H01L33/60 ,  F21K9/64 ,  H01L33/32 ,  H01L33/46 ,  H01L33/483 ,  H01L33/50 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die.

Abstract translation: 一种用于增加白光发光二极管（WLED）的发光效率的方法，包括在LED管芯和荧光体之间以及在所述荧光体和外部介质之间引入光学功能界面，其中所述荧光体和 LED管芯提供对由荧光体远离外部介质发出的光的反射率以及由LED管芯发射的光的透射率。 因此，WLED可以包括围绕LED管芯，荧光体层以及放置在荧光体层和第一材料之间的用于直接LED发射和反射用于荧光体发射的透明的至少一个附加层或材料的第一材料 其围绕LED管芯。