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138 条记录 (耗时 0.034 秒)

    Reduction of copper dewetting by transition metal deposition
    63.
    发明申请
    Reduction of copper dewetting by transition metal deposition 有权
    通过过渡金属沉积减少铜的去湿

    公开(公告)号：US20060199372A1

    公开(公告)日：2006-09-07

    申请号：US11069514

    申请日：2005-03-01

    申请人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick Yu

    发明人： Hua Chung ,  Seshadri Ganguli ,  Christophe Marcadal ,  Jick Yu

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/76846 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

    摘要： A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.

    摘要翻译： 一种用于在衬底上形成层的方法和装置，包括在具有孔的衬底表面上沉积金属籽晶层，在铜籽晶层上沉积过渡金属层，以及在过渡金属层上沉积体金属层。 还有一种用于通过电介质形成通孔以在通孔底部露出金属的方法和装置，沉积过渡金属层，以及在过渡金属层上沉积第一金属层。 另外，一种用于在暴露的金属表面上沉积过渡金属层并在其上沉积选自由封盖层和低介电常数层组成的层的方法和装置。

    Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata
    65.
    发明申请
    Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata 有权
    使用钽前体taimata的含钽材料的原子层沉积

    公开(公告)号：US20060019495A1

    公开(公告)日：2006-01-26

    申请号：US11061039

    申请日：2005-02-19

    申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    IPC分类号： H01L21/00

    CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

    摘要： In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing film during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing film is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. A metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.

    摘要翻译： 在本发明的一个实例中，提供了一种用于在处理室中的衬底上沉积含钽材料的方法，其包括将衬底暴露于含有TAIMATA的钽前体和至少一种次级前体以沉积含钽的 在原子层沉积（ALD）过程中的膜。 重复ALD处理直到含有钽的膜以预定厚度沉积。 通常，TAIMATA在将钽前体脉冲进入处理室之前被预热。 诸如钨或铜的金属层可以沉积在含钽材料上。 含钽材料可以包括钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。 含钽材料可以作为阻挡层或粘附层沉积在源极/漏极器件内的通孔或栅电极材料内。

    CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW
    68.
    发明申请
    CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW 失效
    CU表面等离子体处理，以改善GAPFILL WINDOW

    公开(公告)号：US20100096273A1

    公开(公告)日：2010-04-22

    申请号：US12256418

    申请日：2008-10-22

    申请人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

    发明人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

    IPC分类号： H01L21/288

    CPC分类号： H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

    摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

    摘要翻译： 一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。 在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。 衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。 在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。 掺杂剂主要并入到场区域上的导电种子层中。 导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成 在开口。

    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES
    70.
    发明申请
    SELECTIVE COBALT DEPOSITION ON COPPER SURFACES 审中-公开
    选择性钴沉积铜表面

    公开(公告)号：US20090269507A1

    公开(公告)日：2009-10-29

    申请号：US12111921

    申请日：2008-04-29

    申请人： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

    发明人： Sang-Ho Yu ,  Kevin Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan

    IPC分类号： B05D3/04 ,  B05D5/12 ,  C23C16/44

    CPC分类号： C23C16/16 ,  C23C16/0218 ,  C23C16/18 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

    摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

    摘要翻译： 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 在一个实施例中，提供了一种用于封盖衬底上的铜表面的方法，其包括将衬底定位在处理室内，其中衬底含有受污染的铜表面和电介质表面，将形成的污染的铜表面暴露于还原剂 在预处理过程中的铜表面，将基底暴露于钴前体气体，以在铜表面上选择性地形成钴覆盖层，同时在气相沉积工艺期间暴露介电表面，并且在钴上沉积介电阻挡层 覆盖层和电介质表面。 在另一个实施方案中，沉积处理循环包括进行气相沉积工艺和随后的后处理工艺，该沉积处理循环可以重复以形成多个钴覆盖层。