公开(公告)号：US08637989B2

公开(公告)日：2014-01-28

申请号：US13569653

申请日：2012-08-08

Applicant: Ho-jin Lee ,  Hyun-soo Chung ,  Chang-seong Jeon ,  Sang-sick Park ,  Jae-hyun Phee

Inventor： Ho-jin Lee ,  Hyun-soo Chung ,  Chang-seong Jeon ,  Sang-sick Park ,  Jae-hyun Phee

IPC: H01L23/48

CPC classification number: H01L23/48 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05647 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/01327 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941

Abstract: A semiconductor device includes a semiconductor substrate and a via electrode. The via electrode has a first portion on the substrate and extends towards the substrate and has a plurality of spikes that extends from the first portion into the substrate, each of the spikes being spaced apart form one another.

Abstract translation: 半导体器件包括半导体衬底和通孔电极。 通孔电极在基板上具有第一部分并且朝向基板延伸并且具有从第一部分延伸到基板中的多个尖峰，每个尖峰彼此间隔开。

公开(公告)号：US20130200525A1

公开(公告)日：2013-08-08

申请号：US13718580

申请日：2012-12-18

Applicant: Ho-Jin LEE ,  Pil-Kyu KANG ,  Kyu-Ha LEE ,  Byung-Lyul PARK ,  Hyun-Soo CHUNG ,  Gil-Heyun CHOI

Inventor： Ho-Jin LEE ,  Pil-Kyu KANG ,  Kyu-Ha LEE ,  Byung-Lyul PARK ,  Hyun-Soo CHUNG ,  Gil-Heyun CHOI

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/525 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/05568 ,  H01L2224/06181 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.

Abstract translation: 一种半导体器件，包括下层，在下层的第一侧上的绝缘层，绝缘层中的互连结构，下层中的通孔结构。 通孔结构突出到绝缘层和互连结构中。

公开(公告)号：US08482129B2

公开(公告)日：2013-07-09

申请号：US13027594

申请日：2011-02-15

Applicant: In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

Inventor： In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

IPC: H01L23/48

CPC classification number: H01L21/76898 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/05552

Abstract: A method of manufacturing a semiconductor device includes forming an integrated circuit region on a semiconductor wafer. A first metal layer pattern is formed over the integrated circuit region. A via hole is formed to extend through the first metal layer pattern and the integrated circuit region. A final metal layer pattern is formed over the first metal layer pattern and within the via hole. A plug is formed within the via hole. Thereafter, a passivation layer is formed to overlie the final metal layer pattern.

Abstract translation: 一种制造半导体器件的方法包括在半导体晶片上形成集成电路区域。 在集成电路区域上形成第一金属层图案。 通孔形成为延伸穿过第一金属层图案和集成电路区域。 最终的金属层图案形成在第一金属层图案之上并且在通孔内。 在通孔内形成插头。 此后，形成钝化层以覆盖最终金属层图案。

公开(公告)号：US08431479B2

公开(公告)日：2013-04-30

申请号：US12797837

申请日：2010-06-10

Applicant: Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

Inventor： Ki-Hyuk Kim ,  Nam-Seog Kim ,  Hyun-Soo Chung ,  Seok-Ho Kim ,  Myeong-Soon Park ,  Chang-Woo Shin

IPC: H01L21/4763

CPC classification number: H01L21/76813 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/49816 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02317 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

Abstract translation: 半导体器件及其形成方法，包括在芯片衬底上形成芯片焊盘，在芯片焊盘和芯片衬底上形成钝化层，在钝化层上形成第一绝缘层，形成凹槽和第一开口 所述第一绝缘层在所述钝化层中形成对应于所述第一开口的第二开口，在所述凹部，所述第一开口和所述第二开口的再分布线区域中形成再分配线，在所述再分布上形成第二绝缘层 线和第一绝缘层，并且在第二绝缘体中形成开口以将再分配线的一部分暴露为再分布焊盘。

公开(公告)号：US08426252B2

公开(公告)日：2013-04-23

申请号：US13537953

申请日：2012-06-29

Applicant: Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

Inventor： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC: H01L21/00 ,  H01L21/44

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

Abstract: In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

公开(公告)号：US20120104608A1

公开(公告)日：2012-05-03

申请号：US13346191

申请日：2012-01-09

Applicant: Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

Inventor： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC: H01L25/07

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

Abstract: In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

Abstract translation: 在具有应力消除间隔物的半导体器件封装及其制造方法中，从芯片本体延伸的金属互连指状物提供芯片互连。 金属手指通过应力消除间隔物与芯片的主体隔离。 在一个示例中，这种隔离采取气隙的形式。 在另一个实例中，这种隔离采用弹性体材料的形式。 在这两种情况下，都避免了金属互连指和芯体之间的热膨胀系数的不匹配，从而减轻了与开裂和分层相关的问题，从而提高了器件的产量和器件的可靠性。

公开(公告)号：US08111520B2

公开(公告)日：2012-02-07

申请号：US12344817

申请日：2008-12-29

Applicant: Hyun-Soo Chung ,  Dong-Ho Lee ,  Dong-Han Kim ,  Seong-Deok Hwang ,  Ki-Hyuk Kim

Inventor： Hyun-Soo Chung ,  Dong-Ho Lee ,  Dong-Han Kim ,  Seong-Deok Hwang ,  Ki-Hyuk Kim

IPC: H05K1/18

CPC classification number: H05K1/185 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H05K3/3457 ,  H05K3/4694 ,  H05K2201/10719

Abstract: A semiconductor module can include a printed circuit board (PCB) and a semiconductor package inserted into an inner space of the PCB. The semiconductor package may be electrically connected to the PCB. The PCB may thus surround the semiconductor package so that cracks may not be generated in the outer terminals.

Abstract translation: 半导体模块可以包括插入到PCB的内部空间中的印刷电路板（PCB）和半导体封装。 半导体封装可以电连接到PCB。 因此，PCB可以围绕半导体封装，从而可能不会在外部端子中产生裂纹。

公开(公告)号：US20090302418A1

公开(公告)日：2009-12-10

申请号：US12478365

申请日：2009-06-04

Applicant: Hyun-Soo CHUNG ,  Dong-Ho LEE ,  Dong-Hyeon JANG ,  Eun-Chul AHN ,  Kun-Gu LEE ,  Chang-Woo SHIN

Inventor： Hyun-Soo CHUNG ,  Dong-Ho LEE ,  Dong-Hyeon JANG ,  Eun-Chul AHN ,  Kun-Gu LEE ,  Chang-Woo SHIN

IPC: H01L23/525

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a fuse structure of a semiconductor device. The fuse structure may include an insulating layer pattern structure, a fuse and a protecting layer pattern. The insulating layer pattern structure may be formed on a substrate. The insulating layer pattern structure may have an opening. The fuse may be formed in the opening. The protecting layer pattern may be formed in the opening of the insulating layer pattern structure to cover the fuse.

Abstract translation: 提供半导体器件的熔丝结构。 熔丝结构可以包括绝缘层图案结构，熔丝和保护层图案。 绝缘层图案结构可以形成在基板上。 绝缘层图案结构可以具有开口。 保险丝可以形成在开口中。 保护层图案可以形成在绝缘层图案结构的开口中以覆盖保险丝。

公开(公告)号：US07598607B2

公开(公告)日：2009-10-06

申请号：US12123367

申请日：2008-05-19

Applicant: Hyun-Soo Chung ,  Dong-Hyeon Jang ,  Nam-Seog Kim ,  Sun-Won Kang

Inventor： Hyun-Soo Chung ,  Dong-Hyeon Jang ,  Nam-Seog Kim ,  Sun-Won Kang

IPC: H01L23/02

CPC classification number: H01L23/3128 ,  H01L23/5389 ,  H01L24/24 ,  H01L25/105 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/92244 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00

Abstract: Provided is a semiconductor package with enhanced joint reliability and methods of fabricating the same. The method includes: forming package units including a semiconductor chip interposed between a bottom layer and a top layer; and sequentially stacking the package units on a substrate. The bottom layer and the top layer are formed of a material having a lower modulus than the semiconductor chip. The semiconductor package includes: at least one package unit disposed on a substrate, the package unit including a semiconductor chip having a pad, a bottom layer and a top layer substantially surrounding the semiconductor chip, and a redistribution structure overlying the top layer. The redistribution structure is electrically connected to the pad.

Abstract translation: 提供了具有增强的接头可靠性的半导体封装以及其制造方法。 该方法包括：形成包括插入在底层和顶层之间的半导体芯片的封装单元; 并且将所述封装单元依次堆叠在基板上。 底层和顶层由具有比半导体芯片低的模量的材料形成。 所述半导体封装包括：设置在基板上的至少一个封装单元，所述封装单元包括具有衬垫，底层和基本上围绕所述半导体芯片的顶层的半导体芯片以及覆盖所述顶层的再分布结构。 再分配结构电连接到焊盘。

公开(公告)号：US20090215229A1

公开(公告)日：2009-08-27

申请号：US12385946

申请日：2009-04-24

Applicant: Hyun-soo Chung ,  Dong-hyeon Jang ,  Dong-ho Lee ,  In-young Lee

Inventor： Hyun-soo Chung ,  Dong-hyeon Jang ,  Dong-ho Lee ,  In-young Lee

IPC: H01L21/50

CPC classification number: H01L23/3128 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/49833 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/06136 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/92147 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19103 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00

Abstract: A ball grid array type board on chip package may include an integrated circuit chip having an active surface that supports a plurality of contact pads. An interposer may be adhered to the active surface of the integrated circuit chip. At least one hole may be provided through the interposer to expose the contact pads. A board, which may have a first surface supporting a plurality of metal lines, may have a second surface adhered to the interposer. The board may have an opening through which the contact pads may be exposed. A plurality of bonding wires may connect the contact pads to the metal lines through the opening.