公开(公告)号：US09765432B2

公开(公告)日：2017-09-19

申请号：US15152731

申请日：2016-05-12

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

IPC: C23C16/455 ,  B08B9/032 ,  C23C16/44 ,  C23C14/22 ,  C23C16/52

CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US09460959B1

公开(公告)日：2016-10-04

申请号：US14958459

申请日：2015-12-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC: B08B6/00 ,  H01L21/768 ,  B08B7/00 ,  B08B3/00 ,  B08B5/00 ,  B08B9/00 ,  B08B9/027

CPC classification number: H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

Abstract: Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到​​高达约400摄氏度的温度，其中衬底包括第一表面，相对的第二表面和 开口形成在第一表面中并且朝向相对的第二表面延伸，并且其中第二表面包括设置在第二表面中并与开口对准的导电材料; 以及将基底暴露于包含约80至约100重量％的醇的工艺气体中以减少导电材料的污染表面。

公开(公告)号：US09145612B2

公开(公告)日：2015-09-29

申请号：US13930194

申请日：2013-06-28

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Xinliang Lu ,  Shih Chung Chen ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Xinyu Fu ,  Yu Lei

IPC: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45553

Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

Abstract translation: 提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

公开(公告)号：US09111876B2

公开(公告)日：2015-08-18

申请号：US14106166

申请日：2013-12-13

Applicant: Applied Materials, Inc.

Inventor： Mei Chang ,  Joseph Yudovsky

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/6776

Abstract: Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.

Abstract translation: 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

公开(公告)号：US09082828B2

公开(公告)日：2015-07-14

申请号：US14055947

申请日：2013-10-17

Applicant: Applied Materials, Inc.

Inventor： Mei Chang

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/00 ,  H01L21/3105 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L21/76885 ,  H01L21/02041 ,  H01L21/02046 ,  H01L21/02063 ,  H01L21/31058 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05011 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05647 ,  H01L2224/131 ,  H01L2224/81022 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/053

Abstract: Embodiments of the present disclosure provide a method for controlling moisture from substrate being processed. Particularly, embodiments of the present disclosure provide methods for removing moisture from polymer materials adjacent bond pad areas. One embodiment of the present includes providing a moisture sensitive precursor and forming a compound from a reaction between the moisture to be controlled and the moisture sensitive precursor.

Abstract translation: 本公开的实施例提供了一种用于从正在处理的基底控制水分的方法。 特别地，本公开的实施例提供了用于从邻近接合焊盘区域的聚合物材料除去水分的方法。 本发明的一个实施方案包括提供湿气敏感性前体并由待控制的水分与湿敏性前体之间的反应形成化合物。

公开(公告)号：US09076661B2

公开(公告)日：2015-07-07

申请号：US13905932

申请日：2013-05-30

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Jennifer Meng Tseng ,  Mei Chang ,  Annamalai Lakshmanan ,  Jing Tang

IPC: H01L23/58 ,  H01L29/06 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L29/06 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/02104 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.

Abstract translation: 描述了形成半导体器件的方法。 某些方法包括在电介质上沉积包含氮化锰的膜; 在该膜上沉积铜种子层; 以及在铜种子层上沉积铜填充层。 还描述了半导体器件。 某些半导体器件包括低k电介质层; 覆盖低k电介质层的氮化锰层; 选自铜籽晶层或覆盖氮化锰层的电化学沉积种子层的晶种层; 覆铜层的铜层。

公开(公告)号：US20150132961A1

公开(公告)日：2015-05-14

申请号：US14601611

申请日：2015-01-21

Applicant: Applied Materials, Inc.

Inventor： Mei Chang ,  Joseph Yudovsky

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/6776

Abstract: Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element and remote plasma are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.

Abstract translation: 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件和远程等离子体的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

公开(公告)号：US11946135B2

公开(公告)日：2024-04-02

申请号：US18190246

申请日：2023-03-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/14 ,  C23C16/455 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：USRE48994E1

公开(公告)日：2022-03-29

申请号：US16432928

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman W. H. Lam ,  Dien-Yeh Wu

IPC: C23C16/455 ,  C23C16/44 ,  F17D3/00

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US20210225655A1

公开(公告)日：2021-07-22

申请号：US17223506

申请日：2021-04-06

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  H01L21/28 ,  C23C16/06 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/34 ,  C23C16/42

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.