BSI image sensor package with embedded absorber for even reception of different wavelengths
    75.
    发明授权
    BSI image sensor package with embedded absorber for even reception of different wavelengths 有权
    BSI图像传感器封装,带有嵌入式吸收器,可以接收不同的波长

    公开(公告)号:US09041133B2

    公开(公告)日:2015-05-26

    申请号:US13111258

    申请日:2011-05-19

    IPC分类号: H01L31/0232 H01L27/146

    摘要: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has an opening overlying at least one of first and second light sensing elements, the semiconductor region having a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face. A light-absorbing material overlies the semiconductor region within the opening above at least one of the light sensing elements such that the first and second light sensing elements receive light of substantially the same intensity.

    摘要翻译: 提供一种用于背面照明的微电子图像传感器组件及其制造方法。 该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。 半导体区域具有覆盖第一和第二光感测元件中的至少一个的开口,该半导体区域在第一光感测元件和后表面之间具有第一厚度,在第二光感测元件与后表面之间具有第二厚度。 光吸收材料覆盖至少一个感光元件之内的开口内的半导体区域,使得第一和第二光感测元件接收基本上相同强度的光。

    Low stress vias
    79.
    发明授权
    Low stress vias 有权
    低压通孔

    公开(公告)号:US08816505B2

    公开(公告)日:2014-08-26

    申请号:US13193814

    申请日:2011-07-29

    IPC分类号: H01L23/48 H01L21/283

    摘要: A component can include a substrate having a front surface and a rear surface remote therefrom, an opening extending from the rear surface towards the front surface, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The opening can define an inner surface between the front and rear surfaces. The conductive via can include a first metal layer overlying the inner surface and a second metal region overlying the first metal layer and electrically coupled to the first metal layer. The second metal region can have a CTE greater than a CTE of the first metal layer. The conductive via can have an effective CTE across a diameter of the conductive via that is less than 80% of the CTE of the second metal region.

    摘要翻译: 部件可以包括具有远离其前表面和后表面的基板,从后表面朝向前表面延伸的开口以及在开口内延伸的导电通孔。 基底可以具有小于10ppm /℃的CTE。开口可以限定前表面和后表面之间的内表面。 导电通孔可以包括覆盖在内表面上的第一金属层和覆盖第一金属层并电耦合到第一金属层的第二金属区域。 第二金属区域可具有大于第一金属层的CTE的CTE。 导电通孔可以在导电通孔的直径上具有小于第二金属区域的CTE的80%的有效CTE。