公开(公告)号：US09125333B2

公开(公告)日：2015-09-01

申请号：US13183870

申请日：2011-07-15

申请人： Cyprian Uzoh ,  Vage Oganesian ,  Ilyas Mohammed ,  Belgacem Haba ,  Piyush Savalia ,  Craig Mitchell

发明人： Cyprian Uzoh ,  Vage Oganesian ,  Ilyas Mohammed ,  Belgacem Haba ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H05K1/03 ,  H05K1/09 ,  H05K3/40

CPC分类号： H01L24/05 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05169 ,  H01L2224/056 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/013 ,  H05K1/09 ,  H05K3/4007 ,  H05K2201/032 ,  H05K2201/0326 ,  H05K2201/0338

摘要： Barrier layers for use in electrical applications. In some embodiments the barrier layer is a laminated barrier layer. In some embodiments the barrier layer includes a graded barrier layer.

摘要翻译： 用于电气应用的阻隔层。 在一些实施例中，阻挡层是层压阻挡层。 在一些实施例中，阻挡层包括梯度阻挡层。

公开(公告)号：US20120181658A1

公开(公告)日：2012-07-19

申请号：US13182890

申请日：2011-07-14

申请人： Ilyas Mohammed ,  Belgacem Haba ,  Cyprian Uzoh ,  Piyush Savalia ,  Vage Oganesian

发明人： Ilyas Mohammed ,  Belgacem Haba ,  Cyprian Uzoh ,  Piyush Savalia ,  Vage Oganesian

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L23/642 ,  H01G4/06 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L25/0657 ,  H01L25/16 ,  H01L28/40 ,  H01L28/91 ,  H01L28/92 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor can include a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces, first and second metal elements, and a capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element can be exposed at the first surface and can extend into the through opening. The second metal element can be exposed at the second surface and can extend into the through opening. The first and second metal elements can be electrically connectable to first and second electric potentials. The capacitor dielectric layer can have an undulating shape.

摘要翻译： 电容器可以包括具有第一表面的基板，远离第一表面的第二表面，以及在第一和第二表面之间延伸的通孔，第一和第二金属元件以及将第一和第二表面分离和绝缘的电容器介电层 至少在通孔内的金属元​​件彼此之间。 第一金属元件可以在第一表面暴露并且可以延伸到通孔中。 第二金属元件可以在第二表面处露出并且可以延伸到通孔中。 第一和第二金属元件可以电连接到第一和第二电位。 电容器介电层可以具有起伏的形状。

公开(公告)号：US08742541B2

公开(公告)日：2014-06-03

申请号：US13182890

申请日：2011-07-14

申请人： Ilyas Mohammed ,  Belgacem Haba ,  Cyprian Uzoh ,  Piyush Savalia ,  Vage Oganesian

发明人： Ilyas Mohammed ,  Belgacem Haba ,  Cyprian Uzoh ,  Piyush Savalia ,  Vage Oganesian

IPC分类号： H01L21/02 ,  H01L27/108 ,  H01L29/94

CPC分类号： H01L23/642 ,  H01G4/06 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/49827 ,  H01L25/0657 ,  H01L25/16 ,  H01L28/40 ,  H01L28/91 ,  H01L28/92 ,  H01L2223/6622 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor can include a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces, first and second metal elements, and a capacitor dielectric layer separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element can be exposed at the first surface and can extend into the through opening. The second metal element can be exposed at the second surface and can extend into the through opening. The first and second metal elements can be electrically connectable to first and second electric potentials. The capacitor dielectric layer can have an undulating shape.

摘要翻译： 电容器可以包括具有第一表面的基板，远离第一表面的第二表面，以及在第一和第二表面之间延伸的通孔，第一和第二金属元件以及将第一和第二表面分离和绝缘的电容器介电层 至少在通孔内的金属元​​件彼此之间。 第一金属元件可以在第一表面暴露并且可以延伸到通孔中。 第二金属元件可以在第二表面处露出并且可以延伸到通孔中。 第一和第二金属元件可以电连接到第一和第二电位。 电容器介电层可以具有起伏的形状。

公开(公告)号：US20130014978A1

公开(公告)日：2013-01-17

申请号：US13183870

申请日：2011-07-15

申请人： Cyprian Uzoh ,  Vage Oganesian ,  Ilyas Mohammed ,  Belgacem Haba ,  Piyush Savalia ,  Craig Mitchell

发明人： Cyprian Uzoh ,  Vage Oganesian ,  Ilyas Mohammed ,  Belgacem Haba ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H05K1/09 ,  B05D1/36 ,  B05D5/12

CPC分类号： H01L24/05 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05169 ,  H01L2224/056 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01074 ,  H01L2924/013 ,  H05K1/09 ,  H05K3/4007 ,  H05K2201/032 ,  H05K2201/0326 ,  H05K2201/0338

摘要： Barrier layers for use in electrical applications. In some embodiments the barrier layer is a laminated barrier layer. In some embodiments the barrier layer includes a graded barrier layer.

摘要翻译： 用于电气应用的阻隔层。 在一些实施例中，阻挡层是层压阻挡层。 在一些实施例中，阻挡层包括梯度阻挡层。

公开(公告)号：US08937361B2

公开(公告)日：2015-01-20

申请号：US13114243

申请日：2011-05-24

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/1461 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687

摘要： A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a rear face. A semiconductor region has a first thickness between the first light sensing element and the rear face and a second thickness between the second light sensing element and the rear face such that the first and second light sensing elements receive light of substantially the same intensity. A dielectric region is provided at least substantially filling a space of the semiconductor region adjacent at least one of the light sensing elements. The dielectric region may include at least one light guide.

摘要翻译： 提供了一种用于背面照明的微电子图像传感器组件及其制造方法。 该组件包括具有在正面暴露的触点的微电子元件和被布置成通过后表面接收不同波长的光的光感测元件。 半导体区域在第一光感测元件和后表面之间具有第一厚度，并且在第二光感测元件和后表面之间具有第二厚度，使得第一和第二光感测元件接收基本上相同强度的光。 提供至少基本上填充与至少一个光感测元件相邻的半导体区域的空间的电介质区域。 电介质区域可以包括至少一个光导。

公开(公告)号：US08652935B2

公开(公告)日：2014-02-18

申请号：US12970529

申请日：2010-12-16

申请人： Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell ,  Vage Oganesian ,  Belgacem Haba

发明人： Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell ,  Vage Oganesian ,  Belgacem Haba

IPC分类号： H01L21/30

CPC分类号： H01L23/562 ,  B81C1/00269 ,  B81C1/00357 ,  H01L21/2007 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L23/13 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83345 ,  H01L2224/83385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/1027 ,  H01L2924/1032 ,  H01L2924/1037 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3511 ,  H01L2224/83 ,  H01L2924/00

摘要： A method of bonding first and second microelectronic elements includes pressing together a first substrate containing active circuit elements therein with a second substrate, with a flowable dielectric material between confronting surfaces of the respective substrates, each of the first and second substrates having a coefficient of thermal expansion less than 10 parts per million/° C., at least one of the confronting surfaces having a plurality of channels extending from an edge of such surface, such that the dielectric material between planes defined by the confronting surfaces is at least substantially free of voids and has a thickness over one micron, and at least some of the dielectric material flows into at least some of the channels.

摘要翻译： 接合第一和第二微电子元件的方法包括将含有有源电路元件的第一衬底与第二衬底压在一起，在相应衬底的相对表面之间具有可流动介电材料，第一和第二衬底中的每一个具有热系数 膨胀小于10ppm /℃，至少一个相对表面具有从该表面的边缘延伸的多个通道，使得由相对表面限定的平面之间的电介质材料至少基本上不含 空隙并且具有超过一微米的厚度，并且至少一些介电材料流入至少一些通道。

公开(公告)号：US08610259B2

公开(公告)日：2013-12-17

申请号：US12884695

申请日：2010-09-17

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Craig Mitchell ,  Piyush Savalia

IPC分类号： H01L23/48

CPC分类号： H01L23/49827 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/6622 ,  H01L2224/05009 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A microelectronic unit includes a semiconductor element consisting essentially of semiconductor material and having a front surface, a rear surface, a plurality of active semiconductor devices adjacent the front surface, a plurality of conductive pads exposed at the front surface, and an opening extending through the semiconductor element. At least one of the conductive pads can at least partially overlie the opening and can be electrically connected with at least one of the active semiconductor devices. The microelectronic unit can also include a first conductive element exposed at the rear surface for connection with an external component, the first conductive element extending through the opening and electrically connected with the at least one conductive pad, and a second conductive element extending through the opening and insulated from the first conductive element. The at least one conductive pad can overlie a peripheral edge of the second conductive element.

摘要翻译： 微电子单元包括基本上由半导体材料组成的半导体元件，其具有前表面，后表面，与前表面相邻的多个有源半导体器件，在前表面暴露的多个导电焊盘，以及延伸穿过 半导体元件。 至少一个导电焊盘可以至少部分地覆盖开口并且可以与至少一个有源半导体器件电连接。 微电子单元还可以包括暴露在后表面处以与外部部件连接的第一导电元件，第一导电元件延伸穿过开口并与至少一个导电焊盘电连接，第二导电元件延伸穿过开口 并与第一导电元件绝缘。 至少一个导电焊盘可以覆盖在第二导电元件的周边边缘上。

公开(公告)号：US08512491B2

公开(公告)日：2013-08-20

申请号：US12974611

申请日：2010-12-21

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： B32B41/00

CPC分类号： H01L22/12 ,  H01L21/67092

摘要： A method of bonding a first substrate and a second substrate includes the steps of rotating first substrate with an adhesive mass thereon, and second substrate contacting the mass and overlying the first substrate, controlling a vertical height of a heated control platen spaced apart from and not contacting the second substrate so as to control a temperature of the adhesive mass, so as to at least one of bond the first and second substrates in alignment with one another, or achieve a sufficiently planar adhesive interface between the first and second substrates.

摘要翻译： 接合第一基板和第二基板的方法包括以下步骤：使第一基板与其上的粘合剂质量物质旋转，第二基板接触物料并覆盖第一基板，控制加热的控制台板的垂直高度， 使所述第二基板接触以控制所述粘合剂物料的温度，以便使所述第一和第二基板彼此对准的至少一个接合，或在所述第一和第二基板之间实现足够平坦的粘合界面。

公开(公告)号：US20130010441A1

公开(公告)日：2013-01-10

申请号：US13618514

申请日：2012-09-14

申请人： Vage Oganesian ,  Belgacem Haba ,  Craig Mitchell ,  Ilyas Mohammed ,  Piyush Savalia

发明人： Vage Oganesian ,  Belgacem Haba ,  Craig Mitchell ,  Ilyas Mohammed ,  Piyush Savalia

IPC分类号： H05K1/18 ,  H05K5/00

CPC分类号： H01L21/76819 ,  H01L21/76877 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/4985 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L25/105 ,  H01L25/117 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/24227 ,  H01L2224/24247 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01061 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15165 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/18161 ,  Y10T29/49002 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/83

摘要： A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.

公开(公告)号：US20120273933A1

公开(公告)日：2012-11-01

申请号：US13097943

申请日：2011-04-29

申请人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

发明人： Vage Oganesian ,  Belgacem Haba ,  Ilyas Mohammed ,  Piyush Savalia ,  Craig Mitchell

IPC分类号： H01L23/12 ,  H01L21/58 ,  H01L23/488

CPC分类号： H01L25/50 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/24145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2225/06524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/00

摘要： A microelectronic assembly can include first, second and third stacked substantially planar elements, e.g., of dielectric or semiconductor material, and which may have a CTE of less than 10 ppm/° C. The assembly may be a microelectronic package and may incorporate active semiconductor devices in one, two or more of the first, second or third elements to function cooperatively as a system-in-a-package. In one example, an electrically conductive element having a minimum thickness less than 10 microns, may be formed by plating, and may electrically connect two or more of the first, second or third elements. The conductive element may entirely underlie a surface of another one of the substantially planar elements.

摘要翻译： 微电子组件可以包括例如电介质或半导体材料的第一，第二和第三堆叠的基本平坦的元件，并且其可以具有小于10ppm /℃的CTE。组件可以是微电子封装，并且可以并入有源半导体 在第一，第二或第三元件中的一个，两个或更多个元件中的装置可以协同地作为系统级封装。 在一个示例中，具有最小厚度小于10微米的导电元件可以通过电镀形成，并且可以电连接第一，第二或第三元件中的两个或更多个。 导电元件可以完全位于另一个基本上平面的元件的表面之下。