公开(公告)号：US07446408B2

公开(公告)日：2008-11-04

申请号：US10462288

申请日：2003-06-16

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Gerry Balanon

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Gerry Balanon

IPC分类号： H01L23/34

CPC分类号： H01L23/50 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/49816 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package is provided for a semiconductor device including a semiconductor device support substrate having at least one interconnect metal therein connectible to a ground and having at least one opening exposing the surface of the interconnect metal. A heat sink has elastic means integral therewith for cooperating with the opening to position and secure the heat sink to the semiconductor support substrate.

摘要翻译： 提供了一种用于半导体器件的封装，其包括半导体器件支撑衬底，其具有可连接到地的至少一个互连金属，并具有暴露互连金属表面的至少一个开口。 散热器具有与其一体的弹性装置，用于与开口协作以将散热器定位并固定到半导体支撑基板。

公开(公告)号：US20080157402A1

公开(公告)日：2008-07-03

申请号：US11618806

申请日：2006-12-30

申请人： Kambhampati Ramakrishna ,  Il Kwon Shim ,  Seng Guan Chow

发明人： Kambhampati Ramakrishna ,  Il Kwon Shim ,  Seng Guan Chow

IPC分类号： H01L23/28

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/49861 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/165 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A dual molded multi-chip package system is provided including forming an embedded integrated circuit package system having a first encapsulation partially covering a first integrated circuit die and a lead connected thereto, mounting a semiconductor device over the first encapsulation and connected to the lead, and forming a second encapsulation over the semiconductor device and the embedded integrated circuit package system.

摘要翻译： 提供了一种双模塑多芯片封装系统，包括形成嵌入式集成电路封装系统，其具有部分覆盖第一集成电路管芯的第一封装和与其连接的引线，将半导体器件安装在第一封装上并连接到引线上，以及 在半导体器件和嵌入式集成电路封装系统上形成第二封装。

公开(公告)号：US06775140B2

公开(公告)日：2004-08-10

申请号：US10434256

申请日：2003-05-07

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Virgil Cotoco Ararao ,  Sheila Marie L. Alvarez ,  Roger Emigh

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Virgil Cotoco Ararao ,  Sheila Marie L. Alvarez ,  Roger Emigh

IPC分类号： H05K720

CPC分类号： H01L23/36 ,  H01L21/4878 ,  H01L23/3128 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/3025

摘要： A method for fabricating a semiconductor device heat spreader from a unitary piece of metallic material. The metallic material is stamped to form a unitary heat spreader having an upper heat dissipation region, a lower substrate contact region, and supports connecting the upper heat dissipation region and the lower substrate contact region. A recess is formed within the supports and the upper and lower regions for receiving a semiconductor device.

摘要翻译： 一种从整体金属材料制造半导体器件散热器的方法。 金属材料被冲压以形成具有上部散热区域，下部基板接触区域和连接上部散热区域和下部基板接触区域的支撑件的整体散热器。 在支撑件和上部和下部区域中形成凹部以接收半导体器件。

公开(公告)号：US08900920B2

公开(公告)日：2014-12-02

申请号：US13207633

申请日：2011-08-11

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L23/31 ,  H01L21/56 ,  H01L21/683 ,  H01L23/538 ,  H01L23/00 ,  H01L25/10 ,  H05K1/18 ,  H01L25/16 ,  H01L23/50 ,  H05K3/46

摘要： A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

公开(公告)号：US08456002B2

公开(公告)日：2013-06-04

申请号：US13333739

申请日：2011-12-21

申请人： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

发明人： Yaojian Lin ,  Pandi C. Marimuthu ,  Kang Chen ,  Hin Hwa Goh ,  Yu Gu ,  Il Kwon Shim ,  Rui Huang ,  Seng Guan Chow ,  Jianmin Fang ,  Xia Feng

IPC分类号： H01L23/52

CPC分类号： H01L23/3114 ,  H01L21/31 ,  H01L21/56 ,  H01L21/568 ,  H01L21/768 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/528 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/19 ,  H01L24/20 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/214

摘要： A semiconductor device has a semiconductor die and conductive layer formed over a surface of the semiconductor die. A first channel can be formed in the semiconductor die. An encapsulant is deposited over the semiconductor die. A second channel can be formed in the encapsulant. A first insulating layer is formed over the semiconductor die and first conductive layer and into the first channel. The first insulating layer extends into the second channel. The first insulating layer has characteristics of tensile strength greater than 150 MPa, elongation between 35-150%, and thickness of 2-30 micrometers. A second insulating layer can be formed over the semiconductor die prior to forming the first insulating layer. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected to the first conductive layer. The first insulating layer provides stress relief during formation of the interconnect structure.

公开(公告)号：US20120217647A9

公开(公告)日：2012-08-30

申请号：US13207633

申请日：2011-08-11

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/768 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/50 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/14 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/82039 ,  H01L2224/83132 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/92144 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H05K1/185 ,  H05K1/186 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/10674 ,  H01L2924/00

摘要： A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

摘要翻译： 半导体器件具有形成在半导体晶片的有源表面上的保护层。 具有预先施加的保护层的半导体管芯从半导体晶片移动并安装在载体上。 载体上的半导体管芯和接触焊盘被封装。 载体被移除。 在预先施加的保护层和接触垫上形成第一绝缘层。 在第一绝缘层和预先施加的保护层中形成通孔以暴露半导体管芯上的互连部位。 在第一绝缘层上形成互连结构，与半导体管芯和接触焊盘上的互连部位电接触。 互连结构具有形成在第一绝缘层上的再分布层，形成在再分配层上的第二绝缘层和形成在与再分布层电接触的第二电介质上的凸块下金属化层。

公开(公告)号：US20120018882A1

公开(公告)日：2012-01-26

申请号：US13248312

申请日：2011-09-29

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Yaojian Lin

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Yaojian Lin

IPC分类号： H01L23/498 ,  H01L23/48

CPC分类号： H01L23/562 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/81805 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the conductive pillar. The carrier and adhesive layer are removed. A stress relief insulating layer is formed over the active surface of the semiconductor die and a first surface of the encapsulant. The stress relief insulating layer has a first thickness over the semiconductor die and a second thickness less than the first thickness over the encapsulant. A first interconnect structure is formed over the stress relief insulating layer. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The first and second interconnect structures are electrically connected through the conductive pillar.

摘要翻译： 通过在牺牲载体上形成第一导电层来制造半导体器件。 在第一导电层上形成导电柱。 半导体管芯的有源表面安装在载体上。 密封剂沉积在半导体管芯上方并围绕导电柱。 去除载体和粘合剂层。 在半导体管芯的有源表面和密封剂的第一表面上形成应力消除绝缘层。 应力消除绝缘层在半导体管芯上方具有第一厚度，并且第二厚度小于密封剂上的第一厚度。 在应力消除绝缘层上形成第一互连结构。 在与第一互连结构相对的密封剂的第二表面上形成第二互连结构。 第一和第二互连结构通过导电柱电连接。

公开(公告)号：US07960816B2

公开(公告)日：2011-06-14

申请号：US11306354

申请日：2005-12-23

申请人： Seng Guan Chow ,  Il Kwon Shim ,  Ming Ying ,  Byung Hoon Ahn

发明人： Seng Guan Chow ,  Il Kwon Shim ,  Ming Ying ,  Byung Hoon Ahn

IPC分类号： H01L23/495

CPC分类号： H01L21/568 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49575 ,  H01L23/49589 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/05554 ,  H01L2224/16245 ,  H01L2224/27013 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19105 ,  H01L2924/19106 ,  H05K3/202 ,  H05K3/3442 ,  H05K2201/09745 ,  H05K2201/10636 ,  Y02P70/611 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A system is provided for an integrated circuit package including a leadframe with a lead finger. A groove is in a lead finger for a conductive bonding agent and a passive device is in the groove to be held by the conductive bonding agent.

摘要翻译： 提供了一种用于集成电路封装的系统，其包括具有引线指的引线框架。 凹槽位于用于导电粘合剂的引线指中，并且无源器件位于沟槽中以由导电粘合剂保持。

公开(公告)号：US20110121449A1

公开(公告)日：2011-05-26

申请号：US12625975

申请日：2009-11-25

申请人： Yaojian Lin ,  Il Kwon Shim ,  Seng Guan Chow

发明人： Yaojian Lin ,  Il Kwon Shim ,  Seng Guan Chow

IPC分类号： H01L23/52 ,  H01L21/56

CPC分类号： H01L23/3128 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/16 ,  H01L23/3121 ,  H01L23/552 ,  H01L24/11 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a stress relief buffer mounted to a temporary substrate in locations designated for bump formation. The stress relief buffer can be a multi-layer composite material such as a first compliant layer, a silicon layer formed over the first compliant layer, and a second compliant layer formed over the silicon layer. A semiconductor die is also mounted to the temporary substrate. The stress relief buffer can be thinner than the semiconductor die. An encapsulant is deposited between the semiconductor die and stress relief buffer. The temporary substrate is removed. An interconnect structure is formed over the semiconductor die, encapsulant, and stress relief buffer. The interconnect structure is electrically connected to the semiconductor die. A stiffener layer can be formed over the stress relief buffer and encapsulant. A circuit layer containing active devices, passive devices, conductive layers, and dielectric layers can be formed within the stress relief buffer.

摘要翻译： 半导体器件具有在指定用于凸块形成的位置中安装到临时衬底的应力释放缓冲器。 应力消除缓冲器可以是多层复合材料，例如第一顺应层，在第一柔性层上形成的硅层，以及形成在硅层上的第二柔性层。 半导体管芯也安装在临时衬底上。 应力消除缓冲器可以比半导体管芯更薄。 密封剂沉积在半导体管芯和应力释放缓冲器之间。 移除临时衬底。 在半导体管芯，密封剂和应力释放缓冲器上形成互连结构。 互连结构电连接到半导体管芯。 可以在应力消除缓冲器和密封剂上形成加强层。 可以在应力消除缓冲器内形成包含有源器件，无源器件，导电层和电介质层的电路层。

公开(公告)号：US07923295B2

公开(公告)日：2011-04-12

申请号：US12615428

申请日：2009-11-10

申请人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

发明人： Il Kwon Shim ,  Yaojian Lin ,  Seng Guan Chow

IPC分类号： H01L21/00

CPC分类号： H05K1/185 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/96 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/351 ,  H05K1/187 ,  H05K3/205 ,  H05K3/4644 ,  H05K2201/10674 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a photoresist layer over a metal carrier. A plurality of openings is formed in the photoresist layer extending to the metal carrier. A conductive material is selectively plated in the openings of the photoresist layer using the metal carrier as an electroplating current path to form wettable contact pads. A semiconductor die has bumps formed on its surface. The bumps are directly mounted to the wettable contact pads to align the die with respect to the wettable contact pads. An encapsulant is deposited over the die. The metal carrier is removed. An interconnect structure is formed over the encapsulant and electrically connected to the wettable contact pads. A plurality of conductive vias is formed through the encapsulant and extends to the contact pads. The conductive vias are aligned by the wettable contact pads with respect to the die to reduce interconnect pitch.

摘要翻译： 通过在金属载体上形成光致抗蚀剂层制成半导体器件。 在延伸到金属载体的光致抗蚀剂层中形成多个开口。 使用金属载体作为电镀电流路径，将导电材料选择性地电镀在光致抗蚀剂层的开口中，以形成可湿性接触焊盘。 半导体管芯在其表面上形成凸点。 凸块直接安装到可湿性接触垫上，以相对于可湿性接触垫对准模具。 密封剂沉积在模具上。 去除金属载体。 互连结构形成在密封剂上并电连接到可湿性接触垫上。 通过密封剂形成多个导电通孔并延伸到接触垫。 导电通孔相对于管芯可湿接触焊盘对齐，以减少互连间距。