公开(公告)号：US20180294140A1

公开(公告)日：2018-10-11

申请号：US16000348

申请日：2018-06-05

Applicant: Lam Research Corporation

Inventor： John C. Valcore, JR. ,  Harmeet Singh ,  Bradford J. Lyndaker

IPC: H01J37/32 ,  H03L7/06 ,  H03L7/00 ,  H03K3/01 ,  H05H1/46

CPC classification number: H01J37/32146 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/3255 ,  H01J2237/327 ,  H03K3/01 ,  H03L7/00 ,  H03L7/06 ,  H05H2001/4682

Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

公开(公告)号：US20180218882A1

公开(公告)日：2018-08-02

申请号：US15938006

申请日：2018-03-28

Applicant: Tokyo Electron Limited

Inventor： Kumiko Ono ,  Hiroshi Tsujimoto ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32577

Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.

公开(公告)号：US20180174901A1

公开(公告)日：2018-06-21

申请号：US15384175

申请日：2016-12-19

Applicant: Lam Research Corporation

Inventor： Deqi Wang ,  Gang Liu ,  Anand Chandrashekar ,  Tsung-Han Yang ,  John W. Griswold

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/76879 ,  C23C16/08 ,  C23C16/4554 ,  C23C16/45565 ,  H01J37/3211 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/28562 ,  H01L21/67161 ,  H01L21/68764 ,  H01L21/68771

Abstract: The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. Embodiments of the disclosure relate to exposing remote plasma processing chambers to fluorine species prior to nitrogen-based remote plasma processing of substrates such as semiconductor wafers. Within-wafer uniformity and wafer-to-wafer uniformity is improved.

公开(公告)号：US09960015B2

公开(公告)日：2018-05-01

申请号：US15448880

申请日：2017-03-03

Applicant: Lam Research Corporation

Inventor： John C. Valcore, Jr. ,  Bradford J. Lyndaker

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299

Abstract: Systems and methods for impedance-based adjustment of power and frequency are described. A system includes a plasma chamber for containing plasma. The plasma chamber includes an electrode. The system includes a driver and amplifier coupled to the plasma chamber for providing a radio frequency (RF) signal to the electrode. The driver and amplifier is coupled to the plasma chamber via a transmission line. The system further includes a selector coupled to the driver and amplifier, a first auto frequency control (AFC) coupled to the selector, and a second AFC coupled to the selector. The selector is configured to select the first AFC or the second AFC based on values of current and voltage sensed on the transmission line.

公开(公告)号：US09941098B2

公开(公告)日：2018-04-10

申请号：US15464539

申请日：2017-03-21

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32577

Abstract: In a plasma processing method of sequentially performing multiple cycles, each of which includes plural stages which generate plasma of different processing gases within a processing vessel and which are performed in sequence, a setting of a high frequency power and/or a setting of a level of a DC voltage is changed at an appropriate time point after transitioning from a preceding stage to a succeeding stage. The high frequency power is supplied to one of a first electrode and a second electrode of a plasma processing apparatus, and the processing gas output from a gas supply system is changed when transitioning from the preceding stage to the succeeding stage. Thereafter, the setting of the high frequency power and/or the setting of the level of the negative DC voltage is changed at a time point when a parameter reflecting an impedance of the plasma exceeds a threshold value.

公开(公告)号：US20180096827A1

公开(公告)日：2018-04-05

申请号：US15719294

申请日：2017-09-28

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers ,  Mirko Vukovic ,  Brandon Byrns

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01L21/3065

CPC classification number: H01J37/32825 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/68764

Abstract: Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

公开(公告)号：US20180082821A1

公开(公告)日：2018-03-22

申请号：US15445027

申请日：2017-02-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Norihiko IKEDA ,  Naoki YASUI

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32669 ,  H01J2237/3341

Abstract: A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a control unit. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The control unit controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.

公开(公告)号：US09911577B2

公开(公告)日：2018-03-06

申请号：US15236319

申请日：2016-08-12

Applicant: Lam Research Corporation

Inventor： John C. Valcore, Jr. ,  Henry S. Povolny

IPC: H01J37/32 ,  G05B19/418 ,  G05B15/02

CPC classification number: H01J37/32137 ,  G05B15/02 ,  G05B19/418 ,  G05B2219/45031 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/3299

Abstract: An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.

公开(公告)号：US20180033596A1

公开(公告)日：2018-02-01

申请号：US15726235

申请日：2017-10-05

Applicant: Lam Research Corporation

Inventor： John C. Valcore, Jr. ,  Harmeet Singh ,  Bradford J. Lyndaker

IPC: H01J37/32 ,  H03K3/01 ,  H03L7/06 ,  H03L7/00 ,  H05H1/46

CPC classification number: H01J37/32146 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/3255 ,  H01J2237/327 ,  H03K3/01 ,  H03L7/00 ,  H03L7/06 ,  H05H2001/4682

Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

公开(公告)号：US20180025891A1

公开(公告)日：2018-01-25

申请号：US15636519

申请日：2017-06-28

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Kozakevich ,  Michael C. Kellogg ,  John Patrick Holland ,  Zhigang Chen ,  Kenneth Lucchesi ,  Lin Zhao

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/3299 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/68735

Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.