摘要:
A thermosetting die-bonding film having excellent adhesion to an adherent and preferable pickup properties and a dicing die-bonding film having the thermosetting die-bonding film are provided. The thermosetting die-bonding film of the present invention is a thermosetting die-bonding film that is used when manufacturing a semiconductor device and contains 15 to 30% by weight of a thermoplastic resin component and 60 to 70% by weight of a thermosetting resin component as main components, wherein a surface free energy before heat curing is 37 mJ/m2 or more and less than 40 mJ/m2.
摘要翻译:提供了具有优异的贴附性和优选拾取性能的热固性芯片接合薄膜和具有热固性芯片接合薄膜的切割芯片接合薄膜。 本发明的热固性型芯片接合薄膜是制造半导体装置时使用的热硬化型芯片接合薄膜,含有15〜30重量%的热塑性树脂成分和60〜70重量%的热固性树脂成分 作为主要成分,其中热固化前的表面自由能为37mJ / m 2以上且小于40mJ / m 2。
摘要:
A method of reducing voids within a bead of encapsulant material deposited on a series of wire bonds connecting a micro-electronic device with die contact pads extending along one edge, and a plurality of conductors on a support structure such that the wire bonds extend across a gap defined between the edge of the micro-electronic device and the plurality of conductors. The method has the steps of depositing at least one transverse bead of encapsulant in the gap extending at an angle to the edge of the micro-electronic device, and, depositing at least one longitudinal bead of encapsulant in the gap extending parallel to the edge of the micro-electronic device.
摘要:
A method of jetting drops of encapsulant from an encapsulant jetter, the drops including primary drops and satellite drops that are much smaller than the primary drops. The method has the steps of providing a series of wire bonds electrically connecting a micro-electronic device to a series of conductors, jetting the drops of encapsulant from the jetter and, inducing a gas flow with a velocity sufficient to draw the satellite drops in a predetermined direction away from the series of wire bonds while having negligible effect on the primary drops.
摘要:
A thermal insulation system is provided for a component of a bonding system, such as an optical system. The thermal insulation system comprises multiple insulation layers located between the component and a heat source. The multiple insulation layers comprise at least one layer of moving air injected into the layer and a cover layer enclosing the layer of moving air. The multiple insulation layers may further comprise a layer of static air.
摘要:
The present invention relates to an adhesive sheet for producing a semiconductor device, which is used when a semiconductor element is caused to adhere onto an adherend and the semiconductor element is wire-bonded, in which a lipophilic lamellar clay mineral is contained.
摘要:
A horn for vibratory solid-state ultrasonic welding of metals and similarly-behaved materials “self-levels” to produce wide continuous seams or large-area spot-welds between delicate workpieces without damage, even if the workpieces are not perfectly flat and parallel to the nominal toolface angle. The horn toolface flexes under pressure to conform to skew-angled workpieces because it is disposed on a tool head supported by a tool neck cut from the tool body. The tool head, the tool neck, or both are anisotropically compliant. When resonances are properly optimized for typical VSS modes of vibration, atypical but useful localized modes are excited at the compliant toolface edges, actually intensifying the bond energy where one might normally expect unwanted damping. Various design approaches optimize the characteristics of the tool head and tool neck to various materials and bonding configurations. The horns can be configured for use with existing ultrasonic welders.
摘要:
A method of applying encapsulant to a die mounted to a support structure by providing a die mounted to the support structure, the die having a back surface in contact with the support structure and an active surface opposing the back surface, the active surface having electrical contact pads, positioning a barrier proximate the electrical contact pads and spaced from the active surface to define a gap and, depositing a bead of encapsulant onto the electrical contact pads such that one side of the bead contacts the barrier and a portion of the bead extends into the gap and onto the active surface. Placing a barrier over the active surface so that it defines a narrow gap allows the geometry of the encapsulant front (the line of contact between the encapsulant and the active surface) can be more closely controlled. Any variation in the flowrate of encapsulant from the needle tends to cause bulges or valleys in the height of the bead and or the PCB side of the bead. The fluidic resistance generated by the gap between the barrier and the active surface means that the amount of encapsulant that flows into the gap and onto the active surface is almost constant. The reduced flow variations make the encapsulant front closely correspond to the shape of the barrier. Greater control of the encapsulant front allows the functional elements of the active surface of the die to be closer to the contact pads.
摘要:
A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.
摘要:
A method of manufacturing a semiconductor device includes at least bonding wires between electrode pads on a main surface of a semiconductor chip and connection pads on a wiring board. The wires form loop shapes from the electrode pads of the semiconductor chip. The method of manufacturing a semiconductor device also includes at least forming flat parts on the loop-shaped wires, and using a sealing material to seal the semiconductor chip such as to bury the flat parts.
摘要:
A semiconductor package includes a carrier strip having a die cavity and a plurality of bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip using a die attach adhesive. In one embodiment, a top surface of the semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. Underfill material is deposited into the die cavity between the semiconductor die and a surface of the die cavity. In one embodiment, a passivation layer is deposited over the semiconductor die, and a portion of the passivation layer is etched to expose a contact pad of the semiconductor die. A metal layer is deposited over the package. The metal layer forms a package bump and a plated interconnect between the package bump and the contact pad of the semiconductor die. Encapsulant is deposited over the semiconductor package.