公开(公告)号：US20160035668A1

公开(公告)日：2016-02-04

申请号：US14882484

申请日：2015-10-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. STAMPER

IPC: H01L23/528

CPC classification number: H01L23/528 ,  H01L21/76838 ,  H01L21/76895 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An automatic short length wire shape generation and strapping and method of fabricating such wires is provided. The method of manufacturing includes breaking of a wiring into adjacent short length wires which are below a maximum short length effect length. The adjacent short length wires are formed in a same wiring level of an integrated circuit. The method further includes forming a conductive strap in a single deposition process which overlaps and is in contact with the adjacent short length wires.

Abstract translation: 提供一种自动短长度线形状生成和捆扎及其制造方法。 制造方法包括将布线断裂成低于最大短长度效应长度的相邻短长度布线。 相邻的短长度导线形成在集成电路的相同布线级中。 该方法还包括在与相邻的短长度导线重叠并与其接触的单个沉积工艺中形成导电带。

公开(公告)号：US20160035512A1

公开(公告)日：2016-02-04

申请号：US14883836

申请日：2015-10-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01H11/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US20150364416A1

公开(公告)日：2015-12-17

申请号：US14832019

申请日：2015-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. GAMBINO ,  Thomas J. HARTSWICK ,  Zhong-Xiang HE ,  Anthony K. STAMPER ,  Eric J. WHITE

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/288 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76886 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/585 ,  H01L24/95 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.

公开(公告)号：US20150364368A1

公开(公告)日：2015-12-17

申请号：US14832021

申请日：2015-08-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey P. GAMBINO ,  Thomas J. HARTSWICK ,  Zhong-Xiang HE ,  Anthony K. STAMPER ,  Eric J. WHITE

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/58 ,  H01L21/288

CPC classification number: H01L21/2885 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/288 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76886 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/585 ,  H01L24/95 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance conduction path on a wafer, and forming an electroplated seed layer in direct contact with the low resistance conduction path.

公开(公告)号：US20150318839A1

公开(公告)日：2015-11-05

申请号：US14755522

申请日：2015-06-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Anthony K. STAMPER ,  Randy L. WOLF

IPC: H03H9/13 ,  H03H9/02 ,  G06F17/50 ,  H03H9/64

CPC classification number: H03H9/13 ,  G06F17/5081 ,  H01L41/08 ,  H03H3/08 ,  H03H9/02543 ,  H03H9/64 ,  H03H9/6403 ,  H03H9/6413 ,  H03H2003/0071 ,  H03H2009/02299 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a fixed electrode with a plurality of fingers on the piezoelectric substrate. The method further includes forming a moveable electrode with a plurality of fingers over the piezoelectric substrate. The method further includes forming actuators aligned with one or more of the plurality of fingers of the moveable electrode.

Abstract translation: 本文公开了可切换和/或可调滤波器，制造方法和设计结构。 形成滤波器的方法包括形成至少一个包括形成在压电基片上的多个电极的压电滤波器结构。 该方法还包括在压电基片上形成多个指状物的固定电极。 该方法还包括在压电衬底上形成具有多个指状物的可移动电极。 该方法还包括形成与可移动电极的多个指状物中的一个或多个对准的致动器。

公开(公告)号：US20150200069A1

公开(公告)日：2015-07-16

申请号：US14670671

申请日：2015-03-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01H59/00 ,  H01H49/00

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

Abstract translation: 提供MEMS开关和制造MEMS开关的方法。 所述MEMS开关具有至少两个悬臂电极，所述至少两个悬臂电极具有重叠的端部，并且在被至少一个固定电极施加电压时被构造和可操作以彼此接触。

公开(公告)号：US20150054100A1

公开(公告)日：2015-02-26

申请号：US14519772

申请日：2014-10-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  B81C1/00 ,  G06F17/50

CPC classification number: B81B3/001 ,  B81B3/0021 ,  B81B3/0059 ,  B81B3/0072 ,  B81B7/0006 ,  B81B7/008 ,  B81B2201/016 ,  B81B2203/0163 ,  B81C1/00015 ,  B81C1/0015 ,  B81C1/00476 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/1134 ,  H01L41/1138 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49121

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer on a substrate comprising actuator electrodes and a contact electrode. The method further includes forming a MEMS beam above the wiring layer. The method further includes forming at least one spring attached to at least one end of the MEMS beam. The method further includes forming an array of mini-bumps between the wiring layer and the MEMS beam.

Abstract translation: 提供微机电系统（MEMS）结构，制造方法和设计结构。 形成MEMS结构的方法包括在包括致动器电极和接触电极的基板上形成布线层。 该方法还包括在布线层上方形成MEMS光束。 该方法还包括形成至少一个连接到MEMS梁的至少一端的弹簧。 该方法还包括在布线层和MEMS光束之间形成微小凸块的阵列。

公开(公告)号：US20150041932A1

公开(公告)日：2015-02-12

申请号：US14515681

申请日：2014-10-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Christopher V. JAHNES ,  Anthony K. STAMPER ,  Eric J. WHITE

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.

Abstract translation: 形成至少一个微机电系统（MEMS）空腔的方法包括在布线层和基板上形成第一牺牲腔层。 该方法还包括在第一牺牲腔层上形成绝缘体层。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔的平坦表面。

公开(公告)号：US20140191408A1

公开(公告)日：2014-07-10

申请号：US13738541

申请日：2013-01-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jay S. BURNHAM ,  Damyon L. CORBIN ,  George A. DUNBAR, III ,  Jeffrey P. GAMBINO ,  John C. HALL ,  Kenneth F. MCAVEY, JR. ,  Charles F. MUSANTE ,  Anthony K. STAMPER

IPC: H01L21/768 ,  G06F17/50 ,  H01L23/498

CPC classification number: H01L23/49827 ,  G06F17/50 ,  H01L23/481 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0557 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/03

Abstract: A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.

Abstract translation: 本文公开了具有改善的金属附着力的背面金属接地层和制造方法。 该方法包括在衬底中形成至少一个穿硅通孔（TSV）。 该方法还包括在衬底的背面形成氧化物层。 所述方法还包括在所述氧化物层上形成金属化的接地平面并与所述至少一个TSV的暴露部分电接触。

公开(公告)号：US20140151899A1

公开(公告)日：2014-06-05

申请号：US14166274

申请日：2014-01-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Douglas D. COOLBAUGH ,  Keith E. DOWNES ,  Peter J. LINDGREN ,  Anthony K. STAMPER

IPC: H01L23/48

CPC classification number: H01L23/481 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76832 ,  H01L23/5223 ,  H01L28/60 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and a semiconductor device are provided. The semiconductor device includes a partial via etched in a stacked structure and a trough above the partial via. The method includes performing thick wiring using selective etching while etching the partial via to an etch stop layer.

Abstract translation: 提供了一种方法和半导体器件。 半导体器件包括以层叠结构蚀刻的部分通孔和部分通孔上方的槽。 该方法包括使用选择性蚀刻执行厚布线，同时将部分通孔蚀刻到蚀刻停止层。