STRESS-IMPROVED FLIP-CHIP SEMICONDUCTOR DEVICE HAVING HALF-ETCHED LEADFRAME
    1.
    发明申请
    STRESS-IMPROVED FLIP-CHIP SEMICONDUCTOR DEVICE HAVING HALF-ETCHED LEADFRAME 审中-公开
    应力改进的片状半导体器件,具有高度蚀刻的铅笔

    公开(公告)号:US20080135990A1

    公开(公告)日:2008-06-12

    申请号:US11567839

    申请日:2006-12-07

    IPC分类号: H01L23/495

    摘要: A semiconductor device (100) with a metal bump (203) on each interior contact pad (202) has a metallic leadframe with lead segments (220) with the first surface (220a) in one plane. The second surface (220b) is castellated across the segment width in two planes so that regions of a first segment thickness (240a) alternate with regions of a reduced (about 50%) second segment thickness (240b); the first thickness regions are in the locations corresponding to the chip interior contact pads (half-etched leadframe). The second segment surface faces the chip so that each first thickness region aligns with the corresponding chip bump. The chip bumps are attached to the corresponding second segment surface using reflow metal. Dependent on the orientation of the attached half-etched segment, thermomechanical stress concentrations away shift from the solder joints into the leadframe metal, or shear stress may reduced.

    摘要翻译: 在每个内部接触焊盘(202)上具有金属凸块(203)的半导体器件(100)具有金属引线框架,其具有在一个平面中的第一表面(220a)的引线段(220)。 所述第二表面(220b)在两个平面中跨越所述段宽度被浇注,使得第一段厚度(240a)的区域与减小的(约50%)第二段厚度(240b)的区域交替; 第一厚度区域位于对应于芯片内部接触焊盘(半蚀刻引线框架)的位置。 第二段表面面向芯片,使得每个第一厚度区域与相应的芯片凸块对准。 使用回流金属将芯片凸块附接到相应的第二段表面。 取决于连接的半蚀刻段的取向,从焊接点移动到引线框架金属中的热机械应力集中或剪切应力可能降低。

    Semiconductor package having integrated metal parts for thermal enhancement
    7.
    发明授权
    Semiconductor package having integrated metal parts for thermal enhancement 失效
    具有用于热增强的集成金属部件的半导体封装

    公开(公告)号:US07084494B2

    公开(公告)日:2006-08-01

    申请号:US10871645

    申请日:2004-06-18

    IPC分类号: H01L23/34

    摘要: A semiconductor device comprising a metallic leadframe (103) with a first surface (103a) and a second surface (103b). The leadframe includes a chip pad (104) and a plurality of segments (107); the chip pad is held by a plurality of straps (105), wherein each strap has a groove (106). A chip (101) is mounted on the chip pad and electrically connected to the segments. A heat spreader (110) is disposed on the first surface of the leadframe; the heat spreader has its central portion (110a) spaced above the chip connections (108), and also has positioning members (110b) extending outwardly from the edges of the central portion so that they rest in the grooves of the straps. Encapsulation material surrounds the chip, the electrical connections, and the spreader positioning members, and fills the space between the spreader and the chip, while leaving the second leadframe surface and the central spreader portion exposed.

    摘要翻译: 一种半导体器件,包括具有第一表面(103a)和第二表面(103b)的金属引线框架(103)。 引线框架包括芯片焊盘(104)和多个段(107); 所述芯片垫由多个带(105)保持,其中每个带具有凹槽(106)。 芯片(101)安装在芯片焊盘上并电连接到段上。 散热器(110)设置在引线框架的第一表面上; 散热器具有在芯片连接件(108)上方间隔开的中心部分(110a),并且还具有从中心部分的边缘向外延伸的定位构件(110b),使得它们搁置在带的凹槽中。 封装材料围绕芯片,电连接和扩展器定位构件,并且填充扩展器和芯片之间的空间,同时使第二引线框表面和中心扩展器部分露出。

    Contact structure for reliable metallic interconnection
    9.
    发明授权
    Contact structure for reliable metallic interconnection 有权
    接触结构可靠的金属互连

    公开(公告)号:US06696757B2

    公开(公告)日:2004-02-24

    申请号:US10178138

    申请日:2002-06-24

    IPC分类号: H01L2348

    摘要: A metallurgical interconnection for electronic devices is described, wherein the interconnection has first and second interconnection metals. The first metal is shaped to enlarge the contact area, thus providing maximum mechanical interconnection strength, and to stop nascent cracks, which propagate in the interconnection. Preferred shapes include castellation and corrugation. The castellation may include metal protrusions, which create wall-like obstacles in the interconnection zones of highest thermomechanical stress, whereby propagating cracks are stopped. The surface of the first metal has an affinity to form metallurgical contacts. The second metal is capable of reflowing. The first metal is preferably copper, and the second metal tin or a tin alloy.

    摘要翻译: 描述了用于电子设备的冶金互连,其中互连具有第一和第二互连金属。 第一金属被成形为扩大接触面积,从而提供最大的机械互连强度,并且停止在互连中传播的新生裂纹。 优选的形状包括城堡和波纹。 这个城堡可能包括金属突起,它们在最高的热机械应力的互连区域中形成壁状障碍物,从而停止传播裂缝。 第一金属的表面具有形成冶金接触的亲和力。 第二种金属能够回流。 第一金属优选为铜,第二金属锡或锡合金。