公开(公告)号：US09385076B2

公开(公告)日：2016-07-05

申请号：US13313677

申请日：2011-12-07

申请人： Hsien-Wei Chen ,  Yi-Wen Wu ,  Wen-Hsiung Lu

发明人： Hsien-Wei Chen ,  Yi-Wen Wu ,  Wen-Hsiung Lu

IPC分类号： H01L23/498 ,  H01L21/60 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49838 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/02165 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/1319

摘要： A semiconductor device includes a post-passivation interconnect (PPI) structure having a landing pad region. A polymer layer is formed on the PPI structure and patterned with a first opening and a second opening to expose portions of the landing pad region. The second opening is a ring-shaped opening surrounding the first opening. A bump structure is formed on the polymer layer to electrically connect the landing pad region through the first opening and the second opening.

摘要翻译： 半导体器件包括具有着陆焊盘区域的后钝化互连（PPI）结构。 聚合物层形成在PPI结构上并用第一开口和第二开口图案化以暴露着陆焊盘区域的部分。 第二开口是围绕第一开口的环形开口。 在聚合物层上形成凸起结构，以通过第一开口和第二开口电连接着陆垫区域。

公开(公告)号：US09196532B2

公开(公告)日：2015-11-24

申请号：US13529179

申请日：2012-06-21

申请人： Chia-Wei Tu ,  Yian-Liang Kuo ,  Wen-Hsiung Lu ,  Hsien-Wei Chen ,  Tsung-Fu Tsai

发明人： Chia-Wei Tu ,  Yian-Liang Kuo ,  Wen-Hsiung Lu ,  Hsien-Wei Chen ,  Tsung-Fu Tsai

IPC分类号： H01L21/78 ,  H01L23/522 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/3135 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/15 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/0502 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05599 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2224/05 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05552

摘要： A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

摘要翻译： 一种方法包括在晶片的衬底上形成电连接器，并模制聚合物层，至少一部分电连接器模制在聚合物层中。 执行第一锯切步骤以在聚合物层中形成沟槽。 在第一锯切步骤之后，执行第二锯切步骤以将晶片看成多个模具。

公开(公告)号：US08937388B2

公开(公告)日：2015-01-20

申请号：US13492285

申请日：2012-06-08

申请人： Yi-Wen Wu ,  Ming-Che Ho ,  Wen-Hsiung Lu ,  Chia-Wei Tu ,  Chung-Shi Liu

发明人： Yi-Wen Wu ,  Ming-Che Ho ,  Wen-Hsiung Lu ,  Chia-Wei Tu ,  Chung-Shi Liu

IPC分类号： H01L23/52

CPC分类号： H01L24/06 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02331 ,  H01L2224/02351 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06051 ,  H01L2224/10145 ,  H01L2224/11334 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/01023 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： Methods and apparatuses for wafer level packaging (WLP) of semiconductor devices are disclosed. A contact pad of a circuit may be connected to a solder bump by way of a post passivation interconnect (PPI) line and a PPI pad. The PPI pad may comprise a hollow part and an opening. The PPI pad may be formed together with the PPI line as one piece. The hollow part of the PPI pad can function to control the amount of solder flux used in the ball mounting process so that any extra amount of solder flux can escape from an opening of the solid part of the PPI pad. A solder ball can be mounted to the PPI pad directly without using any under bump metal (UBM) as a normal WLP package would need.

摘要翻译： 公开了用于半导体器件的晶片级封装（WLP）的方法和装置。 电路的接触焊盘可以通过后钝化互连（PPI）线和PPI焊盘连接到焊料凸块。 PPI垫可以包括中空部分和开口。 PPI垫可以与PPI线一起形成为一体。 PPI垫的中空部分可用于控制球安装过程中使用的焊剂量，以便任何额外量的焊剂可以从PPI焊盘的固体部分的开口逸出。 焊锡球可以直接安装到PPI焊盘，而不使用正常的WLP封装所需的任何下凸块金属（UBM）。

公开(公告)号：US09082776B2

公开(公告)日：2015-07-14

申请号：US13594544

申请日：2012-08-24

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Yi-Wen Wu ,  Yu-Peng Tsai ,  Chia-Wei Tu ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Yi-Wen Wu ,  Yu-Peng Tsai ,  Chia-Wei Tu ,  Chung-Shi Liu

IPC分类号： H01L23/52 ,  H01L21/44 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/56 ,  H01L21/566 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05541 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10126 ,  H01L2224/11831 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/206 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor package includes a semiconductor substrate, a contact pad overlying the semiconductor substrate, an interconnect layer overlying the contact pad, a passivation layer formed between the contact pad and the interconnect layer, a bump overlying the interconnect layer, and a protection layer overlying the interconnect layer and the passivation layer and covering a lower portion of the bump. The protection layer includes a curved surface region.

摘要翻译： 半导体封装包括半导体衬底，覆盖半导体衬底的接触焊盘，覆盖接触焊盘的互连层，形成在接触焊盘和互连层之间的钝化层，覆盖在互连层上的凸起以及覆盖在该互连层上的保护层 互连层和钝化层并覆盖凸块的下部。 保护层包括弯曲表面区域。

公开(公告)号：US20140054764A1

公开(公告)日：2014-02-27

申请号：US13594544

申请日：2012-08-24

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Yi-Wen Wu ,  Yu-Peng Tsai ,  Chia-Wei Tu ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Yi-Wen Wu ,  Yu-Peng Tsai ,  Chia-Wei Tu ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L21/56 ,  H01L21/566 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05541 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/10126 ,  H01L2224/11831 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/206 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor package includes a semiconductor substrate, a contact pad overlying the semiconductor substrate, an interconnect layer overlying the contact pad, a passivation layer formed between the contact pad and the interconnect layer, a bump overlying the interconnect layer, and a protection layer overlying the interconnect layer and the passivation layer and covering a lower portion of the bump. The protection layer includes a curved surface region.

摘要翻译： 半导体封装包括半导体衬底，覆盖半导体衬底的接触焊盘，覆盖接触焊盘的互连层，形成在接触焊盘和互连层之间的钝化层，覆盖在互连层上的凸起以及覆盖在该互连层上的保护层 互连层和钝化层并覆盖凸块的下部。 保护层包括弯曲表面区域。

公开(公告)号：US20130181338A1

公开(公告)日：2013-07-18

申请号：US13349405

申请日：2012-01-12

申请人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/20

CPC分类号： H01L23/3192 ,  H01L21/56 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02331 ,  H01L2224/03823 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/10126 ,  H01L2224/11464 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/73104 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A structure comprises a post passivation interconnect layer formed over a semiconductor substrate, a metal bump formed over the post passivation interconnect layer and a molding compound layer formed over the semiconductor substrate. A lower portion of the metal bump is embedded in the molding compound layer and a middle portion of the metal bump is surrounded by a concave meniscus molding compound protection layer.

摘要翻译： 一种结构包括形成在半导体衬底上的后钝化互连层，形成在后钝化互连层上的金属凸块和形成在半导体衬底上的模塑复合层。 金属凸块的下部嵌入在模塑料层中，并且金属凸块的中间部分被凹弯月面模塑料保护层包围。

公开(公告)号：US20120322255A1

公开(公告)日：2012-12-20

申请号：US13161303

申请日：2011-06-15

申请人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

发明人： Ming-Da Cheng ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Tzong-Hann Yang ,  Wen-Hsiung Lu ,  Zheng-Yi Lim ,  Yi-Wen Wu ,  Chung-Shi Liu

IPC分类号： H01L21/768

CPC分类号： H01L24/11 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1133 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1357 ,  H01L2224/13655 ,  H01L2224/13671 ,  H01L2224/13672 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81193 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2224/11

摘要： A system and method for forming metal bumps is provided. An embodiment comprises attaching conductive material to a carrier medium and then contacting the conductive material to conductive regions of a substrate. Portions of the conductive material are then bonded to the conductive regions using a bonding process to form conductive caps on the conductive regions, and residual conductive material and the carrier medium are removed. A reflow process is used to reflow the conductive caps into conductive bumps.

摘要翻译： 提供一种用于形成金属凸块的系统和方法。 一个实施例包括将导电材料附着到载体介质上，然后将导电材料接触到基底的导电区域。 然后使用接合工艺将导电材料的部分结合到导电区域，以在导电区域上形成导电盖，并且去除残留的导电材料和载体介质。 回流工艺用于将导电盖重新流到导电凸块中。

公开(公告)号：US08242011B2

公开(公告)日：2012-08-14

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11824 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13583 ,  H01L2224/13693 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在所述衬底上延伸的钝化层，所述钝化层在所述接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

公开(公告)号：US20130341800A1

公开(公告)日：2013-12-26

申请号：US13529179

申请日：2012-06-21

申请人： Chia-Wei Tu ,  Yian-Liang Kuo ,  Wen-Hsiung Lu ,  Hsien-Wei Chen ,  Tsung-Fu Tsai

发明人： Chia-Wei Tu ,  Yian-Liang Kuo ,  Wen-Hsiung Lu ,  Hsien-Wei Chen ,  Tsung-Fu Tsai

IPC分类号： H01L21/78 ,  H01L23/522

CPC分类号： H01L23/3135 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3157 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/15 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/0502 ,  H01L2224/05022 ,  H01L2224/05099 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05599 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2224/05 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2224/05552

摘要： A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

摘要翻译： 一种方法包括在晶片的衬底上形成电连接器，并模制聚合物层，至少一部分电连接器模制在聚合物层中。 执行第一锯切步骤以在聚合物层中形成沟槽。 在第一锯切步骤之后，执行第二锯切步骤以将晶片看成多个模具。

公开(公告)号：US09607921B2

公开(公告)日：2017-03-28

申请号：US13349405

申请日：2012-01-12

申请人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Yi-Wen Wu ,  Chih-Wei Lin ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L23/3192 ,  H01L21/56 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3157 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02331 ,  H01L2224/03823 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/10126 ,  H01L2224/11464 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/73104 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A structure comprises a post passivation interconnect layer formed over a semiconductor substrate, a metal bump formed over the post passivation interconnect layer and a molding compound layer formed over the semiconductor substrate. A lower portion of the metal bump is embedded in the molding compound layer and a middle portion of the metal bump is surrounded by a concave meniscus molding compound protection layer.