公开(公告)号：US07888184B2

公开(公告)日：2011-02-15

申请号：US12473233

申请日：2009-05-27

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

IPC分类号： H01L21/00 ,  H01L23/10

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/82 ,  H01L2924/00

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a shaped platform with a conductive post; mounting the shaped platform with the conductive post over a temporary carrier; mounting an integrated circuit device over the temporary carrier; encapsulating the conductive post and the integrated circuit device; removing a portion of the shaped platform isolating the conductive post; and removing the temporary carrier.

摘要翻译： 一种制造集成电路封装系统的方法，包括：提供具有导电柱的成形平台; 将具有导电柱的成形平台安装在临时载体上; 将集成电路装置安装在临时载体上; 封装导电柱和集成电路器件; 去除隔离导电柱的成形平台的一部分; 并移除临时载体。

公开(公告)号：US20090315170A1

公开(公告)日：2009-12-24

申请号：US12473233

申请日：2009-05-27

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

IPC分类号： H01L23/50 ,  H01L21/56 ,  H01L21/98 ,  H01L21/50

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/82 ,  H01L2924/00

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a shaped platform with a conductive post; mounting the shaped platform with the conductive post over a temporary carrier; mounting an integrated circuit device over the temporary carrier; encapsulating the conductive post and the integrated circuit device; removing a portion of the shaped platform isolating the conductive post; and removing the temporary carrier.

摘要翻译： 一种制造集成电路封装系统的方法，包括：提供具有导电柱的成形平台; 将具有导电柱的成形平台安装在临时载体上; 将集成电路装置安装在临时载体上; 封装导电柱和集成电路器件; 去除隔离导电柱的成形平台的一部分; 并移除临时载体。

公开(公告)号：US20110127678A1

公开(公告)日：2011-06-02

申请号：US13023293

申请日：2011-02-08

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

IPC分类号： H01L23/50

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/82 ,  H01L2924/00

摘要： An integrated circuit packaging system includes: an integrated circuit device; a conductive post adjacent the integrated circuit device, the conductive post with a contact surface having characteristics of a shaped platform removed; and an encapsulant around the conductive post and the integrated circuit device with the conductive post extending through the encapsulant and each end of the conductive post exposed from the encapsulant.

摘要翻译： 一种集成电路封装系统，包括：集成电路器件; 邻近集成电路器件的导电柱，具有去除成形平台特征的接触表面的导电柱; 以及围绕导电柱和集成电路器件的密封剂，其中导电柱延伸穿过密封剂并且从密封剂暴露出的导电柱的每个端部。

公开(公告)号：US08957530B2

公开(公告)日：2015-02-17

申请号：US13023293

申请日：2011-02-08

申请人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

发明人： Il Kwon Shim ,  Seng Guan Chow ,  Heap Hoe Kuan ,  Seung Uk Yoon ,  Jong-Woo Ha

IPC分类号： H01L23/02 ,  H01L23/48 ,  H01L23/00 ,  H01L21/683 ,  H01L25/065 ,  H01L25/10

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/82 ,  H01L2924/00

摘要： An integrated circuit packaging system includes: an integrated circuit device; a conductive post adjacent the integrated circuit device, the conductive post with a contact surface having characteristics of a shaped platform removed; and an encapsulant around the conductive post and the integrated circuit device with the conductive post extending through the encapsulant and each end of the conductive post exposed from the encapsulant.

摘要翻译： 一种集成电路封装系统，包括：集成电路器件; 邻近集成电路器件的导电柱，具有去除成形平台特征的接触表面的导电柱; 以及围绕导电柱和集成电路器件的密封剂，其中导电柱延伸穿过密封剂并且从密封剂暴露出的导电柱的每个端部。

公开(公告)号：US08354297B2

公开(公告)日：2013-01-15

申请号：US12876013

申请日：2010-09-03

申请人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L21/44

CPC分类号： H01L23/49811 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/18 ,  H01L2224/2518 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/8203 ,  H01L2224/92124 ,  H01L2224/9222 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/82 ,  H01L2224/81

摘要： A semiconductor device has a first semiconductor die mounted over a carrier. Wettable contact pads can be formed over the carrier. A second semiconductor die is mounted over the first semiconductor die. The second die is laterally offset with respect to the first die. An electrical interconnect is formed between an overlapping portion of the first die and second die. A plurality of first conductive pillars is disposed over the first die. A plurality of second conductive pillars is disposed over the second die. An encapsulant is deposited over the first and second die and first and second conductive pillars. A first interconnect structure is formed over the encapsulant, first conductive pillars, and second die. The carrier is removed. A second interconnect structure is formed over the encapsulant, second conductive pillars, and first die. A third conductive pillar is formed between the first and second build-up interconnect structures.

摘要翻译： 半导体器件具有安装在载体上的第一半导体管芯。 可以在载体上形成可润湿的接触垫。 第二半导体管芯安装在第一半导体管芯上。 第二模具相对于第一模具横向偏移。 在第一管芯和第二管芯的重叠部分之间形成电互连。 多个第一导电柱设置在第一管芯上方。 多个第二导电柱设置在第二管芯上。 密封剂沉积在第一和第二管芯以及第一和第二导电柱上。 在密封剂，第一导电柱和第二模上形成第一互连结构。 载体被移除。 在密封剂，第二导电柱和第一模上形成第二互连结构。 在第一和第二堆积互连结构之间形成第三导电柱。

公开(公告)号：US20100148336A1

公开(公告)日：2010-06-17

申请号：US12334347

申请日：2008-12-12

申请人： Byung Tai Do ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Byung Tai Do ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L23/12 ,  H01L21/768 ,  H01L21/56 ,  H01L25/065

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L23/13 ,  H01L23/147 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a silicon substrate having a circuitry layer; creating a partial via through the circuitry layer; filling the partial via with a plug having a bottom surface; creating a recess that is angled outward and exposes the bottom surface of the plug; and coating the recess with a recess-insulation-layer while leaving the bottom surface of the plug exposed.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供具有电路层的硅衬底; 通过电路层创建部分通孔; 用具有底表面的塞子填充部分通孔; 产生一个向外成角度并露出插头底面的凹槽; 并且在使凹部的下表面暴露的同时用凹部绝缘层涂覆凹部。

公开(公告)号：US08383457B2

公开(公告)日：2013-02-26

申请号：US12875981

申请日：2010-09-03

申请人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L21/00

CPC分类号： H01L25/50 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24101 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/25171 ,  H01L2224/27002 ,  H01L2224/29 ,  H01L2224/2902 ,  H01L2224/29101 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32155 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/078 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H05K1/186 ,  H05K3/007 ,  H05K2201/10674 ,  H01L2224/81 ,  H01L2924/01014 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/03 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

摘要翻译： 半导体器件具有安装在载体上的第一半导体管芯。 插入器框架在插入器框架中具有开口，并且在内插器框架上形成多个导电柱。 插入器安装在载体上，并且第一管芯与设置在管芯周围的导电柱相连。 可以在插入器框架中形成空腔以容纳第一模具的一部分。 密封剂通过载体和第一模具上的插入器框架中的开口沉积。 或者，密封剂沉积在载体上并且第一模头和插入器框架被压靠在密封剂上。 过多的密封剂通过插入器框架中的开口离开。 载体被移除。 在密封剂和第一模具上形成互连结构。 第二半导体管芯可以安装在第一管芯上方或内插架框架上。

公开(公告)号：US20120056329A1

公开(公告)日：2012-03-08

申请号：US12875981

申请日：2010-09-03

申请人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L25/50 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/25 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06131 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24101 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/25171 ,  H01L2224/27002 ,  H01L2224/29 ,  H01L2224/2902 ,  H01L2224/29101 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32155 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82104 ,  H01L2224/82106 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/94 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06548 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/107 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/078 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H05K1/186 ,  H05K3/007 ,  H05K2201/10674 ,  H01L2224/81 ,  H01L2924/01014 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/03 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.

摘要翻译： 半导体器件具有安装在载体上的第一半导体管芯。 插入器框架在插入器框架中具有开口，并且在内插器框架上形成多个导电柱。 插入器安装在载体上，并且第一管芯与设置在管芯周围的导电柱相连。 可以在插入器框架中形成空腔以容纳第一模具的一部分。 密封剂通过载体和第一模具上的插入器框架中的开口沉积。 或者，密封剂沉积在载体上并且第一模头和插入器框架被压靠在密封剂上。 过多的密封剂通过插入器框架中的开口离开。 载体被移除。 在密封剂和第一模具上形成互连结构。 第二半导体管芯可以安装在第一管芯上方或内插架框架上。

公开(公告)号：US20120056316A1

公开(公告)日：2012-03-08

申请号：US12876013

申请日：2010-09-03

申请人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Reza A. Pagaila ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L23/49811 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/18 ,  H01L2224/2518 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/8203 ,  H01L2224/92124 ,  H01L2224/9222 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/82 ,  H01L2224/81

摘要： A semiconductor device has a first semiconductor die mounted over a carrier. Wettable contact pads can be formed over the carrier. A second semiconductor die is mounted over the first semiconductor die. The second die is laterally offset with respect to the first die. An electrical interconnect is formed between an overlapping portion of the first die and second die. A plurality of first conductive pillars is disposed over the first die. A plurality of second conductive pillars is disposed over the second die. An encapsulant is deposited over the first and second die and first and second conductive pillars. A first interconnect structure is formed over the encapsulant, first conductive pillars, and second die. The carrier is removed. A second interconnect structure is formed over the encapsulant, second conductive pillars, and first die. A third conductive pillar is formed between the first and second build-up interconnect structures.

摘要翻译： 半导体器件具有安装在载体上的第一半导体管芯。 可以在载体上形成可润湿的接触垫。 第二半导体管芯安装在第一半导体管芯上。 第二模具相对于第一模具横向偏移。 在第一管芯和第二管芯的重叠部分之间形成电互连。 多个第一导电柱设置在第一管芯上方。 多个第二导电柱设置在第二管芯上。 密封剂沉积在第一和第二管芯以及第一和第二导电柱上。 在密封剂，第一导电柱和第二模上形成第一互连结构。 载体被移除。 在密封剂，第二导电柱和第一模上形成第二互连结构。 在第一和第二堆积互连结构之间形成第三导电柱。

公开(公告)号：US07786008B2

公开(公告)日：2010-08-31

申请号：US12334347

申请日：2008-12-12

申请人： Byung Tai Do ,  Seng Guan Chow ,  Seung Uk Yoon

发明人： Byung Tai Do ,  Seng Guan Chow ,  Seung Uk Yoon

IPC分类号： H01L21/44 ,  H01L23/04

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L23/13 ,  H01L23/147 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a silicon substrate having a circuitry layer; creating a partial via through the circuitry layer; filling the partial via with a plug having a bottom surface; creating a recess that is angled outward and exposes the bottom surface of the plug; and coating the recess with a recess-insulation-layer while leaving the bottom surface of the plug exposed.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供具有电路层的硅衬底; 通过电路层创建部分通孔; 用具有底表面的塞子填充部分通孔; 产生一个向外成角度并露出插头底面的凹槽; 并且在使凹部的下表面暴露的同时用凹部绝缘层涂覆凹部。