摘要:
An electronic circuit device includes a substrate, a wiring layer formed on the surface of the substrate and essentially consisting of at least one metal selected from the group consisting of gold, copper, tin, and aluminum, a bump formed on the wiring layer and essentially consisting of at least one metal selected from the group consisting of gold, copper, and aluminum, and a micro electronic element formed on the bump, wherein solid-phase diffusion bonding is performed at least either between the wiring layer and the bump or between the bump and an electrode of the micro electronic element.
摘要:
An electronic circuit device comprising a printed wiring board having a major surface and pads provided on the major surface of the printed wiring board, a plurality of electrodes provided partly on at least one major surface of the leadless component and partly on sides of the leadless component, a plurality of bumps provided on the pads, providing a gap between the major surface of the printed wiring board and the major surface of the leadless component, and electrically connecting those parts of the electrodes which are provided on the major surface of the leadless component to the pads, and a plurality of electrically conductive members integral with the bumps, extending from the bumps to those parts of the electrodes which are provided on the sides of the leadless component.
摘要:
The image display apparatus is capable of displaying an image on a large screen in which non-display regions are completely eliminated or minimized. The image display apparatus comprises an opposite board in which common electrodes made of transparent conductive resin are respectively formed on both surfaces of a transparent substrate. A plurality of array boards in each of which semiconductor element and a signal line are formed on a transparent substrate are arranged on both surfaces of the opposite board, such that display regions of end portions of the array boards face each other a sandwich of the opposite board inserted therebetween. Frame-like sealing members made of transparent resin are respectively inserted in clearances between the opposite board and the array boards. Liquid crystal is enclosed in each of spaces surrounded by the frame-like sealing members between the opposite board and the array boards.
摘要:
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through a bump electrode on the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler. The resin is constituted by a first resin disposed in a region surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, and by a second resin disposed in a region not surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, the first and second resins being distinct from each other in at least one feature selected from a content, a maximum particle diameter and an average particle diameter of the filler.
摘要:
A semiconductor device comprising a wiring circuit board and a semiconductor chip mounted through a bump electrode on the circuit board, a space between the circuit board and the semiconductor chip as well as a periphery of the semiconductor chip being encapsulated with a resin containing a filler. The resin is constituted by a first resin disposed in a region surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, and by a second resin disposed in a region not surrounded by bump electrodes positioned on the outermost periphery of the semiconductor chip, the first and second resins being distinct from each other in at least one feature selected from a content, a maximum particle diameter and an average particle diameter of the filler.
摘要:
A semiconductor device contains a semiconductor chip and a circuit board. The chip has a first surface at which the main region is formed. On the surface, a plurality of chip electrodes and a perimeter electrode surrounding the chip electrodes are formed. Bumps and a wall member made of solder metal are formed on the chip electrodes and frame-shaped electrode, respectively. The circuit board has a first surface facing the first surface of the chip. On the first surface of the circuit board, a plurality of board electrodes and a perimeter electrode are placed so as to correspond to the chip electrodes and the perimeter electrode. In a state where the chip and the board face each other, heat treatment is performed to connect the bumps and wall member to the board simultaneously by reflow. The wall member connects the chip to the board while surrounding the main region and the bumps continuously, to form essentially a closed space between the chip and the board.
摘要:
A display device has an array formed on a substrate including a cathode wiring line layer, a gate wiring line layer and an insulating layer for electrically insulating the cathode wiring line layer and the gate wiring line layer from each other. Holes are formed at the crossing portion between the cathode wiring line layer and the gate wiring line layer so as to penetrate through the insulating layer, and resistive layer and an emitter layer are provided in the holes. The resistive layer has such a structure that conductive fine particles are dispersed in a base material of insulating fine particles, and the emitter layer is formed of a fine particle material. The insulating layer between the cathode electrode lines and the gate electrodes is formed of a silicon oxide film containing fluorine. When a large number of elements are formed over a large area in an electron emission device using fine particle emitters, there can be provided electron emission elements which can suppress the unevenness of the electron emission amount. According to the present invention, there can be provided a large-area and uniform display device which can be operated with a low driving voltage, and have a long lifetime.
摘要:
A display device has an array formed on a substrate including a cathode wiring line layer, a gate wiring line layer and an insulating layer for electrically insulating the cathode wiring line layer and the gate wiring line layer from each other. Holes are formed at the crossing portion between the cathode wiring line layer and the gate wiring line layer so as to penetrate through the insulating layer, and resistive layer and an emitter layer are provided in the holes. The resistive layer has such a structure that conductive fine particles are dispersed in a base material of insulating fine particles, and the emitter layer is formed of a fine particle material. The insulating layer between the cathode electrode lines and the gate electrodes is formed of a silicon oxide film containing fluorine. When a large number of elements are formed over a large area in an electron emission device using fine particle emitters, there can be provided electron emission elements which can suppress the unevenness of the electron emission amount. According to the present invention, there can be provided a large-area and uniform display device which can be operated with a low driving voltage, and have a long lifetime.
摘要:
There is provided a field emission type display which is capable of suppressing deterioration of image quality which otherwise occurs due to stepwise cuts and to the increase of wiring resistance caused by a thin width of a cathode line and which causes less failures. The display includes a plurality of cathode lines having an equal line width within the pixel and is structurally based on a multiple gradation representing a scheme of controlling spatial gradation display by changing the number of field emission type emitters to be driven by changing the number of cathode lines to be selected.
摘要:
In a semiconductor device including a substrate having a wiring layer formed on its major surface and a semiconductor element having an electrode formed on its major surface in which a face-down bonding is achieved with the major surface of the semiconductor element oppositely facing that major surface of the semiconductor substrate which is located opposite to the electrode on the semiconductor element, first bumps formed of gold are formed on the electrode of the semiconductor element, second bumps formed of an indium/tin alloy are formed on the first bumps and an electrical and mechanical bond is achieved, by the second bumps, between the first bumps and the wiring layer in which case the second bumps are heated to an extent not exceeding the melting point of the second bumps.