公开(公告)号：US20170242955A1

公开(公告)日：2017-08-24

申请号：US15403203

申请日：2017-01-11

Applicant: Renesas Electronics Corporation

Inventor： Yoshihiro ONO ,  Kenji SAKATA

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5072 ,  G06F2217/12 ,  H01L21/00 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/265

Abstract: A method includes: a first step of designing the semiconductor device by using CAD and outputting design CAD data; a second step of correcting the design CAD data to correspond to a matching trial object of the semiconductor device and outputting corrected CAD data; a third step of manufacturing the semiconductor device based on the design CAD data; a fourth step of capturing a tomographic image of the manufactured semiconductor device; a fifth step of comparing a shape and a dimension of a unit included in the semiconductor device between the tomographic image and the corrected CAD data; and a sixth step of determining that the matching trial object is failed when a difference therebetween as a result of the comparison in the fifth step is equal to or larger than a predetermined amount.

公开(公告)号：US20160260680A1

公开(公告)日：2016-09-08

申请号：US15058282

申请日：2016-03-02

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kenji SAKATA ,  Tsuyoshi KIDA ,  Yoshihiro ONO

IPC: H01L23/00

CPC classification number: H01L24/81 ,  H01L23/147 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0652 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16238 ,  H01L2224/2732 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75251 ,  H01L2224/75305 ,  H01L2224/7565 ,  H01L2224/75745 ,  H01L2224/81022 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81355 ,  H01L2224/81444 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81862 ,  H01L2224/81986 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/9205 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A method for manufacturing a semiconductor device includes the steps of mounting a Si interposer over a printed wiring substrate, plasma-cleaning an upper surface of the Si interposer, disposing an NCF over the upper surface of the Si interposer, and mounting a semiconductor chip over the upper surface of the Si interposer through the NCF. Also, the method includes the step of electrically coupling each of plural electrodes of a second substrate and each of plural electrode pads of the semiconductor chip with each other through plural bump electrodes by reflow, and the surface of the Si interposer is plasma-cleaned before attaching the NCF to the Si interposer.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：将Si插入件安装在印刷布线基板上，等离子体清洁Si插入件的上表面，将NCF设置在Si插入件的上表面上，并将半导体芯片安装在 Si插入件的上表面通过NCF。 此外，该方法包括通过多次凸起电极通过回流而将第二基板的多个电极和半导体芯片的多个电极焊盘中的每一个彼此电耦合的步骤，并且将Si插入件的表面等离子体清洁 将NCF连接到Si插入器。

公开(公告)号：US20150179623A1

公开(公告)日：2015-06-25

申请号：US14567876

申请日：2014-12-11

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yoshihiro ONO ,  Shinji WATANABE ,  Tsuyoshi KIDA ,  Kentaro MORI ,  Kenji SAKATA ,  Yusuke YAMADA

IPC: H01L25/00 ,  H01L23/00 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/27334 ,  H01L2224/29015 ,  H01L2224/29036 ,  H01L2224/2919 ,  H01L2224/321 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/743 ,  H01L2224/75252 ,  H01L2224/75303 ,  H01L2224/75318 ,  H01L2224/75745 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2224/81 ,  H01L2224/83

Abstract: To provide a semiconductor device having improved reliability.A semiconductor chip is conveyed onto a chip mounting region of a wiring board by means of a bonding jig to electrically couple the semiconductor chip and the wiring board to each other. The bonding jig for mounting the semiconductor chip on the wiring board is equipped with a retention portion for adsorbing and retaining a logic chip, a pressing portion for pressing against the back surface of the semiconductor chip, and a sealing portion to be firmly attached to the peripheral edge portion of the back surface of the semiconductor chip. The surface of the sealing portion to be firmly attached to the back surface of the semiconductor chip is made of a resin.

Abstract translation: 提供具有提高的可靠性的半导体器件。 通过接合夹具将半导体芯片传送到布线板的芯片安装区域，以将半导体芯片和布线板彼此电耦合。 用于将半导体芯片安装在布线板上的接合夹具配备有用于吸附和保持逻辑芯片的保持部分，用于按压半导体芯片的背面的按压部分和牢固地附接到半导体芯片的密封部分 半导体芯片的背面的周边部分。 要牢固地连接到半导体芯片的背面的密封部分的表面由树脂制成。

公开(公告)号：US20170047296A1

公开(公告)日：2017-02-16

申请号：US15304015

申请日：2014-04-14

Applicant: Renesas Electronics Corporation

Inventor： Shinji WATANABE ,  Tsuyoshi KIDA ,  Yoshihiro ONO ,  Kentaro MORI ,  Kenji SAKATA ,  Yusuke YAMADA

IPC: H01L23/00 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/31 ,  H01L23/3128 ,  H01L24/02 ,  H01L24/16 ,  H01L24/42 ,  H01L24/97 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: In a semiconductor device according to an embodiment, a second semiconductor chip is mounted on a first rear surface of a first semiconductor chip. Also, the first rear surface of the first semiconductor chip includes a first region in which a plurality of first rear electrodes electrically connected to the second semiconductor chip via a protrusion electrode are formed and a second region which is located on a peripheral side relative to the first region and in which a first metal pattern is formed. In addition, a protrusion height of the first metal pattern with respect to the first rear surface is smaller than a protrusion height of each of the plurality of first rear electrodes with respect to the first rear surface.

Abstract translation: 在根据实施例的半导体器件中，第二半导体芯片安装在第一半导体芯片的第一后表面上。 此外，第一半导体芯片的第一后表面包括第一区域，其中形成经由突起电极电连接到第二半导体芯片的多个第一后部电极，并且第二区域位于相对于第二半导体芯片的外围侧 第一区域，并且其中形成第一金属图案。 此外，第一金属图案相对于第一后表面的突出高度小于多个第一后电极中的每一个相对于第一后表面的突出高度。

公开(公告)号：US20150243614A1

公开(公告)日：2015-08-27

申请号：US14711767

申请日：2015-05-13

Applicant: Renesas Electronics Corporation

Inventor： Yoshihiro ONO ,  Tsuyoshi KIDA ,  Kenji SAKATA

IPC: H01L23/00 ,  H01L23/498

CPC classification number: H01L24/06 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49861 ,  H01L23/49894 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02163 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13155 ,  H01L2224/14104 ,  H01L2224/14164 ,  H01L2224/14179 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/325 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06558 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014

Abstract: A semiconductor chip and a wiring board are coupled to each other through conductor posts. The centers of conductor posts situated above openings at the outermost periphery shift from the centers of the openings in a direction away from the center of the semiconductor chip. When a region where each of the conductor posts and an insulating layer are overlapped with each other is designated as an overlapped region, the width of the overlapped region more on the inner side than the opening is smaller than the width of the overlapped region more on the outer side than the opening. Thus, while stress applied to the conductor posts is relaxed, coupling reliability between the semiconductor chip and the wiring board is retained.

Abstract translation: 半导体芯片和布线板通过导体柱彼此耦合。 位于最外周的开口上方的导体柱的中心在远离半导体芯片的中心的方向上从开口的中心偏移。 当每个导体柱和绝缘层彼此重叠的区域被指定为重叠区域时，内侧上比开口更多的重叠区域的宽度小于重叠区域的宽度 外侧比开口。 因此，在施加到导体柱的应力松弛的同时，保持了半导体芯片和布线板之间的耦合可靠性。

公开(公告)号：US20150380345A1

公开(公告)日：2015-12-31

申请号：US14750009

申请日：2015-06-25

Applicant: Renesas Electronics Corporation

Inventor： Yoshihiro ONO ,  Nobuhiro KINOSHITA ,  Tsuyoshi KIDA ,  Jumpei KONNO ,  Kenji SAKATA ,  Kentaro MORI ,  Shinji BABA

IPC: H01L23/495 ,  H01L23/544

CPC classification number: H01L23/49568 ,  H01L22/32 ,  H01L23/3128 ,  H01L23/4951 ,  H01L23/4952 ,  H01L23/49558 ,  H01L23/49811 ,  H01L23/544 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/45 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/06153 ,  H01L2224/06155 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16105 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8113 ,  H01L2224/81191 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2924/00011 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/32245 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01074 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2224/45147

Abstract: The reliability of a semiconductor device is improved. A probe mark is formed on a probe region of a pad covered with a protective insulating film. And, a pillar-shaped electrode has a first portion formed on an opening region and a second portion that is extended over the probe region from the upper portion of the opening region. At this time, a center position of the opening region is shifted from a center position of the pillar-shaped electrode that is opposed to a bonding finger.

Abstract translation: 提高了半导体器件的可靠性。 在覆盖有保护绝缘膜的焊盘的探针区域上形成探针标记。 并且，柱状电极具有形成在开口区域上的第一部分和从开口区域的上部在探针区域上延伸的第二部分。 此时，开口区域的中心位置从与接合手指相对的柱状电极的中心位置偏移。