公开(公告)号：US20140252631A9

公开(公告)日：2014-09-11

申请号：US12794598

申请日：2010-06-04

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L21/50

CPC分类号： H01L23/5389 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/214 ,  H01L2224/221 ,  H01L2224/48091 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2224/13099 ,  H01L2224/19 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a plurality of contact pads. A sacrificial adhesive is deposited over the contact pads. Alternatively, the sacrificial adhesive is deposited over the carrier. An underfill material can be formed between the contact pads. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier such that the sacrificial adhesive is disposed between the contact pads and temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier and sacrificial adhesive is removed to leave a via over the contact pads. An interconnect structure is formed over the encapsulant. The interconnect structure includes a conductive layer which extends into the via for electrical connection to the contact pads. The semiconductor die is offset from the interconnect structure by a height of the sacrificial adhesive.

摘要翻译： 半导体晶片包含多个具有多个接触焊盘的半导体管芯。 牺牲粘合剂沉积在接触垫上。 或者，牺牲粘合剂沉积在载体上。 可以在接触垫之间形成底部填充材料。 单个半导体晶片以分离半导体管芯。 将半导体管芯安装到临时载体上，使得牺牲粘合剂设置在接触垫和临时载体之间。 密封剂沉积在半导体管芯和载体上。 去除载体和牺牲粘合剂以在接触垫上留下通孔。 在密封剂上形成互连结构。 互连结构包括延伸到通孔中以与接触焊盘电连接的导电层。 半导体管芯通过牺牲粘合剂的高度与互连结构偏移。

公开(公告)号：US08288201B2

公开(公告)日：2012-10-16

申请号：US12868334

申请日：2010-08-25

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L21/44 ,  H01L21/50

CPC分类号： H01L21/561 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16265 ,  H01L2224/48227 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor die has first and second discrete semiconductor components mounted over a plurality of wettable contact pads formed on a carrier. Conductive pillars are formed over the wettable contact pads. A semiconductor die is mounted to the conductive pillars over the first discrete components. The conductive pillars provide vertical stand-off of the semiconductor die as headroom for the first discrete components. The second discrete components are disposed outside a footprint of the semiconductor die. Conductive TSV can be formed through the semiconductor die. An encapsulant is deposited over the semiconductor die and first and second discrete components. The wettable contact pads reduce die and discrete component shifting during encapsulation. A portion of a back surface of the semiconductor die is removed to reduce package thickness. An interconnect structure is formed over the encapsulant and semiconductor die. Third discrete semiconductor components can be mounted over the semiconductor die.

摘要翻译： 半导体管芯具有安装在形成在载体上的多个可湿性接触焊盘上的第一和第二分立半导体部件。 导电柱形成在可湿性接触垫上。 半导体管芯通过第一分立元件安装到导电柱上。 导电柱提供半导体管芯的垂直间隔作为第一分立元件的余量。 第二分立元件设置在半导体管芯的占位面之外。 可以通过半导体管芯形成导电TSV。 密封剂沉积在半导体管芯和第一和第二分立元件上。 可湿式接触垫在封装期间减少管芯和分立元件的移动。 去除半导体管芯的后表面的一部分以减小封装厚度。 在密封剂和半导体管芯上形成互连结构。 第三分立半导体部件可以安装在半导体管芯上。

公开(公告)号：US20120248596A1

公开(公告)日：2012-10-04

申请号：US13492687

申请日：2012-06-08

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/36 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L23/5389 ,  H01L21/561 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L23/552 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24195 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/3511 ,  H05K1/0203 ,  H05K1/186 ,  H05K2201/09772 ,  H01L2924/01014 ,  H01L2924/05432 ,  H01L2924/0542 ,  H01L2924/0503 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.

摘要翻译： 半导体器件具有形成在临时载体上的多个开口的导热层。 导热层包括非导电材料。 半导体管芯具有形成在管芯上的接触焊盘上的多个凸块。 半导体管芯安装在导热层上，使得凸块至少部分地设置在导热层的开口内。 密封剂沉积在管芯和导热层上。 移除临时载体以暴露凸块。 在密封剂，半导体管芯和凸块之上形成第一互连结构。 凸块电连接到第一互连结构。 可以在半导体管芯上形成散热器或屏蔽层。 第二互连结构可以形成在密封剂之上并且通过形成在密封剂中的导电通孔电连接到第一互连结构。

公开(公告)号：US20120104623A1

公开(公告)日：2012-05-03

申请号：US12914878

申请日：2010-10-28

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/06 ,  H01L21/56

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/8091 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655

摘要： A semiconductor substrate has a plurality of different size recesses formed in the substrate to provide a stepped interposer. A conductive via can be formed through the stepped interposer. An insulating layer follows a contour of the stepped interposer. A conductive layer is formed over the insulating layer following the contour of the stepped interposer. A first semiconductor die is partially disposed in a first recess and electrically connected to the conductive layer. A second semiconductor die is partially disposed in a second recess and electrically connected to the conductive layer. The first semiconductor die is electrically connected to the second semiconductor die through the conductive layer. The first and second semiconductor die can be flipchip type semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of the stepped interposer can be removed to reduce thickness.

摘要翻译： 半导体衬底具有形成在衬底中的多个不同尺寸的凹部以提供阶梯式插入器。 可以通过阶梯式内插器形成导电通孔。 绝缘层遵循阶梯式插入器的轮廓。 在阶梯式插入件的轮廓之后，在绝缘层之上形成导电层。 第一半导体管芯部分地设置在第一凹部中并电连接到导电层。 第二半导体管芯部分地设置在第二凹部中并电连接到导电层。 第一半导体管芯通过导电层与第二半导体管芯电连接。 第一和第二半导体管芯可以是倒装芯片型半导体管芯。 密封剂沉积在第一和第二半导体管芯上。 可以去除部分阶梯式内插器以减小厚度。

公开(公告)号：US20110068459A1

公开(公告)日：2011-03-24

申请号：US12714190

申请日：2010-02-26

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo ,  HeeJo Chi

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo ,  HeeJo Chi

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L21/60

CPC分类号： H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48158 ,  H01L2224/4816 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.

摘要翻译： 半导体器件具有安装在载体上的插入器。 插入器包括在安装到载体之前或之后形成的TSV。 在插入器中形成开口。 插入器可以具有通过第一阶梯部分的第一垂直传导路径和穿过第二阶梯部分的第二垂直传导路径的两级台阶部分。 第一和第二半导体管芯安装在插入件上。 第二管芯设置在插入件的开口内。 分立半导体部件可以安装在插入器上。 可以通过第二管芯或密封剂形成导电通孔。 密封剂沉积在第一和第二管芯和插入件上。 插入器的一部分可以被去除，使得密封剂围绕半导体器件的一侧形成。 互连结构形成在插入件和第二管芯上。

公开(公告)号：US09875911B2

公开(公告)日：2018-01-23

申请号：US12714190

申请日：2010-02-26

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo ,  HeeJo Chi

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo ,  HeeJo Chi

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L21/683 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L25/10 ,  H01L25/16 ,  H01L23/00 ,  H01L23/552

CPC分类号： H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48157 ,  H01L2224/48158 ,  H01L2224/4816 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/207 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： A semiconductor device has an interposer mounted over a carrier. The interposer includes TSV formed either prior to or after mounting to the carrier. An opening is formed in the interposer. The interposer can have two-level stepped portions with a first vertical conduction path through a first stepped portion and second vertical conduction path through a second stepped portion. A first and second semiconductor die are mounted over the interposer. The second die is disposed within the opening of the interposer. A discrete semiconductor component can be mounted over the interposer. A conductive via can be formed through the second die or encapsulant. An encapsulant is deposited over the first and second die and interposer. A portion of the interposer can be removed to that the encapsulant forms around a side of the semiconductor device. An interconnect structure is formed over the interposer and second die.

公开(公告)号：US09337116B2

公开(公告)日：2016-05-10

申请号：US12914878

申请日：2010-10-28

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/31 ,  H01L23/13 ,  H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/498 ,  H01L25/03 ,  H01L25/10

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1515 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/8091 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655

摘要： A semiconductor substrate has a plurality of different size recesses formed in the substrate to provide a stepped interposer. A conductive via can be formed through the stepped interposer. An insulating layer follows a contour of the stepped interposer. A conductive layer is formed over the insulating layer following the contour of the stepped interposer. A first semiconductor die is partially disposed in a first recess and electrically connected to the conductive layer. A second semiconductor die is partially disposed in a second recess and electrically connected to the conductive layer. The first semiconductor die is electrically connected to the second semiconductor die through the conductive layer. The first and second semiconductor die can be flipchip type semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of the stepped interposer can be removed to reduce thickness.

摘要翻译： 半导体衬底具有形成在衬底中的多个不同尺寸的凹部以提供阶梯式插入器。 可以通过阶梯式内插器形成导电通孔。 绝缘层遵循阶梯式插入器的轮廓。 在阶梯式插入件的轮廓之后，在绝缘层之上形成导电层。 第一半导体管芯部分地设置在第一凹部中并电连接到导电层。 第二半导体管芯部分地设置在第二凹部中并电连接到导电层。 第一半导体管芯通过导电层与第二半导体管芯电连接。 第一和第二半导体管芯可以是倒装芯片型半导体管芯。 密封剂沉积在第一和第二半导体管芯上。 可以去除部分阶梯式内插器以减小厚度。

公开(公告)号：US09263301B2

公开(公告)日：2016-02-16

申请号：US13607204

申请日：2012-09-07

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L23/50 ,  H01L23/538

CPC分类号： H01L21/561 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16265 ,  H01L2224/48227 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor die has first and second discrete semiconductor components mounted over a plurality of wettable contact pads formed on a carrier. Conductive pillars are formed over the wettable contact pads. A semiconductor die is mounted to the conductive pillars over the first discrete components. The conductive pillars provide vertical stand-off of the semiconductor die as headroom for the first discrete components. The second discrete components are disposed outside a footprint of the semiconductor die. Conductive TSV can be formed through the semiconductor die. An encapsulant is deposited over the semiconductor die and first and second discrete components. The wettable contact pads reduce die and discrete component shifting during encapsulation. A portion of a back surface of the semiconductor die is removed to reduce package thickness. An interconnect structure is formed over the encapsulant and semiconductor die. Third discrete semiconductor components can be mounted over the semiconductor die.

摘要翻译： 半导体管芯具有安装在形成在载体上的多个可湿性接触焊盘上的第一和第二分立半导体部件。 导电柱形成在可湿性接触垫上。 半导体管芯通过第一分立元件安装到导电柱上。 导电柱提供半导体管芯的垂直间隔作为第一分立元件的余量。 第二分立元件设置在半导体管芯的占位面之外。 可以通过半导体管芯形成导电TSV。 密封剂沉积在半导体管芯和第一和第二分立元件上。 可湿式接触垫在封装期间减少管芯和分立元件的移动。 去除半导体管芯的后表面的一部分以减小封装厚度。 在密封剂和半导体管芯上形成互连结构。 第三分立半导体部件可以安装在半导体管芯上。

公开(公告)号：US20120261818A1

公开(公告)日：2012-10-18

申请号：US13536177

申请日：2012-06-28

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/498

CPC分类号： H01L23/5389 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3677 ,  H01L24/19 ,  H01L24/48 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the first semiconductor die. A penetrable adhesive layer is formed over a temporary carrier. The adhesive layer can include a plurality of slots. The semiconductor die is mounted to the carrier by embedding the bumps into the penetrable adhesive layer. The semiconductor die and interconnect structure can be separated by a gap. An encapsulant is deposited over the first semiconductor die. The bumps embedded into the penetrable adhesive layer reduce shifting of the first semiconductor die while depositing the encapsulant. The carrier is removed. An interconnect structure is formed over the semiconductor die. The interconnect structure is electrically connected to the bumps. A thermally conductive bump is formed over the semiconductor die, and a heat sink is mounted to the interconnect structure and thermally connected to the thermally conductive bump.

摘要翻译： 半导体器件具有形成在第一半导体管芯的表面上的多个凸点的半导体管芯。 在临时载体上形成可穿透的粘合剂层。 粘合剂层可以包括多个槽。 通过将凸块嵌入到可穿透的粘合剂层中，将半导体管芯安装到载体上。 半导体管芯和互连结构可以通过间隙分开。 密封剂沉积在第一半导体管芯上。 嵌入可渗透粘合剂层中的凸起减少了第一半导体管芯的移动，同时沉积密封剂。 载体被移除。 在半导体管芯上形成互连结构。 互连结构电连接到凸块。 导热凸块形成在半导体管芯上，并且散热器安装到互连结构并热连接到导热凸块。

公开(公告)号：US08236617B2

公开(公告)日：2012-08-07

申请号：US12794612

申请日：2010-06-04

申请人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

发明人： Reza A. Pagaila ,  Yaojian Lin ,  Jun Mo Koo

IPC分类号： H01L23/488 ,  H01L23/552 ,  H01L23/36 ,  H01L21/60

CPC分类号： H01L23/5389 ,  H01L21/561 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L23/552 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/21 ,  H01L2224/2105 ,  H01L2224/215 ,  H01L2224/22 ,  H01L2224/221 ,  H01L2224/24195 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/3511 ,  H05K1/0203 ,  H05K1/186 ,  H05K2201/09772 ,  H01L2924/01014 ,  H01L2924/05432 ,  H01L2924/0542 ,  H01L2924/0503 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device has a thermally conductive layer with a plurality of openings formed over a temporary carrier. The thermally conductive layer includes electrically non-conductive material. A semiconductor die has a plurality of bumps formed over contact pads on the die. The semiconductor die is mounted over the thermally conductive layer so that the bumps are disposed at least partially within the openings in the thermally conductive layer. An encapsulant is deposited over the die and thermally conductive layer. The temporary carrier is removed to expose the bumps. A first interconnect structure is formed over the encapsulant, semiconductor die, and bumps. The bumps are electrically connected to the first interconnect structure. A heat sink or shielding layer can be formed over the semiconductor die. A second interconnect structure can be formed over the encapsulant and electrically connected to the first interconnect structure through conductive vias formed in the encapsulant.

摘要翻译： 半导体器件具有形成在临时载体上的多个开口的导热层。 导热层包括非导电材料。 半导体管芯具有形成在管芯上的接触焊盘上的多个凸块。 半导体管芯安装在导热层上，使得凸块至少部分地设置在导热层的开口内。 密封剂沉积在管芯和导热层上。 移除临时载体以暴露凸块。 在密封剂，半导体管芯和凸块之上形成第一互连结构。 凸块电连接到第一互连结构。 可以在半导体管芯上形成散热器或屏蔽层。 第二互连结构可以形成在密封剂之上并且通过形成在密封剂中的导电通孔电连接到第一互连结构。