公开(公告)号：US20110221041A1

公开(公告)日：2011-09-15

申请号：US12720057

申请日：2010-03-09

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng ,  Xusheng Bao

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng ,  Xusheng Bao

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/28 ,  H01L23/29 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14135 ,  H01L2224/221 ,  H01L2224/73265 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00

摘要： A plurality of semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. A portion of the encapsulant is designated as a saw street between the die, and a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant. The carrier is removed. A first insulating layer is formed over the die, saw street, and substrate edge. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer and first insulating layer. The encapsulant is singulated through the first insulating layer and saw street to separate the semiconductor die. A channel or net pattern can be formed in the first insulating layer on opposing sides of the saw street, or the first insulating layer covers the entire saw street and molding area around the semiconductor die.

摘要翻译： 多个半导体管芯安装到临时载体上。 密封剂沉积在半导体管芯和载体上。 密封剂的一部分被指定为模具之间的锯道，并且密封剂的一部分被指定为围绕密封剂的周边的基底边缘。 载体被移除。 在模具，锯条和基板边缘上形成第一绝缘层。 在第一绝缘层上形成第一导电层。 在第一导电层和第一绝缘层上形成第二绝缘层。 通过第一绝缘层和锯条将密封剂分离，以分离半导体管芯。 可以在锯条的相对侧的第一绝缘层中形成通道或网状图案，或者第一绝缘层覆盖整个锯条和半导体管芯周围的成型区域。

公开(公告)号：US08409926B2

公开(公告)日：2013-04-02

申请号：US12720057

申请日：2010-03-09

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng ,  Xusheng Bao

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang ,  Xia Feng ,  Xusheng Bao

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/28 ,  H01L23/29 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14135 ,  H01L2224/221 ,  H01L2224/73265 ,  H01L2224/96 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/19 ,  H01L2924/00014 ,  H01L2924/00

摘要： A plurality of semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. A portion of the encapsulant is designated as a saw street between the die, and a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant. The carrier is removed. A first insulating layer is formed over the die, saw street, and substrate edge. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first conductive layer and first insulating layer. The encapsulant is singulated through the first insulating layer and saw street to separate the semiconductor die. A channel or net pattern can be formed in the first insulating layer on opposing sides of the saw street, or the first insulating layer covers the entire saw street and molding area around the semiconductor die.

摘要翻译： 多个半导体管芯安装到临时载体上。 密封剂沉积在半导体管芯和载体上。 密封剂的一部分被指定为模具之间的锯道，并且密封剂的一部分被指定为围绕密封剂的周边的基底边缘。 载体被移除。 在模具，锯条和基板边缘上形成第一绝缘层。 在第一绝缘层上形成第一导电层。 在第一导电层和第一绝缘层上形成第二绝缘层。 通过第一绝缘层和锯条将密封剂分离，以分离半导体管芯。 可以在锯条的相对侧的第一绝缘层中形成通道或网状图案，或者第一绝缘层覆盖整个锯条和半导体管芯周围的成型区域。

公开(公告)号：US20100148360A1

公开(公告)日：2010-06-17

申请号：US12572590

申请日：2009-10-02

申请人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L23/498

CPC分类号： H01L23/5386 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/96 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05099

摘要： A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.

摘要翻译： 通过在载体上形成第一导电层制成半导体器件。 第一导电层具有与第一导电层的第二区域电隔离的第一区域。 在第一导电层的第一区域上形成导电柱。 半导体管芯或部件安装到第一导电层的第二区域。 第一密封剂沉积在半导体管芯上并且围绕导电柱。 在第一密封剂上形成第一互连结构。 第一互连结构电连接到导电柱。 载体被移除。 去除第一导电层的一部分。 第一导电层的剩余部分包括互连线和UBM垫。 在第一导电层的剩余部分上形成第二互连结构被去除。

公开(公告)号：US08796846B2

公开(公告)日：2014-08-05

申请号：US12572590

申请日：2009-10-02

申请人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L27/00

CPC分类号： H01L23/5386 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/96 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05099

摘要： A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.

摘要翻译： 通过在载体上形成第一导电层制成半导体器件。 第一导电层具有与第一导电层的第二区域电隔离的第一区域。 在第一导电层的第一区域上形成导电柱。 半导体管芯或部件安装到第一导电层的第二区域。 第一密封剂沉积在半导体管芯上并且围绕导电柱。 在第一密封剂上形成第一互连结构。 第一互连结构电连接到导电柱。 载体被移除。 去除第一导电层的一部分。 第一导电层的剩余部分包括互连线和UBM垫。 在第一导电层的剩余部分上形成第二互连结构被去除。

公开(公告)号：US07642128B1

公开(公告)日：2010-01-05

申请号：US12333977

申请日：2008-12-12

申请人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Xusheng Bao ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L21/44

CPC分类号： H01L23/5386 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/96 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2224/29099 ,  H01L2924/00 ,  H01L2224/05099

摘要： A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.

摘要翻译： 通过在载体上形成第一导电层制成半导体器件。 第一导电层具有与第一导电层的第二区域电隔离的第一区域。 在第一导电层的第一区域上形成导电柱。 半导体管芯或部件安装到第一导电层的第二区域。 第一密封剂沉积在半导体管芯上并且围绕导电柱。 在第一密封剂上形成第一互连结构。 第一互连结构电连接到导电柱。 载体被移除。 去除第一导电层的一部分。 第一导电层的剩余部分包括互连线和UBM垫。 在第一导电层的剩余部分上形成第二互连结构被去除。

公开(公告)号：US09865482B2

公开(公告)日：2018-01-09

申请号：US13438696

申请日：2012-04-03

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L23/522 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L2221/68372 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/1134 ,  H01L2224/16235 ,  H01L2224/20 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by providing a temporary carrier for supporting the semiconductor device. An integrated passive device (IPD) is mounted to the temporary carrier using an adhesive. The IPD includes a capacitor and a resistor and has a plurality of through-silicon vias (TSVs). A discrete component is mounted to the temporary carrier using the adhesive. The discrete component includes a capacitor. The IPD and the discrete component are encapsulated using a molding compound. A first metal layer is formed over the molding compound. The first metal layer is connected to the TSVs of the IPD and forms an inductor. The temporary carrier and the adhesive are removed, and a second metal layer is formed over the IPD and the discrete component. The second metal layer interconnects the IPD and the discrete component and forms an inductor. An optional interconnect structure is formed over the second metal layer.

公开(公告)号：US09679863B2

公开(公告)日：2017-06-13

申请号：US13243214

申请日：2011-09-23

申请人： Yaojian Lin ,  Jianmin Fang ,  Xia Feng ,  Kang Chen

发明人： Yaojian Lin ,  Jianmin Fang ,  Xia Feng ,  Kang Chen

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L21/56 ,  H01L25/10 ,  H01L25/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/31 ,  H01L21/683

CPC分类号： H01L23/562 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68304 ,  H01L2221/68331 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/24155 ,  H01L2224/245 ,  H01L2224/81815 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/82986 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2224/81 ,  H01L2224/82 ,  H01L2224/19 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2224/1146

摘要： A semiconductor device has a first encapsulant deposited over a first carrier. A plurality of conductive vias is formed through the first encapsulant to provide an interconnect substrate. A first semiconductor die is mounted over a second carrier. The interconnect substrate is mounted over the second carrier adjacent to the first semiconductor die. A second semiconductor die is mounted over the second carrier adjacent to the interconnect substrate. A second encapsulant is deposited over the first and second semiconductor die, interconnect substrate, and second carrier. A first interconnect structure is formed over a first surface of the second encapsulant and electrically connected to the conductive vias. A second interconnect structure is formed over a second surface of the second encapsulant and electrically connected to the conductive vias to make the Fo-WLCSP stackable. Additional semiconductor die can be mounted over the first and second semiconductor die in a PoP arrangement.

公开(公告)号：US09269598B2

公开(公告)日：2016-02-23

申请号：US13569105

申请日：2012-08-07

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L27/08 ,  H01L21/56 ,  H01L21/683 ,  H01L25/16 ,  H01L25/00 ,  H01L25/03 ,  H01L23/538 ,  H01L23/00

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/81 ,  H01L25/03 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has a first conductive layer formed over a sacrificial substrate. A first integrated passive device (IPD) is formed in a first region over the first conductive layer. A conductive pillar is formed over the first conductive layer. A high-resistivity encapsulant greater than 1.0 kohm-cm is formed over the first IPD to a top surface of the conductive pillar. A second IPD is formed over the encapsulant. The first encapsulant has a thickness of at least 50 micrometers to vertically separate the first and second IPDs. An insulating layer is formed over the second IPD. The sacrificial substrate is removed and a second semiconductor die is disposed on the first conductive layer. A first semiconductor die is formed in a second region over the substrate. A second encapsulant is formed over the second semiconductor die and a thermally conductive layer is formed over the second encapsulant.

摘要翻译： 半导体器件具有形成在牺牲衬底上的第一导电层。 第一集成无源器件（IPD）形成在第一导电层上的第一区域中。 在第一导电层上形成导电柱。 在第一IPD上形成大于1.0kohm-cm的高电阻率密封剂到导电柱的顶表面。 在密封剂上形成第二个IPD。 第一密封剂具有至少50微米的厚度以垂直分离第一和第二IPD。 绝缘层形成在第二IPD上。 去除牺牲基板，在第一导电层上设置第二半导体管芯。 第一半导体管芯形成在衬底上的第二区域中。 在第二半导体管芯上形成第二密封剂，并且在第二密封剂上形成导热层。

公开(公告)号：US08445990B2

公开(公告)日：2013-05-21

申请号：US12964810

申请日：2010-12-10

申请人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

发明人： Yaojian Lin ,  Kang Chen ,  Jianmin Fang

IPC分类号： H01L27/08

CPC分类号： H01L23/49822 ,  H01L21/568 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/19 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05552 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/20 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19104 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/00

摘要： A semiconductor device has an adhesive layer formed over a carrier. A semiconductor die has bumps formed over an active surface of the semiconductor die. The semiconductor die is mounted to the carrier with the bumps partially disposed in the adhesive layer to form a gap between the semiconductor die and adhesive layer. An encapsulant is deposited over the semiconductor die and within the gap between the semiconductor die and adhesive layer. The carrier and adhesive layer are removed to expose the bumps from the encapsulant. An insulating layer is formed over the encapsulant. A conductive layer is formed over the insulating layer in a wound configuration to exhibit inductive properties and electrically connected to the bumps. The conductive layer is partially disposed within a footprint of the semiconductor die. The conductive layer has a separation from the semiconductor die as determined by the gap and insulating layer.

摘要翻译： 半导体器件具有形成在载体上的粘合层。 半导体管芯具有在半导体管芯的有效表面上形成的凸块。 半导体管芯安装到载体上，凸起部分地设置在粘合剂层中，以在半导体管芯和粘合剂层之间形成间隙。 密封剂沉积在半导体管芯上并且在半导体管芯和粘合剂层之间的间隙内。 去除载体和粘合剂层以从密封剂露出凸块。 绝缘层形成在密封剂上。 导电层以缠绕构型形成在绝缘层上，以呈现电感性能并与凸点电连接。 导电层部分地设置在半导体管芯的覆盖区内。 由间隙和绝缘层确定的导电层具有与半导体管芯的分离。

公开(公告)号：US20120292738A1

公开(公告)日：2012-11-22

申请号：US13569105

申请日：2012-08-07

申请人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

发明人： Yaojian Lin ,  Jianmin Fang ,  Kang Chen ,  Haijing Cao

IPC分类号： H01L27/06

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/81 ,  H01L25/03 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81001 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81805 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has a first conductive layer formed over a sacrificial substrate. A first integrated passive device (IPD) is formed in a first region over the first conductive layer. A conductive pillar is formed over the first conductive layer. A high-resistivity encapsulant greater than 1.0 kohm-cm is formed over the first IPD to a top surface of the conductive pillar. A second IPD is formed over the encapsulant. The first encapsulant has a thickness of at least 50 micrometers to vertically separate the first and second IPDs. An insulating layer is formed over the second IPD. The sacrificial substrate is removed and a second semiconductor die is disposed on the first conductive layer. A first semiconductor die is formed in a second region over the substrate. A second encapsulant is formed over the second semiconductor die and a thermally conductive layer is formed over the second encapsulant.

摘要翻译： 半导体器件具有形成在牺牲衬底上的第一导电层。 第一集成无源器件（IPD）形成在第一导电层上的第一区域中。 在第一导电层上形成导电柱。 在第一IPD上形成大于1.0kohm-cm的高电阻率密封剂到导电柱的顶表面。 在密封剂上形成第二个IPD。 第一密封剂具有至少50微米的厚度以垂直分离第一和第二IPD。 绝缘层形成在第二IPD上。 去除牺牲基板，在第一导电层上设置第二半导体管芯。 第一半导体管芯形成在衬底上的第二区域中。 在第二半导体管芯上形成第二密封剂，并且在第二密封剂上形成导热层。