公开(公告)号：US09343429B2

公开(公告)日：2016-05-17

申请号：US12683008

申请日：2010-01-06

申请人： Reza A. Pagaila ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Byung Tai Do

IPC分类号： H01L23/544 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L25/03 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/481 ,  H01L24/18 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06551 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.

摘要翻译： 通过在晶片上形成半导体管芯之间的间隙来制造半导体器件。 绝缘材料沉积在间隙中。 从半导体晶片的第一侧去除绝缘材料的第一部分以形成第一凹口。 第一缺口小于半导体管芯的厚度。 导电材料沉积到第一凹口中以在间隙内形成导电通孔的第一部分。 从半导体晶片的第二侧去除绝缘材料的第二部分以形成第二凹口。 第二凹口延伸穿过绝缘材料到第一凹口。 导电材料沉积到第二凹口中以在间隙内形成导电通孔的第二部分。 半导体晶片通过间隙被分离，以分离半导体管芯。

公开(公告)号：US09324672B2

公开(公告)日：2016-04-26

申请号：US12545390

申请日：2009-08-21

申请人： Reza A. Pagaila

发明人： Reza A. Pagaila

IPC分类号： H01L21/00 ,  H01L23/00

CPC分类号： H01L24/20 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24137 ,  H01L2224/2518 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2224/73259 ,  H01L2224/73277 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor device, a plurality of conductive pillars is formed over a temporary carrier. A dual-active sided semiconductor die is mounted over the carrier between the conductive pillars. The semiconductor die has first and second opposing active surfaces with first contact pads on the first active surface and second contact pads on the second active surface. An encapsulant is deposited over the semiconductor die and temporary carrier. A first interconnect structure is formed over a first surface of the encapsulant. The first interconnect structure is electrically connected to the conductive pillars and first contact pads of the dual-active sided semiconductor die. The temporary carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant opposite the first surface of the encapsulant. The second interconnect structure is electrically connected to the conductive pillars and second contact pads of the dual-active sided semiconductor die.

摘要翻译： 在半导体器件中，在临时载体上形成多个导电柱。 双主动双面半导体管芯安装在载体之间的导电柱之间。 半导体管芯具有第一和第二相对的有源表面，其中第一有源表面上具有第一接触焊盘，在第二有效表面上具有第二接触焊盘。 密封剂沉积在半导体管芯和临时载体上。 在密封剂的第一表面上形成第一互连结构。 第一互连结构电连接到双主动侧半导体管芯的导电柱和第一接触焊盘。 移除临时载体。 第二互连结构形成在密封剂的与密封剂的第一表面相对的第二表面上。 第二互连结构电连接到双主动侧半导体管芯的导电柱和第二接触焊盘。

公开(公告)号：US09263361B2

公开(公告)日：2016-02-16

申请号：US13446863

申请日：2012-04-13

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Rajendra D. Pendse

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Rajendra D. Pendse

IPC分类号： H01L23/31 ,  H01L21/683 ,  H01L23/00 ,  H01L25/10 ,  H01L23/538

CPC分类号： H01L23/3128 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/86 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a conductive layer over a temporary carrier. The conductive layer includes a wettable pad. A stud bump is formed over the wettable pad. The stud bump can be a stud bump or stacked bumps. A semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the stud bump. A first interconnect structure is formed over a first surface of the encapsulant. The first interconnect structure includes a first IPD and is electrically connected to the stud bump. The carrier is removed. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The second interconnect structure includes a second IPD. The first or second IPD includes a capacitor, resistor, or inductor. The semiconductor devices are stackable and electrically connected through the stud bump.

摘要翻译： 通过在临时载体上形成导电层制成半导体器件。 导电层包括可湿性垫。 在可湿性垫上形成柱状凸块。 螺栓凸块可以是螺柱凸块或堆叠的凸块。 半导体管芯安装在载体上。 密封剂沉积在半导体管芯上并且在螺柱凸块周围。 在密封剂的第一表面上形成第一互连结构。 第一互连结构包括第一IPD并且电连接到螺柱凸块。 载体被移除。 在与第一互连结构相对的密封剂的第二表面上形成第二互连结构。 第二互连结构包括第二IPD。 第一或第二IPD包括电容器，电阻器或电感器。 半导体器件可叠置并通过柱形凸起电连接。

公开(公告)号：US08946870B2

公开(公告)日：2015-02-03

申请号：US13349510

申请日：2012-01-12

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L25/03 ,  H01L25/065

CPC分类号： H01L23/5386 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/768 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/82 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/83 ,  H01L2924/00012

摘要： A semiconductor die has a first semiconductor die mounted to a carrier. A plurality of conductive pillars is formed over the carrier around the first die. An encapsulant is deposited over the first die and conductive pillars. A first stepped interconnect layer is formed over a first surface of the encapsulant and first die. The first stepped interconnect layer has a first opening. A second stepped interconnect layer is formed over the first stepped interconnect layer. The second stepped interconnect layer has a second opening. The carrier is removed. A build-up interconnect structure is formed over a second surface of the encapsulant and first die. A second semiconductor die over the first semiconductor die and partially within the first opening. A third semiconductor die is mounted over the second die and partially within the second opening. A fourth semiconductor die is mounted over the second stepped interconnect layer.

摘要翻译： 半导体管芯具有安装到载体上的第一半导体管芯。 在第一管芯周围的载体上形成多个导电柱。 密封剂沉积在第一管芯和导电柱上。 在密封剂和第一模具的第一表面上形成第一阶梯式互连层。 第一阶梯式互连层具有第一开口。 第二阶梯式互连层形成在第一阶梯式互连层上。 第二阶梯式互连层具有第二开口。 载体被移除。 在密封剂和第一模具的第二表面上形成积聚互连结构。 第一半导体管芯上的第二半导体管芯，并且部分地在第一开口内。 第三半导体管芯安装在第二管芯上并部分地在第二开口内。 第四半导体管芯安装在第二阶梯式互连层上。

公开(公告)号：US08940636B2

公开(公告)日：2015-01-27

申请号：US13273537

申请日：2011-10-14

申请人： Reza A. Pagaila ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Byung Tai Do

发明人： Reza A. Pagaila ,  Zigmund R. Camacho ,  Lionel Chien Hui Tay ,  Byung Tai Do

IPC分类号： H01L21/44 ,  H01L21/683 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00

CPC分类号： H01L21/6835 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/12 ,  H01L24/13 ,  H01L24/19 ,  H01L24/25 ,  H01L24/28 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/19 ,  H01L2224/24011 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/82039 ,  H01L2224/9202 ,  H01L2224/92244 ,  H01L2225/06551 ,  H01L2225/06558 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/83005

摘要： A semiconductor package includes a semiconductor wafer having a plurality of semiconductor die. A contact pad is formed over and electrically connected to an active surface of the semiconductor die. A gap is formed between the semiconductor die. An insulating material is deposited in the gap between the semiconductor die. An adhesive layer is formed over a surface of the semiconductor die and the insulating material. A via is formed in the insulating material and the adhesive layer. A conductive material is deposited in the via to form a through hole via (THV). A conductive layer is formed over the contact pad and the THV to electrically connect the contact pad and the THV. The plurality of semiconductor die is singulated. The insulating material can include an organic material. The active surface of the semiconductor die can include an optical device.

摘要翻译： 半导体封装包括具有多个半导体管芯的半导体晶片。 接触垫形成在半导体管芯的有源表面上并电连接到半导体管芯的有源表面。 在半导体管芯之间形成间隙。 绝缘材料沉积在半导体管芯之间的间隙中。 在半导体管芯和绝缘材料的表面上形成粘合剂层。 在绝缘材料和粘合剂层中形成通孔。 导电材料沉积在通孔中以形成通孔（THV）。 在接触焊盘和THV上形成导电层，以电连接接触焊盘和THV。 多个半导体管芯被切割。 绝缘材料可以包括有机材料。 半导体管芯的有源表面可以包括光学器件。

公开(公告)号：US08710635B2

公开(公告)日：2014-04-29

申请号：US13560008

申请日：2012-07-27

申请人： Reza A. Pagaila ,  Jose A. Caparas ,  Pandi C. Marimuthu

发明人： Reza A. Pagaila ,  Jose A. Caparas ,  Pandi C. Marimuthu

IPC分类号： H01L23/552 ,  H01L21/00

CPC分类号： H01L23/60 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/03

摘要： A semiconductor wafer has a plurality of semiconductor die separated by a saw street. The wafer is mounted to dicing tape. The wafer is singulated through the saw street to expose side surfaces of the semiconductor die. An ESD protection layer is formed over the semiconductor die and around the exposed side surfaces of the semiconductor die. The ESD protection layer can be a metal layer, encapsulant film, conductive polymer, conductive ink, or insulating layer covered by a metal layer. The ESD protection layer is singulated between the semiconductor die. The semiconductor die covered by the ESD protection layer are mounted to a temporary carrier. An encapsulant is deposited over the ESD protection layer covering the semiconductor die. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The ESD protection layer is electrically connected to the interconnect structure to provide an ESD path.

摘要翻译： 半导体晶片具有由锯条隔开的多个半导体管芯。 晶片安装在切割胶带上。 通过锯条将晶片分割，以露出半导体管芯的侧表面。 在半导体管芯上并围绕半导体管芯的暴露的侧表面形成ESD保护层。 ESD保护层可以是由金属层覆盖的金属层，密封剂膜，导电聚合物，导电油墨或绝缘层。 ESD保护层在半导体管芯之间分离。 由ESD保护层覆盖的半导体管芯被安装到临时载体上。 密封剂沉积在覆盖半导体管芯的ESD保护层上。 载体被移除。 在半导体管芯和密封剂上形成互连结构。 ESD保护层电连接到互连结构以提供ESD路径。

公开(公告)号：US08378383B2

公开(公告)日：2013-02-19

申请号：US12411310

申请日：2009-03-25

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Nathapong Suthiwongsunthorn

IPC分类号： H01L30/134

CPC分类号： H01L23/552 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/48 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/6677 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/85 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device has a first semiconductor die with a shielding layer formed over its back surface. The first semiconductor die is mounted to a carrier. A first insulating layer is formed over the shielding layer. A second semiconductor die is mounted over the first semiconductor die separated by the shielding layer and first insulating layer. A second insulating layer is deposited over the first and second semiconductor die. A first interconnect structure is formed over the second semiconductor die and second insulating layer. A second interconnect structure is formed over the first semiconductor die and second insulating layer. The shielding layer is electrically connected to a low-impedance ground point through a bond wire, RDL, or TSV. The second semiconductor die may also have a shielding layer formed on its back surface. The semiconductor die are bonded through the metal-to-metal shielding layers.

摘要翻译： 半导体器件具有形成在其背面上的屏蔽层的第一半导体管芯。 第一半导体管芯安装到载体上。 在屏蔽层上形成第一绝缘层。 第二半导体管芯安装在由屏蔽层和第一绝缘层隔开的第一半导体管芯上。 在第一和第二半导体管芯上沉积第二绝缘层。 在第二半导体管芯和第二绝缘层上形成第一互连结构。 在第一半导体管芯和第二绝缘层上形成第二互连结构。 屏蔽层通过接合线RDL或TSV与低阻抗接地点电连接。 第二半导体管芯也可以在其背面形成有屏蔽层。 半导体管芯通过金属对金属屏蔽层接合。

公开(公告)号：US08368187B2

公开(公告)日：2013-02-05

申请号：US12699431

申请日：2010-02-03

申请人： Reza A. Pagaila

发明人： Reza A. Pagaila

IPC分类号： H01L23/552 ,  H01L21/50 ,  H01L23/52

CPC分类号： H01L23/552 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L23/34 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06558 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device is made by mounting an insulating layer over a temporary substrate. A via is formed through the insulating layer. The via is filled with conductive material. A semiconductor die has a stress sensitive region. A dam is formed around the stress sensitive region. The semiconductor die is mounted to the conductive via. The dam creates a gap adjacent to the stress sensitive region. An encapsulant is deposited over the semiconductor die. The dam blocks the encapsulant from entering the gap. The temporary substrate is removed. A first interconnect structure is formed over the semiconductor die. The gap isolates the stress sensitive region from the first interconnect structure. A shielding layer or heat sink can be formed over the semiconductor die. A second interconnect structure can be formed over the semiconductor die opposite the first interconnect structure.

公开(公告)号：US08349657B2

公开(公告)日：2013-01-08

申请号：US13423263

申请日：2012-03-18

申请人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ei Chua

发明人： Byung Tai Do ,  Reza A. Pagaila ,  Linda Pei Ei Chua

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/48 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/02333 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2224/13099 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor wafer contains a plurality of semiconductor die each having a peripheral area around the die. A first insulating layer is formed over the die. A recessed region with angled sidewall is formed in the peripheral area. A first conductive layer is formed over the first insulating layer outside the recessed region and further into the recessed region. A conductive pillar is formed over the first conductive layer within the recessed region. A second insulating layer is formed over the first insulating layer, conductive pillar, and first conductive layer such that the conductive pillar is exposed from the second insulating layer. A dicing channel partially through the peripheral area. The semiconductor wafer undergoes backgrinding to the dicing channel to singulate the semiconductor wafer and separate the semiconductor die. The semiconductor die can be disposed in a semiconductor package with other components and electrically interconnected through the conductive pillar.

摘要翻译： 半导体晶片包含多个半导体管芯，每个半导体管芯具有围绕管芯的周边区域。 在模具上形成第一绝缘层。 具有成角度侧壁的凹陷区域形成在周边区域中。 第一导电层形成在凹陷区域外部的第一绝缘层的上方，并且进一步进入凹陷区域。 导电柱形成在凹陷区域内的第一导电层的上方。 在第一绝缘层，导电柱和第一导电层上形成第二绝缘层，使得导电柱从第二绝缘层露出。 切割通道部分通过周边区域。 半导体晶片经历对切割通道的后研磨，以切割半导体晶片并分离半导体管芯。 半导体管芯可以被设置在具有其它部件的半导体封装中并通过导电柱电互连。

公开(公告)号：US20120241940A1

公开(公告)日：2012-09-27

申请号：US13492668

申请日：2012-06-08

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Linda Pei Ee Chua

IPC分类号： H01L23/36 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00

摘要： A semiconductor device has a first thermally conductive layer formed over a first surface of a semiconductor die. A second surface of the semiconductor die is mounted to a sacrificial carrier. An encapsulant is deposited over the first thermally conductive layer and sacrificial carrier. The encapsulant is planarized to expose the first thermally conductive layer. A first insulating layer is formed over the second surface of the semiconductor die and a first surface of the encapsulant. A portion of the first insulating layer over the second surface of the semiconductor die is removed. A second thermally conductive layer is formed over the second surface of the semiconductor die within the removed portion of the first insulating layer. An electrically conductive layer is formed within the insulating layer around the second thermally conductive layer. A heat sink can be mounted over the first thermally conductive layer.

摘要翻译： 半导体器件具有形成在半导体管芯的第一表面上的第一导热层。 半导体管芯的第二表面安装到牺牲载体上。 密封剂沉积在第一导热层和牺牲载体上。 将密封剂平坦化以暴露第一导热层。 第一绝缘层形成在半导体管芯的第二表面和密封剂的第一表面上。 半导体管芯的第二表面上的第一绝缘层的一部分被去除。 在第一绝缘层的去除部分内的半导体管芯的第二表面上形成第二导热层。 在第二导热层周围的绝缘层内形成导电层。 散热器可以安装在第一导热层上。