公开(公告)号：US20230317419A1

公开(公告)日：2023-10-05

申请号：US17712044

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Young Je UM ,  Wan Jae PARK ,  Joun Taek KOO ,  Dong Hun KIM ,  Seong Gil LEE ,  Ji Hwan LEE ,  Dong Sub OH ,  Myeong Sub NOH ,  Du Ri KIM

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32724 ,  H01J2237/3344

Abstract: Provided are a substrate processing apparatus and method capable of improving line edge roughness (LER). The substrate processing apparatus comprises a plasma generating space disposed between an electrode and an ion blocker, a processing space disposed under the ion blocker and for processing a substrate, a first gas supply module for providing a first gas for generating plasma to the plasma generating space, and a second gas supply module for providing an unexcited second gas to the processing space, wherein the first gas is a hydrogen-containing gas, the second gas includes a nitrogen-containing gas, and the substrate includes a photoresist pattern including carbon.

公开(公告)号：US11776819B2

公开(公告)日：2023-10-03

申请号：US16969488

申请日：2019-02-13

Applicant: KOREA INSTITUTE OF FUSION ENERGY

Inventor： Dong Chan Seok ,  Tai Hyeop Lho ,  Yong Ho Jung ,  Yong Sup Choi ,  Kang Il Lee ,  Seung Ryul Yoo ,  Soo Ouk Jang

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568

Abstract: A point etching module using an annular surface-discharge plasma apparatus is disclosed. The point etching module using an annular surface-discharge plasma apparatus comprises: a plate-shaped dielectric; a circular electrode disposed on and in contact with the upper surface of the dielectric; an annular electrode disposed on and in contact with the lower surface of the dielectric and providing a gas receiving space for receiving gas; and a power supplier for applying high voltage between the circular electrode and the annular electrode, wherein when the application of the high voltage starts an electric discharge, filament type plasma is irradiated toward a substrate to be treated, by using plasma flowing in the center direction of the annular electrode from between the inner surface of the annular electrode and the lower surface of the dielectric.

公开(公告)号：US11776791B2

公开(公告)日：2023-10-03

申请号：US16886543

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Jong Chan Lee ,  Geon Jong Kim ,  Kwang Sung Yoo ,  Seok June Yun

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46

CPC classification number: H01J37/32385 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/687 ,  H05H1/46

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

公开(公告)号：US11773489B2

公开(公告)日：2023-10-03

申请号：US14610531

申请日：2015-01-30

Applicant: Applied Materials, Inc.

Inventor： Lai Zhao ,  Qunhua Wang ,  Robin L. Tiner ,  Soo Young Choi ,  Beom Soo Park

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/458

CPC classification number: C23C16/45591 ,  C23C16/4585 ,  H01J37/32449 ,  H01J37/32715

Abstract: The present disclosure relates to a gas confiner assembly designed to reduce the non-uniform deposition rates by confining the gas flow and changing the local gas flow distribution near the edge regions of the substrate. The material, size, shape and other features of the gas confiner assembly can be varied based on the processing requirements and associated deposition rates. In one embodiment, a gas confiner assembly for a processing chamber comprises a gas confiner configured to decrease gas flow and compensate for high deposition rates on edge regions of substrates. The gas confiner assembly also comprises a cover disposed below the gas confiner. The cover is configured to prevent a substrate support from being exposed to plasma.

公开(公告)号：US20230290613A1

公开(公告)日：2023-09-14

申请号：US18179187

申请日：2023-03-06

Applicant: ASM IP HOLDING B.V.

Inventor： Varun Sharma ,  Tom Blomberg

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J37/32357 ,  H01J2237/182 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A semiconductor processing system for providing a remotely generated excited species of a processing gas to a reactor. The semiconductor processing system comprises a remotely positioned plasma generator in fluid communication with a plasm source vessel and a gas line to convey an excited species generated in the plasma generator to the reactor. The gas line may be a double-walled pipe comprising an outer pipe and a perforated an inner pipe or a gas line to which DC bias voltage is applied.

公开(公告)号：US11749532B2

公开(公告)日：2023-09-05

申请号：US17307383

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Hao Jiang ,  Chi Lu ,  He Ren ,  Mehul Naik

IPC: H01L21/3213 ,  H01L21/033 ,  H01J37/32 ,  H01L21/67 ,  H01L23/532

CPC classification number: H01L21/32136 ,  H01J37/32449 ,  H01L21/0332 ,  H01L21/32139 ,  H01L21/67069 ,  H01J37/32183 ,  H01J2237/3341 ,  H01L23/53242

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of O2 or chloride (Cl2) while supplying nitrogen (N2) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.

公开(公告)号：US11749511B2

公开(公告)日：2023-09-05

申请号：US17149150

申请日：2021-01-14

Applicant: Tokyo Electron Limited

Inventor： Ryoji Yamazaki ,  Hiroyuki Miyashita ,  Mikio Sato

IPC: H01J37/32 ,  G01J3/02 ,  G01J3/28

CPC classification number: H01J37/32972 ,  G01J3/021 ,  G01J3/0218 ,  G01J3/28 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32963 ,  H01J2237/334 ,  H01J2237/335

Abstract: A plasma observation system includes a plasma processing apparatus which includes a processing container in which a substrate is processed with plasma, and a plurality of observation windows each capable of observing an emission state of the plasma in the processing container; and a measuring device including a light receiver configured to receive a plurality of light beams intersecting in the processing container through a plurality of observation windows, and a controller configured to specify an observation point of the plasma and determine a state of the plasma at the observation point based on the plurality of light beams received by the light receiver.

公开(公告)号：US20230274949A1

公开(公告)日：2023-08-31

申请号：US18003257

申请日：2022-03-15

Applicant: Lam Research Corporation

Inventor： Aaron Lynn Routzahn ,  Andreas Fischer ,  Thorsten Bernd Lill

IPC: H01L21/465 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/465 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/67069

Abstract: Indium gallium zinc oxide can be etched by providing a wafer having a layer of indium gallium zinc oxide to a processing chamber, heating the wafer to a first temperature, flowing a first chemical species comprising a fluoride to create a layer of indium gallium zinc oxyfluoride, and removing the layer of indium gallium zinc oxyfluoride by flowing a second chemical species comprising an alkyl aluminum halide, an aluminum alkalide, an organoaluminium compound, a diketone, silicon halide, silane, halogenated silane, or alkyl silicon halide.

公开(公告)号：US20230260758A1

公开(公告)日：2023-08-17

申请号：US17670670

申请日：2022-02-14

Applicant: Taiwan Semiconductor Manufacturing Company

Inventor： Cheng Kuang Tso ,  Chou-Feng Lee ,  Chih-Hsien Hsu ,  Chung-Hsiu Cheng ,  Jr-Sheng Chen

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01L21/3065 ,  H01J37/32522 ,  H01J2237/334

Abstract: Methods and systems for uniformly cooling a dome within a plasma treatment system are disclosed. The methods and systems utilize a diffuser including a perforated plate and a cone. The perforated plate includes a center portion and multiple arrays of holes with each array being located circumferentially at a different distance from the center. The cone extends away from the center. The diffuser spreads cooling gas more uniformly across the surface of the dome.

公开(公告)号：US11721528B2

公开(公告)日：2023-08-08

申请号：US17010035

申请日：2020-09-02

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Mikio Sato ,  Eiki Kamata

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32174 ,  H01J37/32559 ,  H01J37/32935

Abstract: There is provided a plasma processing apparatus including: a processing container; a first electrode provided inside the processing container and connected to a high-frequency power supply; a second electrode provided inside the processing container to face the first electrode, the second electrode being grounded; and a film thickness calculator connected to at least one of the first electrode and the second electrode and configured to calculate a thickness of a film deposited on the at least one of the first electrode and the second electrode.