公开(公告)号：US08609526B2

公开(公告)日：2013-12-17

申请号：US12842617

申请日：2010-07-23

Applicant: Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

Inventor： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

IPC: H01L21/445 ,  H01L21/4757

CPC classification number: H01L24/05 ,  H01L21/0206 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/81022 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.

Abstract translation: 形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。 除氧步骤使用包括氟和氧的工艺气体进行。 然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。 含铜层镀在含铜种子层上。

公开(公告)号：US08569897B2

公开(公告)日：2013-10-29

申请号：US12786818

申请日：2010-05-25

Applicant: Chung-Shi Liu ,  Chien Ling Hwang ,  Ming-Che Ho

Inventor： Chung-Shi Liu ,  Chien Ling Hwang ,  Ming-Che Ho

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/01083 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.

Abstract translation: 在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。

公开(公告)号：US08227334B2

公开(公告)日：2012-07-24

申请号：US12843760

申请日：2010-07-26

Applicant: Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

Inventor： Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

IPC: H01L21/00

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11416 ,  H01L2224/11422 ,  H01L2224/11424 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/118 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13339 ,  H01L2224/13562 ,  H01L2224/13584 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/1379 ,  H01L2224/13794 ,  H01L2224/13809 ,  H01L2224/13813 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/13857 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/93 ,  H01L2225/06513 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2224/11 ,  H01L2924/00

Abstract: A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

Abstract translation: 形成器件的方法包括提供衬底，以及在衬底上形成焊料凸点。 将次要元件引入邻近焊料凸块顶表面的区域。 然后对焊料凸块执行再流程以将次要元件驱动到焊料凸块中。

公开(公告)号：US20120007228A1

公开(公告)日：2012-01-12

申请号：US12832231

申请日：2010-07-08

Applicant: Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Ming-Che HO ,  Chung-Shi LIU

Inventor： Wen-Hsiung LU ,  Ming-Da CHENG ,  Chih-Wei LIN ,  Ming-Che HO ,  Chung-Shi LIU

IPC: H01L23/498 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13647 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/13655 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

Abstract: An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.

Abstract translation: 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面，边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在覆盖层的顶表面之上。

公开(公告)号：US20110287628A1

公开(公告)日：2011-11-24

申请号：US12784314

申请日：2010-05-20

Applicant: Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

Inventor： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

IPC: H01L21/445

CPC classification number: H01L21/288 ,  C25D7/123 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/93 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

Abstract: A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.

Abstract translation: 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。

公开(公告)号：US20110278716A1

公开(公告)日：2011-11-17

申请号：US12778610

申请日：2010-05-12

Applicant: Chun-Lei HSU ,  Ming-Che HO ,  Ming-Da CHENG ,  Chung-Shi LIU

Inventor： Chun-Lei HSU ,  Ming-Che HO ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC: H01L23/485 ,  H01L21/60

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1148 ,  H01L2224/1161 ,  H01L2224/11616 ,  H01L2224/11831 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/206 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.

Abstract translation: 一种用于制造凸块结构的方法在封装层的开口中形成凸起下金属（UBM）层，然后在封装层的开口内的UBM层上形成凸点层。 在从封装层的上表面除去突起层的多余材料之后，去除封装层直到凸起层的顶部从封装层的上表面突出。

公开(公告)号：US20110101527A1

公开(公告)日：2011-05-05

申请号：US12846353

申请日：2010-07-29

Applicant: Ming-Da CHENG ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Ching-Wen CHEN ,  Yi-Wen WU ,  Chia-Tung CHANG ,  Ming-Che HO ,  Chung-Shi LIU

Inventor： Ming-Da CHENG ,  Wen-Hsiung LU ,  Chih-Wei LIN ,  Ching-Wen CHEN ,  Yi-Wen WU ,  Chia-Tung CHANG ,  Ming-Che HO ,  Chung-Shi LIU

IPC: H01L23/498 ,  H01L21/60

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/13006 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3651 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/05 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/05552

Abstract: The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.

Abstract translation: 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。 通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。

公开(公告)号：US20110092064A1

公开(公告)日：2011-04-21

申请号：US12842617

申请日：2010-07-23

Applicant: Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

Inventor： Chung-Shi Liu ,  Cheng-Chung Lin ,  Ming-Che Ho ,  Kuo Cheng Lin ,  Meng-Wei Chou

IPC: H01L21/3205

CPC classification number: H01L24/05 ,  H01L21/0206 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/81022 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: A method of forming an integrated circuit structure includes forming a copper-containing seed layer on a wafer, and performing a descum step on an exposed surface of the copper-containing seed layer. The descum step is performed using a process gas including fluorine and oxygen. A reduction/purge step is then performed on the exposed surface of the copper-containing seed layer using a nitrogen-containing gas. A copper-containing layer is plated on the copper-containing seed layer.

Abstract translation: 形成集成电路结构的方法包括在晶片上形成含铜晶种层，并在含铜种子层的暴露表面上进行除氧步骤。 除氧步骤使用包括氟和氧的工艺气体进行。 然后使用含氮气体在含铜种子层的暴露表面上进行还原/吹扫步骤。 含铜层镀在含铜种子层上。

公开(公告)号：US20110062580A1

公开(公告)日：2011-03-17

申请号：US12786818

申请日：2010-05-25

Applicant: Chung-Shi LIU ,  Chien Ling HWANG ,  Ming-Che HO

Inventor： Chung-Shi LIU ,  Chien Ling HWANG ,  Ming-Che HO

IPC: H01L23/498

CPC classification number: H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01043 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/01083 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.

Abstract translation: 在凸块式冶金（UBM）层上形成由CuGeyNz层，CuSixNz层，CuSixGeyNz层或其组合形成的保护层，用于防止UBM层在后续工艺中发生化学侵蚀和氧化。

公开(公告)号：US20100018029A1

公开(公告)日：2010-01-28

申请号：US12179347

申请日：2008-07-24

Applicant: Cheng Hsun Chan ,  Ming-Che Ho

Inventor： Cheng Hsun Chan ,  Ming-Che Ho

IPC: B23P17/00

CPC classification number: H01L21/67046 ,  H01L21/67051 ,  Y10T29/49002

Abstract: An apparatus for manufacturing integrated circuits on a wafer includes a polish pad; a rinse arm movable over the polish pad; and a post-polish cleaner. The post-polish cleaner includes a brush for brushing the wafer; and a nozzle aiming at the wafer. The apparatus further includes a mixer configured to mix an additive and di-ionized water; and a pipe connecting the mixer to at least one of the rinse arm and the nozzle.

Abstract translation: 用于在晶片上制造集成电路的装置包括抛光垫; 漂洗臂可移动在抛光垫上; 和一个后抛光清洁剂。 后抛光清洁器包括用于刷洗晶片的刷子; 以及瞄准晶片的喷嘴。 该装置还包括配置成混合添加剂和二次电离水的混合器; 以及将混合器连接到冲洗臂和喷嘴中的至少一个的管道。