公开(公告)号：US08405199B2

公开(公告)日：2013-03-26

申请号：US12832231

申请日：2010-07-08

申请人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11424 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13647 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/10335 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2224/13655 ,  H01L2224/81 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the disclosure includes a conductive pillar on a semiconductor die. A substrate is provided. A bond pad is over the substrate. A conductive pillar is over the bond pad. The conductive pillar has a top surface, edge sidewalls and a height. A cap layer is over the top surface of the conductive pillar. The cap layer extends along the edge sidewalls of the conductive pillar for a length. A solder material is over a top surface of the cap layer.

摘要翻译： 本公开的实施例包括半导体管芯上的导电柱。 提供基板。 焊盘在衬底上。 导电支柱位于接合垫上方。 导电柱具有顶表面，边缘侧壁和高度。 覆盖层在导电柱的顶表面之上。 盖层沿着导电柱的边缘侧壁延伸一段长度。 焊料材料在盖层的顶表面之上。

公开(公告)号：US08703546B2

公开(公告)日：2014-04-22

申请号：US12784314

申请日：2010-05-20

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/82 ,  H01L21/288

CPC分类号： H01L21/288 ,  C25D7/123 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/93 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

摘要： A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.

摘要翻译： 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。

公开(公告)号：US20110287628A1

公开(公告)日：2011-11-24

申请号：US12784314

申请日：2010-05-20

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L21/445

CPC分类号： H01L21/288 ,  C25D7/123 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11901 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/93 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/1146

摘要： A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.

摘要翻译： 一种形成装置的方法包括进行第一电镀工艺以形成第一金属特征，并且在活化处理溶液中对第一金属特征的表面进行活化处理，其中活化处理溶液包括处理剂， 电离（DI）水。 在执行激活处理的步骤之后，执行第二电镀处理以形成第二金属特征并接触第一金属特征的表面。

公开(公告)号：US08659155B2

公开(公告)日：2014-02-25

申请号：US12846353

申请日：2010-07-29

申请人： Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Ching-Wen Chen ,  Yi-Wen Wu ,  Chia-Tung Chang ,  Ming-Che Ho ,  Chung-Shi Liu

发明人： Ming-Da Cheng ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Ching-Wen Chen ,  Yi-Wen Wu ,  Chia-Tung Chang ,  Ming-Che Ho ,  Chung-Shi Liu

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/10145 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/13006 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16507 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3651 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/05 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/05552

摘要： The mechanism of forming a metal bump structure described above resolves the delamination issues between a conductive layer on a substrate and a metal bump connected to the conductive layer. The conductive layer can be a metal pad, a post passivation interconnect (PPI) layer, or a top metal layer. By performing an in-situ deposition of a protective conductive layer over the conductive layer (or base conductive layer), the under bump metallurgy (UBM) layer of the metal bump adheres better to the conductive layer and reduces the occurrence of interfacial delamination. In some embodiments, a copper diffusion barrier sub-layer in the UBM layer can be removed. In some other embodiments, the UBM layer is not needed if the metal bump is deposited by a non-plating process and the metal bump is not made of copper.

摘要翻译： 上述形成金属凸块结构的机构解决了基板上的导电层与连接到导电层的金属凸块之间的分层问题。 导电层可以是金属焊盘，后钝化互连（PPI）层或顶层金属层。 通过在导电层（或基底导电层）上进行保护性导电层的原位沉积，金属凸块的凸块下金属（UBM）层更好地粘附到导电层并减少界面分层的发生。 在一些实施例中，可以去除UBM层中的铜扩散阻挡子层。 在一些其它实施例中，如果通过非电镀工艺沉积金属凸块并且金属凸块不是由铜制成的，则不需要UBM层。

公开(公告)号：US20120286423A1

公开(公告)日：2012-11-15

申请号：US13556016

申请日：2012-07-23

申请人： Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

发明人： Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

IPC分类号： H01L23/498

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11416 ,  H01L2224/11422 ,  H01L2224/11424 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/118 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13339 ,  H01L2224/13562 ,  H01L2224/13584 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/1379 ,  H01L2224/13794 ,  H01L2224/13809 ,  H01L2224/13813 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/13857 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/93 ,  H01L2225/06513 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2224/11 ,  H01L2924/00

摘要： A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

公开(公告)号：US08993431B2

公开(公告)日：2015-03-31

申请号：US12778610

申请日：2010-05-12

申请人： Chun-Lei Hsu ,  Ming-Che Ho ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Chun-Lei Hsu ,  Ming-Che Ho ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/44 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/1148 ,  H01L2224/1161 ,  H01L2224/11616 ,  H01L2224/11831 ,  H01L2224/13005 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/206 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.

摘要翻译： 一种用于制造凸块结构的方法在封装层的开口中形成凸起下金属（UBM）层，然后在封装层的开口内的UBM层上形成凸点层。 在从封装层的上表面除去突起层的多余材料之后，去除封装层直到凸起层的顶部从封装层的上表面突出。

公开(公告)号：US08227334B2

公开(公告)日：2012-07-24

申请号：US12843760

申请日：2010-07-26

申请人： Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

发明人： Ming-Da Cheng ,  Ming-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

IPC分类号： H01L21/00

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11416 ,  H01L2224/11422 ,  H01L2224/11424 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/118 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13339 ,  H01L2224/13562 ,  H01L2224/13584 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/1379 ,  H01L2224/13794 ,  H01L2224/13809 ,  H01L2224/13813 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/13857 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/93 ,  H01L2225/06513 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2224/11 ,  H01L2924/00

摘要： A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

摘要翻译： 形成器件的方法包括提供衬底，以及在衬底上形成焊料凸点。 将次要元件引入邻近焊料凸块顶表面的区域。 然后对焊料凸块执行再流程以将次要元件驱动到焊料凸块中。

公开(公告)号：US20120018878A1

公开(公告)日：2012-01-26

申请号：US12843760

申请日：2010-07-26

申请人： Ming-Da Cheng ,  MIng-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

发明人： Ming-Da Cheng ,  MIng-Che Ho ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Cheng-Chung Lin ,  Hui-Jung Tsai ,  Zheng-Yi Lim

IPC分类号： H01L21/288 ,  H01L29/45

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/93 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11416 ,  H01L2224/11422 ,  H01L2224/11424 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/118 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11822 ,  H01L2224/11827 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/132 ,  H01L2224/13211 ,  H01L2224/13339 ,  H01L2224/13562 ,  H01L2224/13584 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13664 ,  H01L2224/1379 ,  H01L2224/13794 ,  H01L2224/13809 ,  H01L2224/13813 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/13857 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/93 ,  H01L2225/06513 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2224/11 ,  H01L2924/00

摘要： A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.

摘要翻译： 形成器件的方法包括提供衬底，以及在衬底上形成焊料凸点。 将次要元件引入邻近焊料凸块顶表面的区域。 然后对焊料凸块执行再流程以将次要元件驱动到焊料凸块中。

公开(公告)号：US09576830B2

公开(公告)日：2017-02-21

申请号：US13475790

申请日：2012-05-18

申请人： Hui-Min Huang ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Hui-Min Huang ,  Chih-Wei Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/687 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/67288 ,  H01L21/6838

摘要： A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.

摘要翻译： 一种用于调整晶片翘曲的方法，包括提供具有中心部分和边缘部分的晶片，并提供其上具有用于保持晶片的保持区域的保持台。 将晶片放置在保持台上，其中心部分高​​于边缘部分，然后按压到保持区域上，使得晶片通过自吸力被吸引并保持在保持台上。 根据晶片的翘曲量将晶片在预定温度下加热预定时间，以便实现基本上平坦的晶片或预定的晶片级。

公开(公告)号：US09123763B2

公开(公告)日：2015-09-01

申请号：US13271952

申请日：2011-10-12

申请人： Chen-Hua Yu ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Ming-Da Cheng ,  Chih-Wei Lin

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Ming-Da Cheng ,  Chih-Wei Lin

IPC分类号： H01L23/48 ,  H01L21/683 ,  H01L23/538 ,  H01L21/56 ,  H01L25/10 ,  H01L21/36 ,  H01L23/31 ,  H01L21/48 ,  H01L23/00 ,  H05K1/18 ,  H01L23/498

CPC分类号： H01L25/50 ,  H01L21/31051 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5383 ,  H01L24/16 ,  H01L24/19 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2225/06513 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H05K1/185 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2224/48

摘要： A package-on-package (PoP) structure comprises a first package and a second package. The first package comprises a first die, a second die, and a core material. The core material has a first surface and a second surface. A first redistribution layer (RDL) is on the first surface, and a second RDL is on the second surface. The first die is disposed in the core material between the first surface and the second surface. The second die is coupled to one of the first RDL and the second RDL. The second package comprises a third die and an interposer. The interposer has a first side and a second side. The third die is coupled to the second side of the interposer. The first package is coupled to the second package by first electrical connectors coupled to the second side of the interposer and the first RDL.

摘要翻译： 封装封装（PoP）结构包括第一封装和第二封装。 第一包装包括第一模具，第二模具和芯材料。 芯材料具有第一表面和第二表面。 第一再分配层（RDL）位于第一表面上，第二RDL位于第二表面上。 第一模具设置在第一表面和第二表面之间的芯材料中。 第二管芯耦合到第一RDL和第二RDL之一。 第二包装包括第三管芯和插入件。 插入器具有第一侧和第二侧。 第三裸片耦合到插入器的第二侧。 第一封装通过耦合到插入件的第二侧和第一RDL的第一电连接器耦合到第二封装。