公开(公告)号：US20160032451A1

公开(公告)日：2016-02-04

申请号：US14446098

申请日：2014-07-29

Applicant: Applied Materials, Inc.

Inventor： Shinichi KURITA ,  Robin L. TINER ,  Suhail ANWAR

IPC: C23C16/44 ,  B08B7/00

CPC classification number: C23C16/4405 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32853 ,  H01J37/32862

Abstract: Embodiments of the present disclosure provide an apparatus having a remote plasma clean source in which the remote plasma clean source delivers radicals from the remotely generated plasma to the chamber at a location disposed between a backing plate and a diffuser.

Abstract translation: 本公开的实施例提供了一种具有远程等离子体清洁源的装置，其中远程等离子体清洁源在设置在背板和扩散器之间的位置处将远离等离子体的等离子体的基团输送到室。

公开(公告)号：US20150221508A1

公开(公告)日：2015-08-06

申请号：US14608080

申请日：2015-01-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Shinichi KURITA ,  Srikanth V. RACHERLA ,  Suhail ANWAR

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/505

CPC classification number: H01L21/02565 ,  C23C16/24 ,  C23C16/407 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02554 ,  H01L21/0262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.

Abstract translation: 本公开的实施例通常可以提供一种用于形成薄膜晶体管器件的方法和装置，其包括使用多组分前体气体的铟镓锌氧化物（IGZO）层。 本公开的实施例可以提供等离子体增强化学气相沉积系统，其被配置为在大面积基板上形成IGZO层。 然而，应当理解，本公开在其他系统配置中具有实用性，例如其它类型的化学气相沉积系统和其中将多组分前体气体分配到处理室内和在处理室内的任何其它系统。

公开(公告)号：US20240234105A9

公开(公告)日：2024-07-11

申请号：US17971205

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Andrew C. LAM ,  Zeqiong ZHAO ,  Jianhua ZHOU ,  Hshiang AN ,  Suhail ANWAR ,  Yoshitake NAKAJIMA ,  Fu-ting CHANG

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01J37/32715 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32183 ,  H01J2237/0262 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.

公开(公告)号：US20230162947A1

公开(公告)日：2023-05-25

申请号：US17456236

申请日：2021-11-23

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Jianhua ZHOU ,  Shouqian SHAO ,  Suhail ANWAR

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/505

CPC classification number: H01J37/32119 ,  H01J37/32532 ,  C23C16/345 ,  C23C16/401 ,  C23C16/308 ,  C23C16/505 ,  H01J2237/332

Abstract: The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.

公开(公告)号：US20190096624A1

公开(公告)日：2019-03-28

申请号：US16122003

申请日：2018-09-05

Applicant: Applied Materials, Inc.

Inventor： Gaku FURUTA ,  Soo Young CHOI ,  Yi CUI ,  Robin L. TINER ,  Jinhyun CHO ,  Jiarui WANG ,  Suhail ANWAR

IPC: H01J29/07 ,  C23C16/458 ,  C23C16/04 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.

公开(公告)号：US20190043695A1

公开(公告)日：2019-02-07

申请号：US16031701

申请日：2018-07-10

Applicant: Applied Materials, Inc.

Inventor： Yui Lun WU ,  Jozef KUDELA ,  Carl A. SORENSEN ,  Suhail ANWAR

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52

Abstract: A method of processing a material layer on a substrate is provided. The method includes delivering RF power from an RF power source through a match network to a showerhead of a capacitively coupled plasma chamber; igniting a plasma within the capacitively coupled plasma chamber; measuring one or more phase angles of one or more harmonic signals of the RF power relative to a phase of a fundamental frequency of the RF power; and adjusting at least one phase angle of at least one harmonic signal of the RF power relative to the phase of the fundamental frequency of the RF power based on the one or more phase angle measurements.

公开(公告)号：US20180025890A1

公开(公告)日：2018-01-25

申请号：US15719465

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Soo Young CHOI ,  John M. WHITE ,  Qunhua WANG ,  Li HOU ,  Ki Woon KIM ,  Shinichi KURITA ,  Tae Kyung WON ,  Suhail ANWAR ,  Beom Soo PARK ,  Robin L. TINER

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/509 ,  C23C16/34

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

公开(公告)号：US20170352562A1

公开(公告)日：2017-12-07

申请号：US15171783

申请日：2016-06-02

Applicant: Applied Materials, Inc.

Inventor： Shinichi KURITA ,  Makoto INAGAWA ,  Hanzheng H. LIN ,  Takayuki MATSUMOTO ,  Suhail ANWAR

IPC: H01L21/67 ,  C23C16/04 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  H01J37/32 ,  H01L21/677 ,  C23C16/30

CPC classification number: H01L21/67167 ,  C23C14/566 ,  C23C16/042 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/32743 ,  H01J37/32788 ,  H01J37/32816 ,  H01J37/32899 ,  H01J37/32908 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3326 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68742

Abstract: A transfer chamber for a processing system suitable for processing a plurality of substrates and a method of using the same is provided. The transfer chamber includes a lid, a bottom disposed opposite the lid, a plurality of sidewalls sealingly coupling the lid to the bottom and defining an internal volume, wherein the plurality of sidewalls form the faces of a dodecagon. An opening is formed in each of the faces, wherein the opening is configured for a substrate to pass therethrough. A transfer robot is disposed in the internal volume, wherein the transfer robot has effectors configured to support the substrate through one opening to another opening.

公开(公告)号：US20170335459A1

公开(公告)日：2017-11-23

申请号：US15157076

申请日：2016-05-17

Applicant: Applied Materials, Inc.

Inventor： Young-jin CHOI ,  Beom Soo PARK ,  Dongsuh LEE ,  William Norman STERLING ,  Robin L. TINER ,  Shinichi KURITA ,  Suhail ANWAR ,  Soo Young CHOI ,  Yi CUI ,  Lia ZHAO ,  Dapeng WANG

IPC: C23C16/50 ,  C23C16/40 ,  C23C16/458 ,  H01L21/687 ,  H01L21/285 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/402 ,  C23C16/4581 ,  C23C16/4583 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785

Abstract: Embodiments described herein generally relate to a substrate support assembly. The substrate support assembly includes a support plate and a ceramic layer. The support plate has a top surface. The top surface includes a substrate receiving area configured to support a large area substrate and an outer area located outward of the substrate receiving area.