摘要:
A flip chip mounting process or a bump-forming process according to the present invention is characterized in that electrically-conductive particles are fixed on electrodes formed on an electronic component. A composition comprising solder powder, a convection additive and a resin component is supplied onto a surface of the electronic component, the surface is provided with the electrodes. The supplied composition is heated up to a temperature enabling the solder powder to melt. As a result, the convection additive boils or is decomposed so as to generate a gas. The generated gas produces a convection phenomenon within the supplied composition. Since the convection phenomenon promotes the movement of the solder powder, the solder powder can move freely within the composition. The electrically-conductive particles serve as nuclei for the solder powder to self-assemble and grow. As a result, the molten solder powder is allowed to self-assemble and grow in the vicinity of the electrically-conductive particles, which leads to a formation of connections or bumps.
摘要:
A flexible substrate comprises a film, a first insulating resin layer on a front face of the film, a second insulating resin layer on a rear face of the film, a front-sided wiring pattern embedded in the first insulating resin layer, and a rear-sided wiring pattern embedded in the second insulating resin layer. A surface of the front-sided wiring pattern is flush with a surface of the first insulating resin layer, and a surface of the rear-sided wiring pattern is flush with a surface of the second insulating resin layer. A part of at least one of the front-sided wiring pattern and the rear-sided wiring pattern is dented toward a part of the other of the at least one of the front-sided wiring pattern and the rear-sided wiring pattern such that a portion of the front-sided wiring pattern and a portion of the rear-sided wiring pattern are jointed to each other to form a junction.
摘要:
A flip chip mounting process or a bump-forming process according to the present invention is characterized in that electrically-conductive particles are fixed on electrodes formed on an electronic component. A composition comprising solder powder, a convection additive and a resin component is supplied onto a surface of the electronic component, the surface is provided with the electrodes. The supplied composition is heated up to a temperature enabling the solder powder to melt. As a result, the convection additive boils or is decomposed so as to generate a gas. The generated gas produces a convection phenomenon within the supplied composition. Since the convection phenomenon promotes the movement of the solder powder, the solder powder can move freely within the composition. The electrically-conductive particles serve as nuclei for the solder powder to self-assemble and grow. As a result, the molten solder powder is allowed to self-assemble and grow in the vicinity of the electrically-conductive particles, which leads to a formation of connections or bumps.
摘要:
A module with a built-in circuit component of the present invention includes an electric insulating layer, a pair of wiring layers provided on both principal planes of the electric insulating layer, a plurality of via conductors electrically connecting the pair of wiring layers and passing through the electric insulating layer in a thickness direction thereof, and a circuit component buried in the electric insulating layer, wherein the plurality of via conductors are disposed in a circumferential portion of the electric insulating layer in accordance with a predetermined rule. The plurality of via conductors are placed at an interval, for example, so as to form at least one straight line, in a cut surface of the electric insulating layer in a direction parallel to a principal plane thereof.
摘要:
A circuit board for flip-chip packaging is provided which can achieve the connection reliability of a semiconductor device and the circuit board. The circuit board for flip-chip packaging includes, on a surface of a substrate (6), wiring patterns (1), connection pads (2) for flip-chip packaging, and a solder resist (3) having openings (4) formed on the connection pads (2). In the circuit board, conductive members (5) are formed in the openings (4).
摘要:
At least one or more dark current reducing layers having a quantum well structure are provided at an end portion in a stacking direction of an infrared detecting section in which quantum dot layers are stacked.
摘要:
The present invention relates to improved promoters and utilization thereof, in particular to promoters which are improved so as not to undergo methylation in the course of constructing transformants, and utilization thereof. The improved promoters of the present invention are represented by the following (1) and (2): (1) a DNA comprising the nucleotide sequences shown in SEQ ID NOS: 1 to 4; (2) a DNA comprising a nucleotide sequence consisting of the nucleotide sequences shown in SEQ ID NOS 1 to 4, wherein one to several nucleotides are deleted, added or inserted and the deleted, added or inserted sequence is free from any consecutive sequences represented by CG, CAG, CTG, CCG or CGG; the DNA having promoter activity. According to the present invention, the expression efficiency of a structural gene can be enhanced even in a plant, e.g. chrysanthemum, which has weak expression of the structural gene by a cauliflower mosaic virus 35S promoter which has been considered a high expression promoter for plants.
摘要:
The present invention relates to improved promoters and utilization thereof, in particular to promoters which are improved so as not to undergo methylation in the course of constructing transformants, and utilization thereof. According to the present invention, the expression efficiency of a structural gene can be enhanced even in a plant, e.g. chrysanthemum, which has weak expression of the structural gene by a cauliflower mosaic virus 35S promoter which as been considered a high expression promoter for plants.
摘要:
A porous film or sheet including a resin composition mainly of an ultra-high molecular weight polyethylene having a viscosity-average molecular weight of not less than 500,000, and having a thickness of 10 to 100 .mu.m, an air permeability of 20 to 2,000 sec/100 cc, a porosity of 15 to 80%, a pin puncture strength (per 25 .mu.m of film thickness) of not less than 120 g, a thermal-shut down temperature of 90.degree. to 150.degree. C. and a heat puncture temperature of not less than 160.degree. C., and a process for producing the same.
摘要:
A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first crystal surface and a second crystal surface which are crystallographically non-equivalent to each other on the substrate, introducing particles comprising constituent elements of the epitaxial layers into a region in the vicinity of the substrate, the particles including at least metal-organic molecules containing one of the elements constituting the epitaxial layers, decomposing the metal-organic molecules such that the layer constituting element therein is released as a result of the decomposition, and depositing the aforesaid particles including the element released by the decomposition of the metal-organic molecules on the first and second crystal surfaces so that a first epitaxial layer and a second epitaxial layer, respectively differing in properties from each other, are grown on respective the first and second crystal surfaces, the step of deposition being performed such that the growth of the first and second epitaxial layers is controlled by the decomposition of the metal-organic molecule.