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公开(公告)号：US20140339587A1
公开(公告)日：2014-11-20
申请号：US14279890
申请日：2014-05-16
Applicant: NICHIA CORPORATION
Inventor： Hirofumi KAWAGUCHI , Akinori YONEDA , Hisashi KASAI , Kazuki KASHIMOTO , Masafumi ITASAKA
CPC classification number: H01L33/405 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/42 , H01L2933/0016
Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.
Abstract translation: 一种半导体发光元件，具有：半导体层叠体; 包含设置在p型半导体层的上表面上的Ag的全表面电极; 覆盖全表面电极的表面的覆盖电极设置成在全表面电极的外边缘处与p型半导体层的上表面接触，并由Al基金属材料制成; p侧电极，设置在所述盖电极的表面的一部分上; 覆盖所述覆盖电极的其他表面并且包含形成所述覆盖电极的金属材料的氧化物的金属氧化物膜; 并且提供由氧化物制成并覆盖金属氧化物膜的表面的绝缘膜。
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公开(公告)号：US20140227813A1
公开(公告)日：2014-08-14
申请号：US14177329
申请日：2014-02-11
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Shinji NAKAMURA , Akiyoshi KINOUCHI , Yoshiyuki AIHARA , Hirokazu SASA
CPC classification number: H01L33/387 , H01L33/0095 , H01L33/44 , H01L33/62
Abstract: A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.
Abstract translation: 一种用于倒装芯片安装的发光元件，其具有平坦的安装表面，其允许晶片的街道宽度的减小。 在发光元件中，填充凸起并使上表面变平的绝缘构件形成有宽度等于或大于分界线上的街道宽度的区域的边缘，使得在 分割晶片沿着分割线的时间，绝缘构件不被处理，这允许以小的宽度设计街道。
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公开(公告)号：US20180316157A1
公开(公告)日：2018-11-01
申请号：US16031683
申请日：2018-07-10
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Shinya SONOBE , Hiroaki YUTO
Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.
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公开(公告)号：US20180102460A1
公开(公告)日：2018-04-12
申请号：US15840669
申请日：2017-12-13
Applicant: NICHIA CORPORATION
Inventor： Hirofumi KAWAGUCHI , Akinori YONEDA , Hisashi KASAI , Kazuki KASHIMOTO , Masafumi ITASAKA
CPC classification number: H01L33/405 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/42 , H01L2933/0016
Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.
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15.发明申请公开(公告)号：US20160118767A1
公开(公告)日：2016-04-28
申请号：US14920134
申请日：2015-10-22
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Shinya SONOBE , Hiroaki YUTO
IPC: H01S5/022 , H05K1/09 , H05K3/18 , H05K3/06 , C23C14/18 , C25D3/38 , C25D7/12 , C25D5/02 , C23C14/34 , H05K1/03 , H05K3/16
CPC classification number: H01S5/02272 , C23C14/185 , C23C14/34 , C25D3/38 , C25D5/022 , C25D7/123 , H01S5/02212
Abstract: The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.
Abstract translation: 该方法包括以下步骤：制备包括上表面10a和下表面10b的单晶SiC，并且具有从上表面10a穿透到下表面10b的微管11; 在单晶SiC的上表面10a上形成由金属材料制成的第一晶种层21; 并且在第一晶种层21上形成第一镀层31，以便使用电镀方法封闭微管11的上端。
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Patent Agency Ranking
16.发明申请METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT HAVING THICK METAL BUMP 审中-公开制造具有厚金属层的氮化物半导体发光元件的方法公开(公告)号：US20160079505A1
公开(公告)日：2016-03-17
申请号：US14945215
申请日：2015-11-18
Applicant: Nichia Corporation
Inventor： Akinori YONEDA , Hirofumi KAWAGUCHI , Kouichiroh DEGUCHI
CPC classification number: H01L33/62 , H01L24/03 , H01L24/04 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2224/0345 , H01L2224/03472 , H01L2224/0401 , H01L2224/05564 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/06102 , H01L2224/11462 , H01L2224/13007 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2933/0016 , H01L2933/0066
Abstract: A manufacturing method of a flip-chip nitride semiconductor light emitting element includes a step of providing a nitride semiconductor light emitting element structure; a protective layer forming step; a first resist pattern forming step; a protective layer etching step; a first metal layer forming step; a first resist pattern removing step; a third metal layer forming step; a second resist pattern forming step; a second metal layer forming step; a second resist pattern removing step; and a third metal layer removing step.
Abstract translation: 倒装芯片氮化物半导体发光元件的制造方法包括：提供氮化物半导体发光元件结构的工序; 保护层形成步骤; 第一抗蚀图案形成步骤; 保护层蚀刻步骤; 第一金属层形成步骤; 第一抗蚀剂图案去除步骤; 第三金属层形成步骤; 第二抗蚀图案形成步骤; 第二金属层形成步骤; 第二抗蚀剂图案去除步骤; 和第三金属层去除步骤。
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公开(公告)号：US20150333236A1
公开(公告)日：2015-11-19
申请号：US14808706
申请日：2015-07-24
Applicant: Nichia Corporation
Inventor： Akinori YONEDA , Shinji NAKAMURA , Yoshiyuki AIHARA , Hirokazu SASA
CPC classification number: H01L33/507 , H01L24/18 , H01L33/38 , H01L33/46 , H01L33/505 , H01L33/54 , H01L33/58 , H01L33/60 , H01L2924/12041 , H01L2924/15788 , H01L2933/005 , H01L2924/00
Abstract: To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements.
Abstract translation: 为了提供低成本地制造发光装置的方法，该发光装置转换由发光元件辐射的光的波长并发射，所述方法包括：在透光性基板上形成荧光体层; 以规定的间隔配置多个发光元件，所述发光元件具有分别设置有正极和负极的电极形成面，并且将电极形成面布置在顶部; 包埋含有荧光体颗粒的树脂，使得嵌入树脂的上表面不会在包含电极形成面的平面上凸出; 并固化树脂，然后将固化树脂，荧光体层和透光性基板切割分割成多个发光器件，每个发光器件包括一个或多个发光元件。
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公开(公告)号：US20150311410A1
公开(公告)日：2015-10-29
申请号：US14745120
申请日：2015-06-19
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Akiyoshi KINOUCHI , Hisashi KASAI , Yoshiyuki AIHARA , Hirokazu SASA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
Abstract translation: 发光器件包括具有p型半导体层和n型半导体层的半导体芯片，该半导体芯片适于在p型半导体层和n型半导体层之间发光; p侧焊盘电极，设置在所述半导体芯片的上表面侧并且位于所述p型半导体层上方; 设置在所述半导体芯片的上表面侧并且位于所述n型半导体层上的n侧焊盘电极; 设置成覆盖半导体芯片的上表面的树脂层; p侧连接电极和n侧连接电极，设置在树脂层的外表面并位于半导体芯片的上表面侧; 以及设置在树脂中的金属线。 金属线适于连接p侧焊盘电极和p侧连接电极之间以及n侧焊盘电极和n侧连接电极之中的至少一个。
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公开(公告)号：US20150207042A1
公开(公告)日：2015-07-23
申请号：US14599068
申请日：2015-01-16
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Shinji NAKAMURA , Yoshiyuki AIHARA
IPC: H01L33/50
CPC classification number: H01L33/52 , H01L24/45 , H01L33/0095 , H01L33/38 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4903 , H01L2224/49107 , H01L2924/181 , H01L2933/0033 , H01L2933/005 , H01L2933/0066 , H01L2924/20752 , H01L2924/20753 , H01L2924/00014 , H01L2924/00
Abstract: A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements.
Abstract translation: 一种制造发光器件的方法包括：在半导体堆叠层体的第一侧上制备排列在生长衬底上的多个发光元件的晶片，形成树脂层，该树脂层包括分别连接到p侧的金属线 电极和n侧电极，通过在发光元件与作为内侧的内部导电构件的金属线的露出端面之间的边界区域中的上表面侧从上表面侧除去树脂层的至少一部分而形成沟槽 表面限定凹槽，形成分别连接到金属线的暴露端表面的用于外部连接的电极，以及将晶片分成多个单独的发光元件。
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公开(公告)号：US20140319567A1
公开(公告)日：2014-10-30
申请号：US14261136
申请日：2014-04-24
Applicant: NICHIA CORPORATION
Inventor： Akinori YONEDA , Akiyoshi KINOUCHI , Hisashi KASAl , Yoshiyuki AIHARA , Hirokazu SASA , Shinji NAKAMURA
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.
Abstract translation: 所提供的光包括包括p型半导体层和n型半导体层的半导体芯片，所述半导体芯片适于在p型半导体层和n型半导体层之间发光; p侧焊盘电极，设置在所述半导体芯片的上表面侧并且位于所述p型半导体层上方; 设置在所述半导体芯片的上表面侧并且位于所述n型半导体层上的n侧焊盘电极; 设置成覆盖半导体芯片的上表面的树脂层; p侧连接电极和n侧连接电极，设置在树脂层的外表面并位于半导体芯片的上表面侧; 以及设置在树脂中的金属线。 金属线适于连接p侧焊盘电极和p侧连接电极之间以及n侧焊盘电极和n侧连接电极之中的至少一个。
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