公开(公告)号：US20170154781A1

公开(公告)日：2017-06-01

申请号：US15431049

申请日：2017-02-13

Applicant: Tokyo Electron Limited

Inventor： Alok Ranjan ,  Akiteru Ko

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311 ,  H01L29/51

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/28123 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/6831 ,  H01L29/517 ,  H01L29/518

Abstract: A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).

公开(公告)号：US09644271B1

公开(公告)日：2017-05-09

申请号：US15154715

申请日：2016-05-13

Applicant: Lam Research Corporation

Inventor： Douglas Keil ,  Ishtak Karim ,  Yaswanth Rangineni ,  Adrien LaVoie ,  Yukinori Sakiyama ,  Edward Augustyniak ,  Karl Leeser ,  Chunhai Ji

IPC: H01L21/00 ,  C23C16/513 ,  H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/45525 ,  C23C16/50 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32128 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0228

Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

公开(公告)号：US09583316B2

公开(公告)日：2017-02-28

申请号：US14965720

申请日：2015-12-10

Applicant: Lam Research Corporation

Inventor： Keren Jacobs Kanarik

IPC: C03C25/68 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32128 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32165 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4682

Abstract: A method for processing substrate in a processing chamber, which has at least one plasma generating source and a gas source for providing process gas into the chamber, is provided. The method includes exciting the plasma generating source with an RF signal having RF frequency. The method further includes pulsing the gas source, using at least a first gas pulsing frequency, such that a first process gas is flowed into the chamber during a first portion of a gas pulsing period and a second process gas is flowed into the chamber during a second portion of the gas pulsing period, which is associated with the first gas pulsing frequency. The second process gas has a lower reactant-gas-to-inert-gas ratio relative to a reactant-gas-to-inert-gas ratio of the first process gas. The second process gas is formed by removing at least a portion of a reactant gas flow from the first process gas.

Abstract translation: 提供了一种在处理室中处理基板的方法，其具有至少一个等离子体产生源和用于向处理室提供处理气体的气体源。 该方法包括用具有RF频率的RF信号激发等离子体发生源。 该方法还包括使用至少第一气体脉冲频率脉冲气源，使得第一处理气体在气体脉动期间的第一部分期间流入室中，并且第二处理气体在气体脉冲期间流入室 气体脉动周期的第二部分，其与第一气体脉动频率相关联。 第二工艺气体相对于第一工艺气体的反应物 - 气体 - 惰性气体比具有较低的反应物 - 气体 - 惰性气体比。 通过从第一工艺气体中除去至少一部分反应气体流而形成第二工艺气体。

公开(公告)号：US20160163539A9

公开(公告)日：2016-06-09

申请号：US14335785

申请日：2014-07-18

Applicant: Lam Research Corporation

Inventor： Hu Kang ,  Wanki Kim ,  Adrien LaVoie

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/45542 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32724 ,  H01J37/32917 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/76831 ,  H01L21/76898 ,  H01L27/11582

Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes. Conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls. The disclosed embodiments achieve more uniform film quality as evidenced by more uniform wet etch rates and electrical properties throughout the film. The disclosed embodiments may use one or more of a relatively high deposition temperature, a relatively high RF power for generating the plasma, and/or relatively long RF plasma exposure duration during each cycle of the PEALD reaction.

公开(公告)号：US09312105B2

公开(公告)日：2016-04-12

申请号：US14730394

申请日：2015-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira Takahashi ,  Kei Nakayama ,  Yoshiki Igarashi ,  Shin Hirotsu

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01J37/32165 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/76802

Abstract: Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON.

Abstract translation: 公开了一种用于蚀刻加工对象物体的绝缘膜的方法。 该方法包括：在第一项中，周期性地切换高频功率的ON和OFF，以激发含有碳氟化合物的处理气体，并将其供应到等离子体处理装置的处理容器中; 并且在第一项之后的第二项中，将高频功率设定为连续接通，以激励供给到处理容器中的处理气体。 在由高频接通的术语和第一项中高频功率关闭的术语组成的一个周期中，第二项长于高频功率导通的术语。

公开(公告)号：US09305750B2

公开(公告)日：2016-04-05

申请号：US12728112

申请日：2010-03-19

Applicant: Maolin Long ,  Seyed Jafar Jafarian-Tehrani

Inventor： Maolin Long ,  Seyed Jafar Jafarian-Tehrani

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32174 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32183 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4667

Abstract: A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.

Abstract translation: 一种用于产生等离子体以处理至少晶片的等离子体处理系统。 等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。 等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。 等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。 等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。 并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。 并联电路可以包括彼此并联电连接的电感器和可变电容器。

公开(公告)号：US20160020114A1

公开(公告)日：2016-01-21

申请号：US14336079

申请日：2014-07-21

Applicant: Tokyo Electron Limited

Inventor： Andrew Metz

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32137 ,  H01L21/31122 ,  H01L21/76802 ,  H01L21/76897

Abstract: Techniques herein include methods for etching an oxide layer with greater selectivity to underlying channel materials. Such an increase in etch selectivity reduces damage to channel materials thereby providing more reliable and better performing semiconductor devices. Techniques herein include using fluorocarbon gas to feed a plasma to create etchants, and also creating a flux of ballistic electrons to treat a given substrate during an etch process.

Abstract translation: 本文的技术包括用于以较高选择性蚀刻氧化物层的方法用于下层通道材料。 这种蚀刻选择性的增加降低了对通道材料的损害，从而提供了更可靠和性能更好的半导体器件。 本文的技术包括使用碳氟化合物气体来供应等离子体以产生蚀刻剂，并且还在蚀刻工艺期间产生用于处理给定衬底的弹道电子流。

公开(公告)号：US20160020108A1

公开(公告)日：2016-01-21

申请号：US14869330

申请日：2015-09-29

Applicant: Tokyo Electron Limited

Inventor： Alok Ranjan ,  Akiteru Ko

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32697 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/28123 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/6831 ,  H01L29/517 ,  H01L29/518

Abstract: A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed on the high-k layer. The method further includes transferring a pattern formed in the gate layer to the high-k layer using a pulsed bias plasma etching process, and selecting a process condition for the pulsed bias plasma etching process to achieve a silicon recess formed in the substrate having a depth less than 2 nanometer (nm).

公开(公告)号：US20150354059A1

公开(公告)日：2015-12-10

申请号：US14297745

申请日：2014-06-06

Applicant: Lam Research Corporation

Inventor： Hu Kang ,  Adrien LaVoie

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01J37/32853 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32137 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/32926 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/02057

Abstract: Systems and methods for operating a substrate processing system include processing a substrate arranged on a substrate support in a processing chamber. At least one of precursor gas and/or reactive gas is supplied during the processing. The substrate is removed from the processing chamber. Carrier gas and purge gas are selectively supplied to the processing chamber. RF plasma is generated in the processing chamber during N cycles, where N is an integer greater than one. The RF plasma is on for a first period and off for a second period during each of the N cycles. The purge gas is supplied during at least part of each of the N cycles.

Abstract translation: 用于操作衬底处理系统的系统和方法包括处理布置在处理室中的衬底支撑件上的衬底。 在处理期间供应至少一种前体气体和/或反应性气体。 将衬底从处理室中取出。 选择性地将载气和吹扫气体供给到处理室。 在N个周期内，在处理室中产生RF等离子体，其中N是大于1的整数。 RF等离子体在第一周期期间导通，并且在N个周期的每一个期间关闭第二周期。 净化气体在N个循环的每一个的至少一部分期间供应。

公开(公告)号：US20150303032A1

公开(公告)日：2015-10-22

申请号：US14581348

申请日：2014-12-23

Applicant: Mattson Technology, Inc.

Inventor： Valery Godyak

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32137 ,  H01J37/32449 ,  H01J37/3266 ,  H05H1/46

Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling element and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

Abstract translation: 提供了一种用于在制造装置中用射频感应等离子体处理衬底的方法和装置。 用具有一个或多个电感耦合元件的感应等离子体施加器来维持感应等离子体。 电感耦合元件和处理室内部之间有薄窗。 各种实施例在感应耦合元件中具有磁通量聚集器和散布在感应耦合元件之间的馈送气体孔。 薄窗，磁通集中器和散布的进料气孔可用于实现均匀加工，高功率转移效率和施加器与等离子体之间的高度耦合度。 在一些实施例中，使用平衡电压来抑制电容电流以为感应耦合元件供电。