公开(公告)号：US20170330737A1

公开(公告)日：2017-11-16

申请号：US15668621

申请日：2017-08-03

Applicant: TRUMPF Huettinger Sp. z o. o.

Inventor： Marcin Zelechowski ,  Piotr Lach

IPC: H01J37/34 ,  H01J37/244 ,  G01R31/12 ,  H01J37/24

CPC classification number: H01J37/3476 ,  G01R31/1254 ,  H01J37/241 ,  H01J37/244 ,  H01J37/32944 ,  H01J37/3444 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/3322

Abstract: An arc treatment device includes an arc detector operable to detect whether an arc is present in a plasma chamber, an arc energy determiner operable to determine an arc energy value based on an energy supplied to the plasma chamber while the arc is present in the plasma chamber, and a break time determiner operable to determine a break time based on the determined arc energy value.

公开(公告)号：US20170178879A1

公开(公告)日：2017-06-22

申请号：US15452896

申请日：2017-03-08

Applicant: MKS Instruments, Inc.

Inventor： Jesse N. KLEIN ,  David C. HALSTEAD ,  Michael R. GILBERT

IPC: H01J37/34 ,  C23C14/54 ,  H01J37/32

CPC classification number: H01J37/3476 ,  C23C14/54 ,  H01J37/32027 ,  H01J37/32055 ,  H01J37/32935 ,  H01J37/32944 ,  H01J37/34 ,  H01J37/3444 ,  H01J2237/0206

Abstract: A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

公开(公告)号：US20170140907A1

公开(公告)日：2017-05-18

申请号：US15420472

申请日：2017-01-31

Applicant: CANON ANELVA CORPORATION

Inventor： Taichi HIROMI ,  Hidetoshi SHIMOKAWA ,  Atsuyuki ICHIKAWA

IPC: H01J37/34 ,  G01L21/00

CPC classification number: H01J37/3447 ,  C23C14/564 ,  C23C16/4401 ,  G01L21/00 ,  H01J37/32816 ,  H01J37/32935 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3476 ,  H01J2237/026 ,  H01J2237/24585 ,  H01J2237/3322 ,  H01L21/203 ,  H01L21/285 ,  H01L21/2855

Abstract: A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space. The opening portion is formed so that a pressure gauge capable of measuring the pressure in the sputtering space can be attached, and the shield member is arranged so that at least a part of the shield member is buried in the concave portion.

公开(公告)号：US09613784B2

公开(公告)日：2017-04-04

申请号：US12174893

申请日：2008-07-17

Applicant: Jesse N. Klein ,  David C. Halstead ,  Michael R. Gilbert

Inventor： Jesse N. Klein ,  David C. Halstead ,  Michael R. Gilbert

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3476 ,  C23C14/54 ,  H01J37/32027 ,  H01J37/32055 ,  H01J37/32935 ,  H01J37/32944 ,  H01J37/34 ,  H01J37/3444 ,  H01J2237/0206

Abstract: A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

公开(公告)号：US09536715B2

公开(公告)日：2017-01-03

申请号：US14234699

申请日：2012-09-14

Applicant: Shiro Tsukamoto

Inventor： Shiro Tsukamoto

IPC: C23C14/00 ,  H01J37/34 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32

CPC classification number: H01J37/3476 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/3288 ,  H01J37/34 ,  H01J37/3447 ,  Y10T29/49748

Abstract: The present invention relates to a method for recycling a tantalum coil for sputtering that is disposed between a substrate and a sputtering target. The method for recycling a tantalum coil for sputtering is characterized in that the whole or partial surface of a spent tantalum coil is subject to cutting (cutting is performed until a re-deposited film and knurling traces are eliminated) so as to eliminate the re-deposited film that was formed during sputtering, and knurling is newly performed to the cut portion. While sputtered grains are accumulated (re-deposited) on the surface of the tantalum coil disposed between the substrate and the sputtering target during sputtering, by eliminating the sputtered grains accumulated on the spent coil by way of cutting after the sputtering is complete, the tantalum coil can be efficiently recycled. Thus, provided is technology capable of lean manufacturing of new coils, improving productivity, and stably providing such coils.

Abstract translation: 本发明涉及设置在基板和溅射靶之间的用于再循环用于溅射的钽线圈的方法。 用于再循环用于溅射的钽线圈的方法的特征在于，废钽线圈的整个或部分表面被切割（进行切割直到重新淀积的膜和滚花痕迹被消除），以便消除重新 在溅射期间形成的沉积膜，并且对切割部分新进行滚花。 当在溅射期间溅射的晶粒在设置在衬底和溅射靶之间的钽线圈的表面上积累（重新沉积）时，通过在溅射完成之后通过切割消除积聚在废线圈上的溅射晶粒，钽 线圈可以有效回收。 因此，提供了能够精密制造新线圈的技术，提高生产率并稳定地提供这种线圈。

公开(公告)号：US20160276583A1

公开(公告)日：2016-09-22

申请号：US15168898

申请日：2016-05-31

Applicant: CANON ANELVA CORPORATION

Inventor： Yuichi Otani ,  Takuya Seino

IPC: H01L43/12 ,  H01J37/34 ,  H01F10/12 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  C23C14/34 ,  H01L43/08

CPC classification number: H01L43/12 ,  C23C14/081 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/352 ,  G01R33/0052 ,  G01R33/098 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3272 ,  H01F41/307 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3476 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.

Abstract translation: 一种方法包括：当在包括基板的正面的平面上的第一绝缘体靶的投影平面处于第一状态时，通过溅射第一绝缘体靶来形成膜的第一成膜工艺; 以及第二成膜工艺，当形成在包括衬底的前表面的平面上的第二绝缘体靶的投影平面处于与第一状态不同的第二状态时，通过溅射第二绝缘体靶来形成膜。 第二成膜工艺提供了具有第二特征变化的绝缘膜，该第二特征变化具有与通过第一成膜工艺提供的膜中的第一特征变化相反的倾向，第一特征变化从基板的中心部分到周边部分发生， 所述第二特征变化至少部分地从所述中心部分发生到所述周边部分。

公开(公告)号：US20160108515A1

公开(公告)日：2016-04-21

申请号：US14892268

申请日：2014-05-23

Applicant: EVATEC ADVANCED TECHNOLOGIES AG

Inventor： MOHAMED ELGHAZZALI ,  Jurgen WEICHART

IPC: C23C14/34 ,  C23C14/02 ,  C23F4/00 ,  C23C14/04 ,  H01J37/34 ,  H01J37/32 ,  C23C14/06 ,  C23C14/58

CPC classification number: C23C14/34 ,  C23C14/022 ,  C23C14/046 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/5826 ,  C23C14/5873 ,  C23F4/00 ,  H01J37/32431 ,  H01J37/3429 ,  H01J37/3476

Abstract: Vias of at least approx. 1:1 aspect ratio in substrates are filled with material which exhibits a thermally driven amorphous/crystalline phase change. This is performed within a vacuum process chamber. During a first timespan the material is sputter-deposited by DC sputtering from a material target. In a subsequent timespan a void, which may remain in the via as material covered by the addressed sputtering, is opened by etching performed with the help of an inductively coupled plasma generated by an Rf driven electric coil and applying to the substrate with the via an Rf bias.

Abstract translation: 至少大约有通风口 衬底中的1：1长宽比填充有表现出热驱动的非晶/晶相变的材料。 这在真空处理室内进行。 在第一次时间段期间，材料通过DC溅射从材料靶溅射沉积。 在随后的时间段中，可以通过由寻址的溅射覆盖的材料保留在通孔中的空隙通过借助于由Rf驱动的电线圈产生的电感耦合等离子体进行的蚀刻而被打开，并且通过通孔 Rf偏差。

公开(公告)号：US20160079045A1

公开(公告)日：2016-03-17

申请号：US14948481

申请日：2015-11-23

Applicant: CANON ANELVA CORPORATION

Inventor： Koji TSUNEKAWA ,  Masahiro SUENAGA ,  Takeo KONNO

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3476 ,  C23C14/3464 ,  C23C14/505 ,  C23C14/54 ,  C23C14/542 ,  G11B5/3906 ,  G11B5/3909 ,  H01J37/32733 ,  H01J37/34 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/3473 ,  H01J2237/20214 ,  H01J2237/24578 ,  H01J2237/332

Abstract: A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.

公开(公告)号：US09206500B2

公开(公告)日：2015-12-08

申请号：US12212844

申请日：2008-09-18

Applicant: Boris Druz ,  Roger P. Fremgen, Jr. ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss ,  Piero Sferlazzo

Inventor： Boris Druz ,  Roger P. Fremgen, Jr. ,  Alan V. Hayes ,  Viktor Kanarov ,  Robert Krause ,  Ira Reiss ,  Piero Sferlazzo

IPC: C23C14/04 ,  C23C14/22 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3488 ,  C23C14/044 ,  C23C14/221 ,  C23C14/46 ,  H01J37/20 ,  H01J37/302 ,  H01J37/317 ,  H01J37/32752 ,  H01J37/3441 ,  H01J37/3476 ,  H01J2237/0245 ,  H01J2237/045 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/30472 ,  H01J2237/3146

Abstract: Method and apparatus for processing a substrate with an energetic particle beam. Features on the substrate are oriented relative to the energetic particle beam and the substrate is scanned through the energetic particle beam. The substrate is periodically indexed about its azimuthal axis of symmetry, while shielded from exposure to the energetic particle beam, to reorient the features relative to the major dimension of the beam.

Abstract translation: 用能量粒子束处理衬底的方法和设备。 衬底上的特征相对于能量粒子束定向，并且通过能量粒子束扫描衬底。 衬底围绕其方位角对称轴周期性地被索引，同时被屏蔽以防止暴露于能量粒子束，以相对于束的主要尺寸重新定向特征。

公开(公告)号：US09007674B2

公开(公告)日：2015-04-14

申请号：US13763505

申请日：2013-02-08

Applicant: View, Inc.

Inventor： Sridhar K. Kailasam ,  Robin Friedman ,  Dane Gillaspie ,  Anshu A. Pradhan ,  Robert Rozbicki ,  Disha Mehtani

IPC: G02F1/15 ,  G02F1/153 ,  G02F1/155 ,  H01B5/14 ,  H01B13/00

CPC classification number: G02F1/1533 ,  C23C14/028 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  G02F1/1309 ,  G02F1/133345 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/508 ,  H01B5/14 ,  H01B13/00 ,  H01J37/3429 ,  H01J37/3476

Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Abstract translation: 电致变色装置和方法可以采用增加缺陷缓解绝缘层，防止电子传导层和/或电致变色层接触相反极性的层，并在缺陷形成的区域中产生短路。 在一些实施例中，提供封装层以封装颗粒并防止它们从器件堆叠中排出，并且在后续层沉积时冒着短路。 绝缘层可具有在约1和108欧姆 - 厘米之间的电阻率。 在一些实施例中，绝缘层含有一种或多种以下金属氧化物：氧化铝，氧化锌，氧化锡，氧化硅铝，氧化铈，氧化钨，氧化镍氧化物和氧化铟锡氧化物。 也可以使用硬质合金，氮化物，氧氮化物和碳氧化物。