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92 条记录 (耗时 0.025 秒)

    Through-silicon via with scalloped sidewalls
    28.
    发明授权
    Through-silicon via with scalloped sidewalls 有权
    通硅硅通孔与扇形侧壁

    公开(公告)号：US08049327B2

    公开(公告)日：2011-11-01

    申请号：US12348650

    申请日：2009-01-05

    申请人： Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ming-Fa Chen ,  Chen-Shien Chen

    发明人： Chen-Cheng Kuo ,  Chih-Hua Chen ,  Ming-Fa Chen ,  Chen-Shien Chen

    IPC分类号： H01L23/04

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device having one or more through-silicon vias (TSVs) is provided. The TSVs are formed such that sidewalls of the TSVs have a scalloped surface. In an embodiment, the sidewalls of the TSVs are sloped wherein a top and bottom of the TSVs have different dimensions. The TSVs may have a V-shape wherein the TSVs have a wider dimension on a circuit side of the substrate, or an inverted V-shape wherein the TSVs have a wider dimension on a backside of the substrate. The scalloped surfaces of the sidewalls and/or sloped sidewalls allow the TSVs to be more easily filled with a conductive material such as copper.

    摘要翻译： 提供了具有一个或多个穿硅通孔（TSV）的半导体器件。 TSV形成为使得TSV的侧壁具有扇形表面。 在一个实施例中，TSV的侧壁是倾斜的，其中TSV的顶部和底部具有不同的尺寸。 TSV可以具有V形，其中TSV在衬底的电路侧具有更宽的尺寸，或者是倒V形，其中TSV在衬底的背面具有更宽的尺寸。 侧壁和/或倾斜侧壁的扇形表面允许TSV更容易地用诸如铜的导电材料填充。

    METHOD OF FORMING THROUGH SILICON VIA WITH DUMMY STRUCTURE
    29.
    发明申请
    METHOD OF FORMING THROUGH SILICON VIA WITH DUMMY STRUCTURE 有权
    通过多孔结构形成硅的方法

    公开(公告)号：US20110217841A1

    公开(公告)日：2011-09-08

    申请号：US13112347

    申请日：2011-05-20

    申请人： Chih-Hua CHEN ,  Chen-Shien CHEN ,  Chen-Cheng KUO ,  Wen-Wei SHEN

    发明人： Chih-Hua CHEN ,  Chen-Shien CHEN ,  Chen-Cheng KUO ,  Wen-Wei SHEN

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a through silicon via (TSV) structure includes forming an interconnect pad over a substrate. An under layer is formed over the interconnect pad. A vertical conductive post is formed at least partially through the substrate. At least one dummy structure is formed at least partially through the under layer. A top pad is formed over the dummy structure and the vertical conductive post. The top pad covers a wider area than a cross section of the vertical conductive post. The interconnect pad is electrically connected to the top pad. The dummy structure connects the top pad and the under layer thereby fastening the top pad and the interconnect pad.

    摘要翻译： 形成贯穿硅通孔（TSV）结构的方法包括在衬底上形成互连焊盘。 在互连焊盘上形成下层。 至少部分地穿过衬底形成垂直导电柱。 至少部分地通过底层形成至少一个虚拟结构。 顶部衬垫形成在虚拟结构和垂直导电柱上。 顶部焊盘覆盖比垂直导电柱的横截面更宽的区域。 互连焊盘电连接到顶部焊盘。 虚拟结构连接顶部焊盘和下层，从而紧固顶部焊盘和互连焊盘。

    Through-substrate via for semiconductor device
    30.
    发明授权
    Through-substrate via for semiconductor device 有权
    用于半导体器件的通孔基板通孔

    公开(公告)号：US07973413B2

    公开(公告)日：2011-07-05

    申请号：US11844650

    申请日：2007-08-24

    申请人： Chen-Cheng Kuo ,  Chen Chen-Shien ,  Kai-Ming Ching ,  Chih-Hua Chen

    发明人： Chen-Cheng Kuo ,  Chen Chen-Shien ,  Kai-Ming Ching ,  Chih-Hua Chen

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device including a substrate having a front surface and a back surface is provided. A plurality of interconnect layers are formed on the front surface and have a first surface opposite the front surface of the substrate. A tapered profile via extends from the first surface of the plurality of interconnect layers to the back surface of the substrate. In one embodiment, a insulating layer is formed on the substrate and includes an opening, and wherein the opening includes conductive material providing contact to the tapered profile via.

    摘要翻译： 提供了包括具有前表面和后表面的基板的半导体器件。 多个互连层形成在前表面上并具有与基板的前表面相对的第一表面。 锥形轮廓通孔从多个互连层的第一表面延伸到基底的后表面。 在一个实施例中，在衬底上形成绝缘层并且包括开口，并且其中开口包括提供与锥形轮廓通孔接触的导电材料。