公开(公告)号：US09373573B2

公开(公告)日：2016-06-21

申请号：US14305185

申请日：2014-06-16

Applicant: STATS ChipPAC, Ltd.

Inventor： Rajendra D. Pendse ,  KyungOe Kim ,  TaeWoo Kang

IPC: H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/49811 ,  H01L21/563 ,  H01L21/76885 ,  H01L23/49838 ,  H01L23/522 ,  H01L24/16 ,  H01L24/28 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/8121 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A flip chip interconnect has a tapering interconnect structure, and the area of contact of the interconnect structure with the site on the substrate metallization is less than the area of contact of the interconnect structure with the die pad. Also, a bond-on-lead or bond-on-narrow pad or bond on a small area of a contact pad interconnection includes such tapering flip chip interconnects. Also, methods for making the interconnect structure include providing a die having interconnect pads, providing a substrate having interconnect sites on a patterned conductive layer, providing a bump on a die pad, providing a fusible electrically conductive material either at the interconnect site or on the bump, mating the bump to the interconnect site, and heating to melt the fusible material.

公开(公告)号：US20140319692A1

公开(公告)日：2014-10-30

申请号：US14329162

申请日：2014-07-11

Applicant: STATS ChipPAC, Ltd.

Inventor： Rajendra D. Pendse

IPC: H01L23/00

CPC classification number: H01L24/17 ,  H01L21/563 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05557 ,  H01L2224/0901 ,  H01L2224/1134 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/17104 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81136 ,  H01L2224/81204 ,  H01L2224/8121 ,  H01L2224/81211 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H05K1/111 ,  H05K3/3452 ,  H05K2201/09427 ,  H05K2201/09727 ,  H05K2201/0989 ,  H05K2201/10674 ,  Y02P70/611 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over contact pads on a surface of the semiconductor die. The bumps can have a fusible portion and non-fusible portion. A plurality of conductive traces is formed over a substrate with interconnect sites having a width greater than 20% and less than 80% of a width of a contact interface between the bumps and contact pads. The bumps are bonded to the interconnect sites so that the bumps cover a top surface and side surface of the interconnect sites. An encapsulant is deposited around the bumps between the semiconductor die and substrate. The conductive traces have a pitch as determined by minimum spacing between adjacent conductive traces that can be placed on the substrate and the width of the interconnect site provides a routing density equal to the pitch of the conductive traces.

Abstract translation: 半导体器件具有在半导体管芯的表面上的接触焊盘上形成有多个凸点的半导体管芯。 凸块可以具有可熔部分和非易熔部分。 在衬底上形成多个导电迹线，其互连位置的宽度大于凸块和接触焊盘之间的接触界面的20％且小于80％的宽度。 这些凸块被结合到互连部位，使得凸块覆盖互连部位的顶表面和侧表面。 围绕半导体管芯和衬底之间的凸块沉积密封剂。 导电迹线具有通过可以放置在衬底上的相邻导电迹线之间的最小间隔确定的间距，并且互连部位的宽度提供等于导电迹线的间距的布线密度。

公开(公告)号：US08741766B2

公开(公告)日：2014-06-03

申请号：US13905845

申请日：2013-05-30

Applicant: STATS ChipPAC, Ltd.

Inventor： Rajendra D. Pendse

IPC: H01L23/48

CPC classification number: H01L24/14 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/488 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/4823 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/09909 ,  H05K2201/10674 ,  Y02P70/613 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor device has a semiconductor die with die bump pads and substrate with trace lines having integrated bump pads. A solder mask patch is formed interstitially between the die bump pads or integrated bump pads. The solder mask patch contains non-wettable material. Conductive bump material is deposited over the integrated bump pads or die bump pads. The semiconductor die is mounted over the substrate so that the conductive bump material is disposed between the die bump pads and integrated bump pads. The bump material is reflowed without a solder mask around the integrated bump pads to form an interconnect between the semiconductor die and substrate. The solder mask patch confines the conductive bump material within a footprint of the die bump pads or integrated bump pads during reflow. The interconnect can have a non-fusible base and fusible cap.

Abstract translation: 半导体器件具有具有管芯凸块焊盘的半导体管芯和具有集成凸块焊盘的迹线的衬底。 在芯片凸块焊盘或集成凸块焊盘之间间隙地形成焊接掩模贴片。 焊接掩模贴片包含不可润湿的材料。 导电凸块材料沉积在集成的凸块焊盘或模具凸块焊盘上。 半导体管芯安装在衬底上，使得导电凸块材料设置在管芯凸块焊盘和集成凸块焊盘之间。 凸块材料在集成的凸块焊盘周围没有焊接掩模的情况下回流以形成半导体管芯和衬底之间的互连。 焊接掩模贴片将导电凸块材料限制在回流焊中芯片凸块焊盘或集成凸块焊盘的占位面积内。 互连可以具有不可熔的基底和易熔盖。

公开(公告)号：US20140145340A1

公开(公告)日：2014-05-29

申请号：US14170295

申请日：2014-01-31

Applicant: STATS ChipPAC, Ltd.

Inventor： Rajendra D. Pendse

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/522 ,  H01L21/76838 ,  H01L23/53228 ,  H01L23/53242 ,  H01L24/16 ,  H01L24/83 ,  H01L24/90 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1411 ,  H01L2224/1601 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/17107 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81345 ,  H01L2224/81385 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/325 ,  Y10T428/24917 ,  H01L2924/00 ,  H01L2924/3512

Abstract: A flip chip interconnection structure is formed by mechanically interlocking joining surfaces of a first and second element. The first element, which may be a bump on an integrated circuit chip, includes a soft, deformable material with a low yield strength and high elongation to failure. The surface of the second element, which may for example be a substrate pad, is provided with asperities into which the first element deforms plastically under pressure to form the mechanical interlock.

Abstract translation: 通过机械地互锁第一和第二元件的接合表面来形成倒装芯片互连结构。 可以是集成电路芯片上的凸起的第一元件包括具有低屈服强度和高伸长率的软的可变形的材料。 第二元件的表面（其可以例如是衬底）具有凹凸，第一元件在压力下塑性变形，以形成机械互锁。

公开(公告)号：US20130264704A1

公开(公告)日：2013-10-10

申请号：US13905845

申请日：2013-05-30

Applicant: Stats ChipPAC, Ltd

Inventor： Rajendra D. Pendse

IPC: H01L23/498 ,  H01L23/00

CPC classification number: H01L24/14 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/488 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/4823 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15174 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/09909 ,  H05K2201/10674 ,  Y02P70/613 ,  H01L2924/0105 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor device has a semiconductor die with die bump pads and substrate with trace lines having integrated bump pads. A solder mask patch is formed interstitially between the die bump pads or integrated bump pads. The solder mask patch contains non-wettable material. Conductive bump material is deposited over the integrated bump pads or die bump pads. The semiconductor die is mounted over the substrate so that the conductive bump material is disposed between the die bump pads and integrated bump pads. The bump material is reflowed without a solder mask around the integrated bump pads to form an interconnect between the semiconductor die and substrate. The solder mask patch confines the conductive bump material within a footprint of the die bump pads or integrated bump pads during reflow. The interconnect can have a non-fusible base and fusible cap.

Abstract translation: 半导体器件具有具有管芯凸块焊盘的半导体管芯和具有集成凸块焊盘的迹线的衬底。 在芯片凸块焊盘或集成凸块焊盘之间间隙地形成焊接掩模贴片。 焊接掩模贴片包含不可润湿的材料。 导电凸块材料沉积在集成的凸块焊盘或模具凸块焊盘上。 半导体管芯安装在衬底上，使得导电凸块材料设置在管芯凸块焊盘和集成凸块焊盘之间。 凸块材料在集成的凸块焊盘周围没有焊接掩模的情况下回流以形成半导体管芯和衬底之间的互连。 焊接掩模贴片将导电凸块材料限制在回流焊中芯片凸块焊盘或集成凸块焊盘的占位面积内。 互连可以具有不可熔的基底和易熔盖。

公开(公告)号：US20130214409A1

公开(公告)日：2013-08-22

申请号：US13845542

申请日：2013-03-18

Applicant: STATS CHIPPAC, LTD.

Inventor： Reza A. Pagaila ,  Rajendra D. Pendse ,  Jun Mo Koo

IPC: H01L23/28

CPC classification number: H01L23/28 ,  H01L21/563 ,  H01L21/568 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/18 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155

Abstract: A semiconductor die has a conductive layer including a plurality of trace lines formed over a carrier. The conductive layer includes a plurality of contact pads electrically continuous with the trace lines. A semiconductor die has a plurality of contact pads and bumps formed over the contact pads. A plurality of conductive pillars can be formed over the contact pads of the semiconductor die. The bumps are formed over the conductive pillars. The semiconductor die is mounted to the conductive layer with the bumps directly bonded to an end portion of the trace lines to provide a fine pitch interconnect. An encapsulant is deposited over the semiconductor die and conductive layer. The conductive layer contains wettable material to reduce die shifting during encapsulation. The carrier is removed. An interconnect structure is formed over the encapsulant and semiconductor die. An insulating layer can be formed over the conductive layer.

Abstract translation: 半导体管芯具有包括形成在载体上的多条迹线的导电层。 导电层包括与迹线相连接的多个接触垫。 半导体管芯具有形成在接触焊盘上的多个接触焊盘和凸块。 可以在半导体管芯的接触焊盘上形成多个导电柱。 凸块形成在导电柱上。 将半导体管芯安装到导电层上，凸块直接接合到迹线的端部，以提供细间距互连。 密封剂沉积在半导体管芯和导电层上。 导电层包含可湿性材料，以减少封装期间的模具移动。 载体被移除。 在密封剂和半导体管芯上形成互连结构。 可以在导电层上形成绝缘层。

公开(公告)号：US20130026628A1

公开(公告)日：2013-01-31

申请号：US13645397

申请日：2012-10-04

Applicant: STATS CHIPPAC, LTD.

Inventor： Rajendra D. Pendse

IPC: H01L21/60 ,  H01L23/498

CPC classification number: H01L23/49838 ,  H01L21/563 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13013 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/1607 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81204 ,  H01L2224/8121 ,  H01L2224/81211 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H05K1/111 ,  H05K3/3452 ,  H05K2201/09427 ,  H05K2201/09727 ,  H05K2201/0989 ,  H05K2201/10674 ,  Y02P70/611 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A flip chip interconnect of a die on a substrate is made by mating the interconnect bump onto a narrow interconnect pad on a lead or trace, rather than onto a capture pad. The width of the narrow interconnect pad is less than a base diameter of bumps on the die to be attached. Also, a flip chip package includes a die having solder bumps attached to interconnect pads in an active surface, and a substrate having narrow interconnect pads on electrically conductive traces in a die attach surface, in which the bumps are mated onto the narrow pads on the traces.

Abstract translation: 通过将互连凸块配合到引线或迹线上的窄互连焊盘而不是捕获板上，来制造衬底上的管芯的倒装芯片互连。 窄互连焊盘的宽度小于要连接的裸片上的凸块的基底直径。 此外，倒装芯片封装包括具有附着到有源表面中的互连焊盘的焊料凸块的芯片，以及在芯片附着表面中的导电迹线上具有窄互连焊盘的衬底，其中凸块配合到 痕迹

公开(公告)号：US09881894B2

公开(公告)日：2018-01-30

申请号：US13771825

申请日：2013-02-20

Applicant: STATS ChipPAC, Ltd.

Inventor： Rajendra D. Pendse

IPC: H01L23/00 ,  H01L23/498 ,  H01L21/56 ,  H01L25/03 ,  H01L25/065 ,  H01L25/00 ,  H01L21/768

CPC classification number: H01L24/81 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76898 ,  H01L23/49811 ,  H01L23/49822 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/0603 ,  H01L2224/11 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/14135 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/81 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81805 ,  H01L2224/83 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00012

Abstract: A semiconductor device has a plurality of first semiconductor die with an encapsulant deposited over a first surface of the first semiconductor die and around the first semiconductor die. An insulating layer is formed over the encapsulant and over a second surface of the first semiconductor die opposite the first surface. The insulating layer includes openings over the first semiconductor die. A first conductive layer is formed over the first semiconductor die within the openings. A second conductive layer is formed over the first conductive layer to form vertical conductive vias. A second semiconductor die is disposed over the first semiconductor die and electrically connected to the first conductive layer. A bump is formed over the second conductive layer outside a footprint of the first semiconductor die. The second semiconductor die is disposed over an active surface or a back surface of the first semiconductor die.

公开(公告)号：US09472533B2

公开(公告)日：2016-10-18

申请号：US14548064

申请日：2014-11-19

Applicant: STATS ChipPAC, Ltd.

Inventor： Rajendra D. Pendse

IPC: H01L21/00 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3128 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06548 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/15192 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85

Abstract: A semiconductor device has a first semiconductor die and a first encapsulant deposited over the first semiconductor die. An interconnect structure is formed over the first semiconductor die and first encapsulant. A modular interconnect structure including a conductive via is disposed adjacent to the first semiconductor die. The first encapsulant is deposited over the modular interconnect structure. An opening is formed in the first encapsulant extending to the modular interconnect structure or to the interconnect structure. A second semiconductor die is disposed over the first semiconductor die. A bond wire is formed over the second semiconductor die and extends into the opening in the first encapsulant. A cap is formed over an active region of the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and bond wire. Alternatively, a lid is formed over the second semiconductor die and bond wire.

Abstract translation: 半导体器件具有沉积在第一半导体管芯上的第一半导体管芯和第一密封剂。 在第一半导体管芯和第一密封剂上形成互连结构。 包括导电通孔的模块化互连结构设置成与第一半导体管芯相邻。 第一密封剂沉积在模块化互连结构上。 在延伸到模块化互连结构或互连结构的第一密封剂中形成开口。 第二半导体管芯设置在第一半导体管芯上。 接合线形成在第二半导体管芯上并延伸到第一密封剂中的开口中。 帽形成在第二半导体管芯的有源区上。 第二密封剂沉积在第二半导体管芯和接合线上。 或者，在第二半导体管芯和接合线上形成盖。

公开(公告)号：US09159665B2

公开(公告)日：2015-10-13

申请号：US13645397

申请日：2012-10-04

Applicant: STATS ChipPAC, Ltd.

Inventor： Rajendra D. Pendse

IPC: H01L21/60 ,  H01L23/488 ,  H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H05K1/11 ,  H05K3/34

CPC classification number: H01L23/49838 ,  H01L21/563 ,  H01L23/49811 ,  H01L24/29 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13013 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/1607 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81204 ,  H01L2224/8121 ,  H01L2224/81211 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2224/92125 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  H05K1/111 ,  H05K3/3452 ,  H05K2201/09427 ,  H05K2201/09727 ,  H05K2201/0989 ,  H05K2201/10674 ,  Y02P70/611 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A flip chip interconnect of a die on a substrate is made by mating the interconnect bump onto a narrow interconnect pad on a lead or trace, rather than onto a capture pad. The width of the narrow interconnect pad is less than a base diameter of bumps on the die to be attached. Also, a flip chip package includes a die having solder bumps attached to interconnect pads in an active surface, and a substrate having narrow interconnect pads on electrically conductive traces in a die attach surface, in which the bumps are mated onto the narrow pads on the traces.

Abstract translation: 通过将互连凸块配合到引线或迹线上的窄互连焊盘而不是捕获板上，来制造衬底上的管芯的倒装芯片互连。 窄互连焊盘的宽度小于要连接的裸片上的凸块的基底直径。 此外，倒装芯片封装包括具有附着到有源表面中的互连焊盘的焊料凸块的芯片，以及在芯片附着表面中的导电迹线上具有窄互连焊盘的衬底，其中凸块配合到 痕迹