公开(公告)号：US09893236B2

公开(公告)日：2018-02-13

申请号：US14921734

申请日：2015-10-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael D. Craven ,  Steven P. DenBaars

IPC: H01L33/00 ,  H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/10 ,  C30B25/18 ,  C30B29/40 ,  C30B29/60 ,  H01L21/02 ,  H01L29/15 ,  H01L33/06 ,  H01L33/32 ,  H01L29/20

CPC classification number: H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

公开(公告)号：US09773704B2

公开(公告)日：2017-09-26

申请号：US15189356

申请日：2016-06-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/78 ,  H01L29/20 ,  H01L21/02 ,  H01L21/3063 ,  H01S5/02 ,  H01S5/183 ,  H01S5/343 ,  B82Y20/00 ,  H01L21/306 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/00 ,  H01L33/32 ,  H01S5/187 ,  H01S5/20

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US20160307801A1

公开(公告)日：2016-10-20

申请号：US15189356

申请日：2016-06-22

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/78 ,  H01L31/0304 ,  H01L33/32 ,  H01L21/02 ,  H01S5/187 ,  H01L33/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/343 ,  H01L29/20 ,  H01L31/18

CPC classification number: H01L21/7813 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/30612 ,  H01L21/30635 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/32 ,  H01S5/0217 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18347 ,  H01S5/187 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates.

公开(公告)号：US20160133790A1

公开(公告)日：2016-05-12

申请号：US14757937

申请日：2015-12-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Natalie Fellows DeMille ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/22 ,  H01L33/14 ,  H01L33/62 ,  H01L33/50 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

公开(公告)号：US20160043278A1

公开(公告)日：2016-02-11

申请号：US14921734

申请日：2015-10-23

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Michael D. Craven ,  Steven P. DenBaars

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

Abstract translation: 制造非极性a面GaN /（Al，B，In，Ga）N多量子阱（MQW）的方法。 a面MQW通过金属有机化学气相沉积（MOCVD）在适当的GaN /蓝宝石模板层上生长，阱宽度范围为20埃至70埃。 来自a-plane MQWs的室温光致发光（PL）发射能量遵循使用自适应泊松 - 薛定er（SCPS）计算建模的平方井趋势。 对于a面MQW，在52的量子阱宽度处获得最佳PL发射强度。

公开(公告)号：US09240529B2

公开(公告)日：2016-01-19

申请号：US14483501

申请日：2014-09-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Natalie Fellows DeMille ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/22 ,  H01L33/44 ,  H01L33/58 ,  H01L33/32 ,  H01L33/62

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

Abstract translation: 本发明涉及用于光电应用的LED灯提取。 更具体地，本发明涉及与用于高效（Al，Ga，In）N的发光二极管应用的优化的光学器件和磷光体层组合的（Al，Ga，In）及其制造方法。 进一步的扩展是与成形光学元件组合的成形高折射率光提取材料的一般组合。

公开(公告)号：US20150372456A1

公开(公告)日：2015-12-24

申请号：US14766924

申请日：2014-02-13

Applicant: Arash POURHASHEMI ,  Robert M. FARRELL ,  Steven P. DENBAARS ,  James S. SPECK ,  Shuji NAKAMURA ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Arash Pourhashemi ,  Robert M. Farrell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/40 ,  H01S5/32 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01S5/0217 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/4025 ,  H01S2304/12

Abstract: A high power blue-violet Ill-nitride semi-polar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.

Abstract translation: 输出功率超过1 W，斜率效率大于1 W / A，外部量子效率（EQE）超过25的高功率蓝紫色III族氮化物半极性激光二极管（LD） ％，更优选超过35％。 这些工作特性使这些激光二极管适用于固态照明系统。

公开(公告)号：US20150255959A1

公开(公告)日：2015-09-10

申请号：US14721729

申请日：2015-05-26

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Po Shan Hsu ,  Kathryn M. Kelchner ,  Robert M. Farrell ,  Daniel A. Haeger ,  Hiroaki Ohta ,  Anurag Tyagi ,  Shuji Nakamura ,  Steven P. DenBaars ,  James S. Speck

IPC: H01S5/343 ,  H01L33/00 ,  H01L33/16 ,  H01S5/20 ,  H01L31/0735 ,  H01L31/036 ,  H01L31/0304 ,  H01S5/32 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3404 ,  H01S2304/04

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

Abstract translation: 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15

公开(公告)号：US09054498B2

公开(公告)日：2015-06-09

申请号：US14308445

申请日：2014-06-18

Applicant: The Regents of the University of California

Inventor： Daniel A. Cohen ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/00 ,  H01S5/30 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/343 ,  H01L33/32 ,  H01L21/02 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32

CPC classification number: H01S5/3013 ,  B82Y20/00 ,  H01L21/02631 ,  H01L33/32 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/2009 ,  H01S5/2054 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.

Abstract translation: 一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯， 温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。

公开(公告)号：US20150014732A1

公开(公告)日：2015-01-15

申请号：US14483501

申请日：2014-09-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Natalie Fellows DeMille ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

Abstract translation: 本发明涉及用于光电应用的LED灯提取。 更具体地，本发明涉及与用于高效（Al，Ga，In）N的发光二极管应用的优化的光学器件和磷光体层组合的（Al，Ga，In）及其制造方法。 进一步的扩展是与成形光学元件组合的成形高折射率光提取材料的一般组合。