公开(公告)号：US20100171217A1

公开(公告)日：2010-07-08

申请号：US12725724

申请日：2010-03-17

Applicant: Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

Inventor： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC: H01L23/498

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US20080111213A1

公开(公告)日：2008-05-15

申请号：US11924781

申请日：2007-10-26

Applicant: Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

Inventor： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC: H01L23/488

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US07300857B2

公开(公告)日：2007-11-27

申请号：US10932296

申请日：2004-09-02

Applicant: Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

Inventor： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC: H01L21/441

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract translation: 公开了一种用于成像器，存储器和其他集成电路应用的透晶片互连，从而消除了对引线接合的需要，使得结合这种互连的器件可堆叠并且实现成像器件的晶片级封装。 此外，实现了更小且更可靠的管芯封装，并且由于信号路径长度的减小，电路寄生（例如，L和R）被减小。

公开(公告)号：US20060270108A1

公开(公告)日：2006-11-30

申请号：US11497699

申请日：2006-08-02

Applicant: Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

Inventor： Warren Farnworth ,  Alan Wood ,  William Hiatt ,  James Wark ,  David Hembree ,  Kyle Kirby ,  Pete Benson

IPC: H01L21/00

CPC classification number: H01L21/561 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05559 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/351 ,  H01L2924/207 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

Abstract: A method for fabricating a semiconductor component includes the steps of providing a substrate having a contact on a circuit side thereof, forming an opening from a backside of the substrate to the contact, forming a conductive via in the opening in electrical contact with a surface of the contact, and forming a second contact on the back side in electrical communication with the conductive via. The method can also include the steps of thinning the substrate from the backside, forming insulating layers on the circuit side and the backside, and forming a conductor and terminal contact on the circuit side in electrical communication with the conductive via. A semiconductor component includes the contact on the circuit side, the conductive via in electrical contact with the contact, and the second contact on the backside in electrical communication with the conductive via. The semiconductor component can also include the insulating layers, the conductor and the terminal contact.

Abstract translation: 一种制造半导体部件的方法包括以下步骤：提供在其电路侧具有接触的基板，从基板的背面形成开口到触点，在开口中形成导电通孔，该导电通孔与 接触，并且在背面形成与导电通孔电连通的第二接触。 该方法还可以包括从背面减薄衬底的步骤，在电路侧和背面形成绝缘层，以及在电路侧上形成与导电通孔电连通的导体和端子触点。 半导体部件包括电路侧的触点，与触点电接触的导电通孔以及与导电通路电气连通的背侧的第二触点。 半导体部件还可以包括绝缘层，导体和端子触头。

公开(公告)号：US20060255418A1

公开(公告)日：2006-11-16

申请号：US11409058

申请日：2006-04-24

Applicant: Charles Watkins ,  David Hembree ,  Peter Benson ,  Salman Akram

Inventor： Charles Watkins ,  David Hembree ,  Peter Benson ,  Salman Akram

IPC: H01L31/0232 ,  H01L31/0203

CPC classification number: H01L27/14625 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Microelectronic imaging devices and methods of packaging microelectronic imaging devices are disclosed herein. In one embodiment, a microelectronic imaging device includes a microelectronic die having an integrated circuit, an image sensor electrically coupled to the integrated circuit, and a plurality of bond-pads electrically coupled to the integrated circuit. The imaging device further includes a cover over the image sensor and a plurality of interconnects in and/or on the cover that are electrically coupled to corresponding bond-pads of the die. The interconnects provide external electrical contacts for the bond-pads of the die. The interconnects can extend through the cover or along a surface of the cover.

Abstract translation: 本文公开了微电子成像装置和包装微电子成像装置的方法。 在一个实施例中，微电子成像装置包括具有集成电路的微电子管芯，电耦合到集成电路的图像传感器，以及电耦合到集成电路的多个接合焊盘。 所述成像装置还包括覆盖在所述图像传感器上的盖和在所述盖中和/或盖上的多个互连件，其电耦合到所述管芯的相应接合焊盘。 互连件为模具的焊盘提供外部电触头。 互连可以延伸穿过盖或沿着盖的表面。

公开(公告)号：US20060228825A1

公开(公告)日：2006-10-12

申请号：US11102408

申请日：2005-04-08

Applicant: David Hembree

Inventor： David Hembree

IPC: H01L21/00

CPC classification number: H01L25/0657 ,  B23K20/004 ,  B23K20/005 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/48455 ,  H01L2224/48471 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48992 ,  H01L2224/78301 ,  H01L2224/8121 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/85043 ,  H01L2224/85045 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2224/9202 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30105 ,  H01L2924/3025 ,  H05K3/4046 ,  H05K2201/10287 ,  H05K2203/049 ,  Y10T29/49117 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49162 ,  Y10T29/49169 ,  Y10T29/53213 ,  H01L2924/20752 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact. The semiconductor component can be used to form chip scale components, wafer scale components, stacked components, or interconnect components for electrically engaging or testing other semiconductor components.

Abstract translation: 用于通过导线互连制造半导体部件的方法包括提供具有电路侧，背面和通孔的基板的步骤。 该方法还包括以下步骤：将导线穿过通孔，在背面的导线上形成接触，在电路侧的导线上形成接合接触，然后将线从接合接触件断开。 通线互连包括通孔中的导线，背侧的触点和电路侧的接合触点。 背面的触点和电路侧的接合触点允许多个部件与相邻部件之间的电连接层叠。 用于执行该方法的系统包括具有通孔的基板和具有接合毛细管的引线接合器，所述接合毛细管被配置为使线穿过通孔，并形成接触和接合接触。 半导体部件可用于形成用于电接合或测试其它半导体部件的芯片级部件，晶片级部件，堆叠部件或互连部件。

公开(公告)号：US20060186317A1

公开(公告)日：2006-08-24

申请号：US11404831

申请日：2006-04-17

Applicant: Warren Farnworth ,  Sidney Rigg ,  David Hembree ,  William Hiatt

Inventor： Warren Farnworth ,  Sidney Rigg ,  David Hembree ,  William Hiatt

IPC: H01L27/00

CPC classification number: H01L31/0203 ,  B33Y80/00 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/148 ,  H01L2224/48227 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Microelectronic imagers with prefabricated housings and methods of packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imager can include a microelectronic die, an image sensor, and an integrated circuit operatively coupled to the integrated circuit. The microelectronic imager also includes an optic unit having an optic member. The microelectronic imager further includes a prefabricated housing having a first mounting site and a second mounting site. The die is seated within the housing at the first mounting site and the optics unit is seated within the housing at the second mounting site in a fixed, preset position in which the optic member is situated at a desired location relative to the image sensor.

Abstract translation: 具有预制外壳的微电子成像器和封装微电子成像器的方法在此公开。 在一个实施例中，微电子成像器可以包括微电子管芯，图像传感器和可操作地耦合到集成电路的集成电路。 微电子成像器还包括具有光学构件的光学单元。 微电子成像器还包括具有第一安装位置和第二安装位置的预制外壳。 模具位于第一安装位置的壳体内，并且光学单元在第二安装位置处位于壳体内的固定的预设位置中，光学构件位于相对于图像传感器的期望位置处。

公开(公告)号：US20060115932A1

公开(公告)日：2006-06-01

申请号：US11332929

申请日：2006-01-17

Applicant: Warren Farnworth ,  Alan Wood ,  David Hembree

Inventor： Warren Farnworth ,  Alan Wood ,  David Hembree

IPC: H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC classification number: H01L21/486 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/81801 ,  H01L2224/82039 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/1005 ,  H01L2225/1058 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H05K1/0306 ,  H05K1/112 ,  H05K3/0029 ,  H05K3/0032 ,  H05K2201/09472 ,  H05K2201/0959 ,  H05K2201/09827 ,  H05K2201/09845 ,  H05K2201/10674 ,  H05K2201/10734 ,  H01L2924/00

Abstract: A method for fabricating semiconductor components and interconnects includes the steps of providing a substrate, such as a semiconductor die, forming external contacts on opposing sides of the substrate by laser drilling vias through the substrate, and forming conductive members in the vias. The conductive members include enlarged terminal portions that are covered with a non-oxidizing metal. The method can be used to fabricate stackable semiconductor packages having integrated circuits in electrical communication with the external contacts. The method can also be used to fabricate interconnects for electrically engaging packages, dice and wafers for testing or for constructing electronic assemblies.

Abstract translation: 一种用于制造半导体部件和互连的方法包括以下步骤：提供诸如半导体管芯的衬底，通过穿过衬底的激光钻孔通孔在衬底的相对侧上形成外部触点，以及在通孔中形成导电构件。 导电构件包括被非氧化金属覆盖的扩大端子部分。 该方法可用于制造具有与外部触点电连通的集成电路的可堆叠半导体封装。 该方法还可用于制造用于电接合封装，裸片和晶片用于测试或构建电子组件的互连。

公开(公告)号：US20060043599A1

公开(公告)日：2006-03-02

申请号：US10932296

申请日：2004-09-02

Applicant: Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

Inventor： Salman Akram ,  Charles Watkins ,  Mark Hiatt ,  David Hembree ,  James Wark ,  Warren Farnworth ,  Mark Tuttle ,  Sidney Rigg ,  Steven Oliver ,  Kyle Kirby ,  Alan Wood ,  Lu Velicky

IPC: H01L21/44 ,  H01L23/48

CPC classification number: H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/45 ,  H01L27/14634 ,  H01L27/14636 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

公开(公告)号：US20060003549A1

公开(公告)日：2006-01-05

申请号：US11216866

申请日：2005-08-31

Applicant: Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

Inventor： Alan Wood ,  Warren Farnworth ,  David Hembree ,  Sidney Rigg ,  William Hiatt ,  Peter Benson ,  Kyle Kirby ,  Salman Akram

IPC: H01L21/30

CPC classification number: G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

Abstract: A fabrication substrate for use in fabricating integrated circuits and other electronic devices includes a substrate that comprises semiconductor material, as well as a support structure on an active surface of the substrate. The support structure is located at or adjacent to an entire outer peripheral edge of the substrate. The support structure may be configured as a ring-like element or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.

Abstract translation: 用于制造集成电路和其它电子器件的制造衬底包括：衬底，其包含半导体材料，以及在衬底的有源表面上的支撑结构。 支撑结构位于或邻近基板的整个外周边缘。 支撑结构可以被构造为环状元件或者作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。