公开(公告)号：US11961800B2

公开(公告)日：2024-04-16

申请号：US17814152

申请日：2022-07-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  An-Jhih Su ,  Chi-Hsi Wu ,  Wen-Chih Chiou ,  Tsang-Jiuh Wu ,  Der-Chyang Yeh ,  Ming Shih Yeh

IPC分类号： H01L23/522 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/00 ,  H01L23/528 ,  H01L23/538 ,  H01L25/07 ,  H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01L21/321 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L23/5226 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/5384 ,  H01L24/05 ,  H01L24/11 ,  H01L24/89 ,  H01L25/072 ,  H01L25/0753 ,  H01L33/0093 ,  H01L33/38 ,  H01L33/62 ,  H01L21/3212 ,  H01L24/81 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03622 ,  H01L2224/08225 ,  H01L2224/08501 ,  H01L2224/80006 ,  H01L2224/80815 ,  H01L2224/80895 ,  H01L2224/81005 ,  H01L2224/81815 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0066

摘要： A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.

公开(公告)号：US11955580B2

公开(公告)日：2024-04-09

申请号：US16954465

申请日：2018-12-29

申请人： TCL TECHNOLOGY GROUP CORPORATION

发明人： Chaoyu Xiang ,  Xiongzhi Wang ,  Le Li ,  Tao Zhang ,  Zhenghang Xin ,  Xue Li

IPC分类号： H01L33/06 ,  H01L33/14

CPC分类号： H01L33/06 ,  H01L33/14

摘要： A quantum dot Light Emitting Diode, including an anode, a cathode, and a quantum dot light-emitting layer between the anode and the cathode, a carrier functional layer is arranged between the anode and the cathode. The carrier functional layer contains a magnetic material.

公开(公告)号：US20240113092A1

公开(公告)日：2024-04-04

申请号：US18483406

申请日：2023-10-09

申请人： NANOSYS, INC.

发明人： Willibrordus Gerardus Maria VAN DEN HOEK ,  Tsun Yin LAU ,  Cameron DANESH ,  Fariba DANESH

IPC分类号： H01L25/16 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/56 ,  H01L33/62

CPC分类号： H01L25/167 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L33/405 ,  H01L33/56 ,  H01L33/62 ,  H01L2933/005 ,  H01L2933/0066

摘要： A light emitting device includes a backplane, an array of light emitting diodes attached to a frontside of the backplane, a positive tone, imageable dielectric material layer, such as a positive photoresist layer, located on the frontside of the backplane and laterally surrounding the array of light emitting diodes, such that sidewalls of the light emitting diodes contacting the positive tone, imageable dielectric material layer have a respective reentrant vertical cross-sectional profile, and at least one common conductive layer located over the positive tone, imageable dielectric material layer and contacting the light emitting diodes.

公开(公告)号：US11949039B2

公开(公告)日：2024-04-02

申请号：US17290525

申请日：2019-11-04

申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： Boon S. Ooi ,  Aditya Prabaswara ,  Jung-Wook Min ,  Tien Khee Ng

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/007 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/32 ,  H01L2933/0016

摘要： A method of forming an optoelectronic semiconductor device involves providing an amorphous substrate. A transparent and conductive oxide layer is deposited on the amorphous substrate. The transparent and conductive oxide layer is annealed to form an annealed transparent and conductive oxide layer having a cubic-oriented and/or rhombohedral-oriented surface. A nanorod array is formed on the cubic-oriented and/or rhombohedral-oriented surface of the annealed transparent and conductive oxide layer. The annealing of the transparent conductive oxide layer and the formation of the nanorod array are performed using molecular beam epitaxy (MBE). The nanorods of the nanorod array comprise a group-III material and are non-polar.

公开(公告)号：US20240105882A1

公开(公告)日：2024-03-28

申请号：US18324994

申请日：2023-05-28

申请人： FUJIFILM Business Innovation Corp. ,  FUJIFILM Corporation

发明人： Takashi KONDO ,  Michiaki MURATA ,  Saori NISHIZAKI ,  Takafumi HIGUCHI

IPC分类号： H01L33/46 ,  H01L33/00 ,  H01L33/06

CPC分类号： H01L33/465 ,  H01L33/0016 ,  H01L33/06

摘要： A semiconductor-laminated substrate includes: a substrate; and a laminated structure that includes a first semiconductor laminate which is provided on the substrate and processed into a light emitting element and a second semiconductor laminate which is provided on the first semiconductor laminate and processed into at least one thyristor, in which the laminated structure is adjusted such that two resonant wavelengths due to an effect of the thyristor are located on both sides of a resonant wavelength of the light emitting element.

公开(公告)号：US20240101897A1

公开(公告)日：2024-03-28

申请号：US18121757

申请日：2023-03-15

申请人： Nanosys, Inc.

发明人： Daekyoung KIM ,  Wenzhou GUO ,  Alexander TU ,  Yeewah Annie CHOW ,  Diego BARRERA ,  Christian IPPEN ,  Benjamin NEWMEYER ,  Ruiqing MA

IPC分类号： C09K11/70 ,  C09K11/88 ,  H01L29/06 ,  H01L33/06 ,  H01L33/50

CPC分类号： C09K11/703 ,  C09K11/883 ,  H01L29/0665 ,  H01L33/06 ,  H01L33/502

摘要： The invention is in the field of nanostructure synthesis. Provided are highly luminescent core/shell nanostructures with zinc fluoride and zinc acetate bound to their surface. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.

公开(公告)号：US11927838B2

公开(公告)日：2024-03-12

申请号：US18220364

申请日：2023-07-11

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Gon Kim ,  Garam Park ,  Jooyeon Ahn ,  Shang Hyeun Park ,  Shin Ae Jun

IPC分类号： C09K11/70 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/08 ,  C09K11/62 ,  C09K11/88 ,  G02F1/017 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115

CPC分类号： G02F1/01716 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/025 ,  C09K11/0811 ,  C09K11/0883 ,  C09K11/62 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115 ,  G02F1/01791

摘要： A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

公开(公告)号：US11927534B2

公开(公告)日：2024-03-12

申请号：US16633358

申请日：2019-07-18

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Xianqin Meng ,  Xue Dong ,  Wei Wang ,  Jifeng Tan ,  Xiandong Meng ,  Xiaochuan Chen ,  Jian Gao ,  Pengxia Liang ,  Fangzhou Wang

IPC分类号： G01N21/64 ,  H01L27/15 ,  H01L31/12 ,  H01L33/06 ,  H01L33/50

CPC分类号： G01N21/6456 ,  G01N21/6404 ,  H01L27/156 ,  H01L31/12 ,  H01L33/06 ,  H01L33/502 ,  H01L2933/0041

摘要： A spectrometer and a fabrication method thereof. The spectrometer includes: a first base substrate; a second base substrate opposite to the first base substrate; a detection channel between the first base substrate and the second base substrate; a quantum dot light emitting layer on a side of the first base substrate that is close to the second base substrate, and including a plurality of quantum dot light emitting units; a black matrix on the side of the first base substrate that is close to the second base substrate, and configured to separate the plurality of quantum dot light emitting units; and a sensor layer, including a plurality of sensors, the plurality of sensors being in one-to-one correspondence with the plurality of quantum dot light emitting units.

公开(公告)号：US20240076546A1

公开(公告)日：2024-03-07

申请号：US18384521

申请日：2023-10-27

申请人： TECTUS CORPORATION

发明人： Lianhua QU ,  Hunaid NULWALA

IPC分类号： C09K11/88 ,  C09K11/00 ,  C09K11/02 ,  C09K11/62 ,  C09K11/64 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24

CPC分类号： C09K11/883 ,  C09K11/00 ,  C09K11/025 ,  C09K11/623 ,  C09K11/642 ,  H01L33/00 ,  H01L33/06 ,  H01L33/24 ,  H01L33/502

摘要： Quantum dots that are cadmium-free and/or stoichiometrically tuned are disclosed, as are methods of making them. Inclusion of the quantum dots and others in a stabilizing polymer matrix is also disclosed. The polymers are chosen for their strong binding affinity to the outer layers of the quantum dots such that the bond dissociation energy between the polymer material and the quantum dot is greater than the energy required to reach the melt temperature of the cross-linked polymer.

公开(公告)号：US20240072206A1

公开(公告)日：2024-02-29

申请号：US18500019

申请日：2023-11-01

申请人： Silanna UV Technologies Pte Ltd

发明人： Petar Atanackovic

IPC分类号： H01L33/26 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/50

CPC分类号： H01L33/26 ,  H01L21/2011 ,  H01L33/0012 ,  H01L33/005 ,  H01L33/06 ,  H01L33/12 ,  H01L33/18 ,  H01L33/504 ,  H01L33/002

摘要： In some embodiments, a composition of matter includes Li and F atoms within a single crystal Ga2O3 host including a monoclinic, orthorhombic, cubic, corundum, or hexagonal crystal symmetry, or within a single crystal LiGaO2 host including an orthorhombic or trigonal crystal symmetry. In some embodiments, a method includes sublimating a lithium fluoride (LiF) bulk crystal within a Knudsen cell to provide both Li and F and co-depositing the Li and F with an elemental Ga beam under an activated oxygen environment. The method can further include growing, on a growth surface of a substrate, an epitaxial layer including the Li, the F, the Ga, and the activated oxygen within an epitaxially formed Ga2O3 or LiGaO2 host.