公开(公告)号：US10230014B2

公开(公告)日：2019-03-12

申请号：US15342618

申请日：2016-11-03

申请人： International Business Machines Corporation

发明人： Liang-Yi Chang ,  Talia S. Gershon ,  Richard A. Haight ,  Yun Seog Lee

IPC分类号： B05D5/12 ,  H01L31/065 ,  H01L31/032 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/0224 ,  H01L21/02 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/0392

摘要： A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

公开(公告)号：US20190013430A1

公开(公告)日：2019-01-10

申请号：US16132059

申请日：2018-09-14

申请人： Solar Junction Corporation

发明人： Rebecca Elizabeth JONES-ALBERTUS ,  Pranob MISRA ,  Michael J. SHELDON ,  Homan B. YUEN ,  Ting LIU ,  Daniel DERKACS ,  Vijit SABNIS ,  Michael West WIEMER ,  Ferran SUAREZ

IPC分类号： H01L31/0735 ,  H01L31/0687 ,  H01L31/0304 ,  H01L31/0725 ,  H01L31/065 ,  H01L31/18

摘要： Compound semiconductor alloys comprising dilute nitride materials, are materials used in absorbing layers for photodetectors, power converters, solar cells, and in particular to high efficiency, electronic and optoelectronic devices, including multijunction solar cells, photodetectors, power converters, and the like, formed primarily of III-V semiconductor alloys. The absorbing (or active) layers achieve improved characteristics including band gap optimization and minimization of defects.

公开(公告)号：US10141466B2

公开(公告)日：2018-11-27

申请号：US14943390

申请日：2015-11-17

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hideo Ooiwa ,  Takenori Watabe ,  Hiroyuki Otsuka ,  Kazuo Hara

IPC分类号： H01L31/06 ,  H01L31/065 ,  H01L31/068 ,  H01L31/18 ,  H01L29/06 ,  H01L31/0352 ,  H01L29/04 ,  H01L31/0216 ,  H01L31/0224

摘要： Provided is a substrate for a solar cell, wherein a flat chamfered portion is formed on one corner of a silicon substrate having a square shape in a planar view, or a notch is formed on the corner or close to the corner. This invention makes it possible to easily check the position of the substrate and determine the direction of the substrate in a solar cell manufacturing step, and suppresses failures generated due to the direction of the substrate.

公开(公告)号：US09929297B2

公开(公告)日：2018-03-27

申请号：US14151478

申请日：2014-01-09

申请人： LG ELECTRONICS INC.

发明人： Eunhye Youn ,  Sangwook Park ,  Seunghwan Shim ,  Yujin Lee

IPC分类号： H01L31/065 ,  H01L31/068 ,  H01L31/0352 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/18

CPC分类号： H01L31/065 ,  H01L31/035272 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1824 ,  Y02E10/547

摘要： A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a front surface of the substrate and contains impurities of a second conductive type opposite the first conductive type, a back passivation layer which is positioned on a back surface of the substrate and has openings, a back surface field region containing impurities of the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region. The back surface field region includes a first back surface field region positioned on the back passivation layer and a second back surface field region, which is positioned at the back surface of the substrate exposed by the openings of the back passivation layer.

公开(公告)号：US09911888B2

公开(公告)日：2018-03-06

申请号：US14976798

申请日：2015-12-21

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tze-Chiang Chen ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L31/077 ,  C23C16/50 ,  H01L31/20 ,  H01L21/02 ,  C23C16/02 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  C23C16/455 ,  C23C16/515 ,  H01L31/0224 ,  H01L31/065 ,  H01L31/18 ,  H01L31/056

CPC分类号： H01L31/077 ,  C23C16/0272 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/50 ,  C23C16/515 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03682 ,  H01L31/03687 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/065 ,  H01L31/1816 ,  H01L31/20 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548

摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

公开(公告)号：US09871159B2

公开(公告)日：2018-01-16

申请号：US13639039

申请日：2011-04-27

申请人： Chul Hwan Choi

发明人： Chul Hwan Choi

IPC分类号： H01L31/00 ,  H01L31/065 ,  H01L31/0392 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/046 ,  H01L31/0465

CPC分类号： H01L31/065 ,  H01L31/022466 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

摘要： Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, a first window layer including a first oxide on the light absorbing layer, and a second window layer provided on the first window layer and including a second oxide having a composition ratio of oxygen higher than a composition ratio of oxygen contained in the first oxide.

公开(公告)号：US20170133542A1

公开(公告)日：2017-05-11

申请号：US15213594

申请日：2016-07-19

申请人： SolAero Technologies Corp.

发明人： Daniel Derkacs

IPC分类号： H01L31/0725 ,  H01L31/18 ,  H01L31/05 ,  H01L31/0735 ,  H01L31/065

CPC分类号： H01L31/0725 ,  H01L31/03046 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/065 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A multijunction solar cell assembly of two or more spatially split solar cell subassemblies, each of which includes a respective monolithic semiconductor body composed of a tandem stack of solar subcells, where the subassemblies are interconnected electrically to one another so that a series electrical circuit is formed between groups of one or more subcells in each subassembly. In some cases, relatively high band gap semiconductor materials can be used for the upper subcells. The solar cell assemblies can be particularly advantageous for applications in space.

公开(公告)号：US20170110606A1

公开(公告)日：2017-04-20

申请号：US14883300

申请日：2015-10-14

申请人： International Business Machines Corporation

发明人： Talia S. Gershon ,  Richard A. Haight ,  Marinus Hopstaken ,  Yun Seog Lee

IPC分类号： H01L31/032 ,  H01L31/065 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/0326 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02664 ,  H01L31/0392 ,  H01L31/065 ,  H01L31/072 ,  H01L31/1864 ,  H01L31/1892 ,  Y02E10/50

摘要： Techniques for achieving band gap grading in CZTS/Se absorber materials are provided. In one aspect, a method for creating band gap grading in a CZTS/Se absorber layer includes the steps of: providing a reservoir material containing Si or Ge; forming the CZTS/Se absorber layer on the reservoir material; and annealing the reservoir material and the CZTS/Se absorber layer under conditions sufficient to diffuse Si or Ge atoms from the reservoir material into the CZTS/Se absorber layer with a concentration gradient to create band gap grading in the CZTS/Se absorber layer. A photovoltaic device and method of forming the photovoltaic device are also provided.

公开(公告)号：US09496433B2

公开(公告)日：2016-11-15

申请号：US14436075

申请日：2013-10-10

申请人： ROHM CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

发明人： Takuji Maekawa ,  Shigeru Niki ,  Shogo Ishizuka ,  Hajime Shibata

IPC分类号： H01L31/0272 ,  H01L31/065 ,  C23C14/34 ,  H01L31/032 ,  H01L31/10 ,  H01L31/0224 ,  H01L31/0392 ,  H01L27/146 ,  H01L31/18

CPC分类号： H01L31/0322 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/14694 ,  H01L31/022466 ,  H01L31/03923 ,  H01L31/10 ,  H01L31/18 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.

摘要翻译： 本发明的光电转换装置包括基板，设置在基板上的下电极层，设置在下电极层上的覆盖下电极层的CIGS化合物半导体层和设置在化合物半导体层上的透明电极层，其中， 化合物半导体层的最大Ga含量变化量在层厚度方向上测定为5％以上，最大含量变化量在层厚度方向上测定为6％以上。

公开(公告)号：US09478699B2

公开(公告)日：2016-10-25

申请号：US13819006

申请日：2011-08-25

申请人： Roberto C. Myers ,  Siddharth Rajan

发明人： Roberto C. Myers ,  Siddharth Rajan

IPC分类号： H01L33/04 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02 ,  H01L29/06 ,  H01L29/12 ,  H01L29/15 ,  H01L29/205 ,  H01L29/66 ,  H01L29/775 ,  H01L29/861 ,  H01L31/0352 ,  H01L31/065 ,  H01L31/109 ,  H01L31/18 ,  H01L33/18 ,  H01L29/20 ,  H01L33/08 ,  H01L33/32 ,  B82Y20/00

CPC分类号： H01L33/04 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02636 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/122 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/861 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/065 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/08 ,  H01L33/18 ,  H01L33/32 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： A nanowire comprises a polar semiconductor material that is compositionally graded along the nanowire from a first end to a second end to define a polarization doping profile along the nanowire from the first end to the second end. The polar semiconductor material may comprise a group IH-nitride semiconductor, such as an alloy of GaN and AlN, or an alloy of GaN and InN. Such nanowires may be formed by nucleating the first ends on a substrate, growing the nanowires by depositing polar semiconductor material on the nucleated first ends on a selected growth face, and compositionally grading the nanowires during growth to impart the polarization doping. The direction of the compositional grading may be reversed during the growing of the nanowires to reverse the type of the imparted polarization doping. In some embodiments, the reversing forms n/p or p/n junctions in the nanowires.

摘要翻译： 纳米线包括从第一端到第二端在纳米线上组成分级的极性半导体材料，以限定沿着纳米线从第一端到第二端的偏振掺杂分布。 极性半导体材料可以包括诸如GaN和AlN的合金或GaN和InN的合金的III族氮化物半导体。 这样的纳米线可以通过在基底上成核第一端而形成，通过在选择的生长面上的有核的第一端上沉积极性半导体材料来生长纳米线，并且在生长期间组合地对纳米线进行分级以赋予偏振掺杂。 在纳米线的生长期间，组成分级的方向可以相反，以反转所赋予的偏振掺杂的类型。 在一些实施方案中，反转在纳米线中形成n / p或p / n结。