公开(公告)号：US07795125B2

公开(公告)日：2010-09-14

申请号：US12274904

申请日：2008-11-20

申请人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

发明人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07754524B2

公开(公告)日：2010-07-13

申请号：US11226027

申请日：2005-09-14

申请人： Robert S. Dubrow ,  Linda T. Romano ,  David P. Stumbo

发明人： Robert S. Dubrow ,  Linda T. Romano ,  David P. Stumbo

IPC分类号： H01L51/40

CPC分类号： H01L21/02422 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B7/00 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02656 ,  Y10S977/762 ,  Y10S977/827

摘要： Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

公开(公告)号：US07547908B2

公开(公告)日：2009-06-16

申请号：US11615834

申请日：2006-12-22

申请人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

发明人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L31/184

摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面 如在结构中生长。 一层中的应变量为|（ain-plane-abulk）| / abulk。 在一些实施方案中，发光层中的应变小于1％。

公开(公告)号：US07233041B2

公开(公告)日：2007-06-19

申请号：US11490637

申请日：2006-07-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  Parce J. Wallace ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US07105428B2

公开(公告)日：2006-09-12

申请号：US11117703

申请日：2005-04-29

申请人： Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay L. Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  Dave Stumbo

发明人： Yaoling Pan ,  Xiangfeng Duan ,  Robert S. Dubrow ,  Jay L. Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda T. Romano ,  Dave Stumbo

IPC分类号： H01L21/20 ,  H01L21/477 ,  H01L21/31 ,  H01L23/48 ,  H01L29/40 ,  B01J27/22 ,  H01L21/44

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7854 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/891 ,  H01L2924/00

摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

公开(公告)号：US07064372B2

公开(公告)日：2006-06-20

申请号：US11004380

申请日：2004-12-03

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L29/76

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US06947291B2

公开(公告)日：2005-09-20

申请号：US10154555

申请日：2002-05-23

申请人： Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

发明人： Christopher L. Chua ,  Francesco Lemmi ,  Koenraad F. Van Schuylenbergh ,  Jeng Ping Lu ,  David K. Fork ,  Eric Peeters ,  Decai Sun ,  Donald L. Smith ,  Linda T. Romano

IPC分类号： H01F41/04 ,  G01R1/067 ,  G01R3/00 ,  G03C5/00 ,  H01F17/00 ,  H01F17/02 ,  H01F27/29 ,  H01L21/02 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485 ,  H01L23/49 ,  H01L23/498 ,  H01L23/522 ,  H01R9/03 ,  H05K7/02

CPC分类号： H01L24/13 ,  G01R1/06727 ,  G01R3/00 ,  H01F17/0033 ,  H01F17/02 ,  H01F41/041 ,  H01L21/76838 ,  H01L21/7688 ,  H01L23/498 ,  H01L23/49811 ,  H01L23/5227 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L28/10 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/4847 ,  H01L2224/8592 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49147 ,  Y10T29/49204 ,  Y10T29/49208 ,  Y10T29/4921 ,  Y10T29/49218 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

公开(公告)号：US06875627B2

公开(公告)日：2005-04-05

申请号：US10025462

申请日：2001-12-26

申请人： David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

发明人： David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

IPC分类号： H01S5/227 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343 ,  H01L21/20

CPC分类号： H01S5/32341 ,  H01S5/2004 ,  H01S5/2275 ,  H01S2301/18 ,  H01S2304/00

摘要： An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

摘要翻译： 与传统的脊波导结构相比，索引引导掩埋异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。 短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。 与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

公开(公告)号：US06574256B1

公开(公告)日：2003-06-03

申请号：US09487409

申请日：2000-01-18

申请人： Daniel Hofstetter ,  Thomas L. Paoli ,  Linda T. Romano ,  Decai Sun ,  David P. Bour ,  Michael A. Kneissl ,  Chris G. Van de Walle ,  Noble M. Johnson

发明人： Daniel Hofstetter ,  Thomas L. Paoli ,  Linda T. Romano ,  Decai Sun ,  David P. Bour ,  Michael A. Kneissl ,  Chris G. Van de Walle ,  Noble M. Johnson

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/1228 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2304/12

摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.

摘要翻译： 分布式反馈结构包括基板材料。 有源层具有包括铝，镓，铟和氮中的至少一种的合金。 具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。 具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。 在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

公开(公告)号：US06389051B1

公开(公告)日：2002-05-14

申请号：US09343939

申请日：1999-06-30

申请人： Christian G. Van de Walle ,  David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

发明人： Christian G. Van de Walle ,  David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

IPC分类号： H01S520

CPC分类号： B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34333

摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.